To our customers,
Old Company Name in Catalogs and Other Documents
On April 1
st
, 2010, NEC Electronics Corporation merged with Renesas Technology
Corporation, and Renesas
Electronics Corporation
took over all the business of both
companies.
Therefore, although the old company name remains in this document, it is a valid
Renesas
Electronics document. We appreciate your understanding.
Renesas Electronics website: http://www.renesas.com
April 1
st
, 2010
Renesas Electronics Corporation
Issued by:
Renesas Electronics Corporation
(http://www.renesas.com)
Send any inquiries to http://www.renesas.com/inquiry.
Notice
1.
All information included in this document is current as of the date this document is issued. Such information, however, is
subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please
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“Standard”:
2.
3.
4.
5.
6.
7.
8.
9.
10.
11.
12.
(Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majority-
owned subsidiaries.
(Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics.
DATA SHEET
RECEIVER
NDL5590P Series
φ
50
µ
m InGaAs AVALANCHE PHOTO DIODE WITH
MULTIMODE FIBER INTERNAL PRE-AMPLIFIER
DESCRIPTION
NDL5590P Series is an InGaAs avalanche photo diode module with multimode fiber incorporating silicon pre-
amplifier IC. It is designed as an optical receiver for fiber optic communications systems such as SDH, SONET,
digital video transmission.
FEATURES
• Internal Si pre-amplifier IC
• High sensitivity
• Wide dynamic range
• Transimpedance
• Output impedance
• Detecting area size
• GI-50/125 multimode fiber pigtail
P =
−36
dBm TYP. @ 622 Mb/s. NRZ
D
r
= 28 dB TYP. @ 622 Mb/s. NRZ
300
Ω
50
Ω
φ
50
µ
m
NDL5590P
Optical Fiber:
GI-50/125
Length: 1 m MIN.
nt
in
ue
Optical Fiber:
GI-50/125
Length: 1 m MIN.
PACKAGE DIMENSIONS
in millimeters
NDL5590P1
d
NDL5590P2
Optical Fiber:
GI-50/125
Length: 1 m MIN.
Shrunk tube
Shrunk tube
Shrunk tube
30.0 MAX.
co
φ
6.0
+0.0
–0.1
12.5 MIN. 4.0±0.1
6.9±0.3
6.9±0.3
is
12.5 MIN.
3.9±0.5
φ
6.0
+0.0
–0.1
φ
6.0
+0.0
–0.1
φ
0.45
2–
φ
2.2
2.5±0.1
0.5±0.1
D
2–
φ
2.5
3
4
2
1
12.5 MIN.
30.0 MAX.
φ
2.0
12.0±0.1
16.0±0.2
φ
2.5
30.0 MAX.
φ
2.5
14.0±0.1
2
2
φ
2.0
φ
2.0
18.0±0.1
4
3
1
2
PIN CONNECTIONS
Pin No.
Function
Pin No.
Function
1
VPD (APD Cathode)
Signal Out
3
2
Case GND
V
CC
(5 V)
4
The information in this document is subject to change without notice.
Document No. P10267EJ2V0DS00 (2nd edition)
Date Published July 1996 P
Printed in Japan
The mark
•
shows major revised points.
4.0±0.3
3
1
3.0±0.3
7.0±0.3
1.5
6.0
+0.0
–0.1
4
3
4
1
7.0±0.15
Pr
od
uc
t
φ
2.5
©
1995
NDL5590P Series
•
ORDERING INFORMATION
Part Number
NDL5590P
NDL5590PC
NDL5590PD
NDL5590P1
NDL5590P1C
NDL5590P1D
NDL5590P2
NDL5590P2C
NDL5590P2D
Available Connector
Without Connector
With FC-PC Connector
With SC-PC Connector
Without Connector
With FC-PC Connector
Flat Mount Flange
Description
No Flange
Without Connector
With FC-PC Connector
With SC-PC Connector
Vertical Flange
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°
C, unless otherwise specified)
Parameter
Reverse Current
Supply Voltage
Operating Case Temperature
Storage Temperature
Lead SolderingTemperature (10 s)
Symbol
I
R
V
CC
T
C
T
stg
T
sld
Ratings
0.5
6.0
−40
to +85
−40
to +85
260
Unit
mA
V
2
D
is
co
nt
in
ue
d
Pr
od
uc
t
°C
°C
°C
With SC-PC Connector
NDL5590P Series
ELECTRO-OPTICAL CHARACTERISTICS (T
C
= 25
°
C)
Parameter
Reverse Breakdown Voltage
Temperature Coefficient of
Reverse Breakdown Voltage
Dark Current
Receiver Sensitivity
Dynamic range
Quantum Efficiency
I
D
P
D
r
V
R
= V
(BR) R
×
0.9
622 Mb/s, NRZ, PN 2
15
−
1
BER = 10
−11
, Mark: 1/2,
λ
= 1 310 nm
λ
= 1 310 nm, M = 1
λ
= 1 550 nm, M = 1
Responsivity
S
λ
= 1 310 nm, M = 1
λ
= 1 550 nm, M = 1
Cut-off Frequency
Equivalent Input Noise Current
Power Supply Voltage
Power Supply Current
Transimpedance
f
C
I
n
V
CC
I
CC
Z
t
V
CC
= 5 V
M = 3 to 15
f = 100 MHz
5.0
−36
28
30
nA
dBm
dB
%
Symbol
V
(BR)R
δ
*1
Conditions
I
D
= 100
µ
A
MIN.
50
TYP.
70
0.2
MAX.
100
Unit
V
%/°C
•
η
Pr
od
uc
t
76
65
90
77
0.80
0.94
0.81
1.0
0.96
9.0
5.0
23
V
30
300
Ω
Pin No.
Function
VPD (APD Cathode)
Case GND
Signal Out
V
CC
(5 V)
A/W
GHz
pA/√Hz
mA
•
*1
δ
=
∆
T
°C
y
V
(BR)R
(25
°C)
EQUIVALENT CIRCUIT AND PIN CONNECTIONS
V
PD
(+)
#1
V
CC
(+)
#4
I
CC
= 23 mA TYP. @ 5 V
nt
in
ue
3
#3
Signal Out
Case (GND)
#2
d
BOTTOM VIEW
4
1
1
2
3
4
V
(BR)R
(25
°C
+
∆
T
°C) −
V
(BR)R
(25
°C)
co
APD
Pre-AMP
2
P.C.D. =
φ
2 mm
D
is
3