Part Number: QBS-560
Broadband 32 Watt GaN Power Amplifier
700 to 2500 MHz high power, class AB design utilizing GaN technology
Features
o
32 Watts Typical Saturated Output Power
o
Rugged GaN Technology
o
Adaptive Biasing to Promote Efficiency
o
Optional Forward/Reverse Power Detection
*Similar Model
o
Microprocessor Based Control
Fault Monitoring
Temperature Compensation
Sequencing
Interface Options
o
Blanking Feature Available
API Technologies’ Model QBS-560 is a high power, class AB solid state amplifier which utilizes the latest GaN technology to offer
broadband performance from 700 to 2500 MHz. The RFPA has an integrated, high efficiency DC to DC converter to promote
operation over a wide DC input voltage range of +25 to +32 VDC; drawing 3.1 amps with a saturated gain of 37 dB, and a typical
output power of 32 watts.
The microprocessor based design incorporates an adaptive biasing algorithm to optimize efficiency and output power across the
frequency band under varying load conditions. This rugged, high reliability GaN based amplifier is capable of performing in
adverse commercial and military environments with EMI and moisture sealing, and will not be damaged operating into a 10:1
load mismatch at full rated power. Optional RF blanking controlled through an LVDS signal, and forward/reverse power
detection are available upon request.
Technical Specifications @ 25°C
(1)
Parameter
Frequency Range
Linear Gain
P
SAT
Gain
Output Power @ P
SAT
Power Flatness @ P
SAT
Power Over Temp. @ P
SAT
Input VSWR
Noise Figure
2
nd
Harmonic @ P
SAT
3
rd
Harmonic @ P
SAT
Spurious Signals
(non-harmonic)
DC Supply Voltage
Current Draw (Quiescent)
Current Draw @ P
SAT
Switching Time ON/OFF
(2)
Package Dimensions
Material
Finish
Weight (no heatsink)
RF Connectors
DC Interface Connector
Rev Date: 5/14/2014
© API Technologies Corp. Proprietary Information
|
www.apitech.com
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Maximum Ratings
Min / Max
800 - 2500 MHz
─
─
25 watts Min.
± 1.0 dB Max.
─
1.5 :1 Max.
7 dB Max.
─
─
─
+25 to +32 Volts
─
3.1 Amps
10 µs
Notes:
1. Specifications are based on measured
performance in a 50Ω system.
2. Switching time pertains to an optional
blanking function controlled by an LVDS
signal.
Storage Temperature
Operating Temperature (Case)
DC Input Voltage
RF Input Power
-45°C to +100°C
-20°C to +80°C
+32 VDC
+23 dBm
Typical
700 - 2500 MHz
44 dB
37 dB
32 watts
± 0.7 dB
± 1.0 dB
1.3 :1
6 dB
-18 dBc
-30 dBc
-60 dBc
+28 Volts
500 mA
3.1 Amps
5 µs
Protection
VSWR Tolerance
Case Shut Off Temperature
10 :1
+85°C
7.98(L) x 4.59(W) x 1.55(H) inches
6061-T6 Aluminum Alloy
Clear Iridite (MIL-DTL-5541F, Class 3)
2.5 lbs (1134 grams)
SMA Female (4-Hole Flange)
15 Pin D-Sub Plug
Page # 1
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