CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C896V8
Issued Date : 2014.05.05
Revised Date :
Page No. : 1/9
MTEF1P15V8
Features
•
Simple drive requirement
•
Low on-resistance
•
Fast switching speed
•
Pb-free lead plating and halogen-free package
BV
DSS
I
D
R
DSON(Typ)
-150V
-4A @ V
GS
=-10V, T
C
=25°C
0.64Ω @ V
GS
=-10V, I
D
=-1.4A
0.7Ω@ V
GS
=-6V, I
D
=-1A
Equivalent Circuit
MTEF1P15V8
Outline
DFN3×3
Pin 1
G：Gate S：Source D：Drain
Ordering Information
Device
MTEF1P15V8-0-T6-G
Package
DFN3×3
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTEF1P15V8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(T
C
=25°C, unless otherwise noted)
Parameter
Symbol
Spec. No. : C896V8
Issued Date : 2014.05.05
Revised Date :
Page No. : 2/9
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
C
=25°C, V
GS
=-10V
Continuous Drain Current @ T
C
=100°C, V
GS
=-10V
Continuous Drain Current @ T
A
=25°C, V
GS
=-10V
Continuous Drain Current @ T
A
=70°C, V
GS
=-10V
Pulsed Drain Current
T
C
=25℃
Continuous Source-Drain Diode Current
Avalanche Current
Avalanche Energy @ L=10mH, I
D
=-1.4A, R
G
=25Ω
T
C
=25℃
T
C
=70℃
Maximum Power Dissipation
T
A
=25℃
T
A
=70℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
Tj, Tstg
*3
*3
*1, 2
*3
*3
-150
±30
-4.0
-2.5
-1.1
-0.88
-16.0
-4
-1.4
9.8
42
27
2.1
1.3
-55~+150
V
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
Thermal Resistance, Junction-to-case
*3
Symbol
R
th,j-a
R
th,j-c
Typ
50
2.5
Maximum
60
3
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum pad of 2 oz. copper.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
ΔBV
DSS
/ΔT
J
ΔV
GS(th)
/
ΔT
J
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
G
FS
MTEF1P15V8
Min.
-150
-
-
-2
-
-
-
-
-
-
Typ.
-
-100
6
-3
-
-
-
0.64
0.7
2.5
Max.
-
-
-
-4
±
100
-1
-10
0.85
0.9
-
Unit
V
mV/
°
C
V
nA
μA
Ω
S
Test Conditions
V
GS
=0V, I
D
=-250μA
I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
GS
=
±
30V, V
DS
=0V
V
DS
=-120V, V
GS
=0V
V
DS
=-120V, V
GS
=0V, T
J
=55°C
V
GS
=-10V, I
D
=-1.4A
V
GS
=-6V, I
D
=-1A
V
DS
=-10V, I
D
=-1.4A
CYStek Product Specification
*1
*1
CYStech Electronics Corp.
Dynamic
Qg
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Ciss
Coss
Crss
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8.3
2.4
2.2
8
6
20
4
475
31
13
-
-
-0.78
60
120
Spec. No. : C896V8
Issued Date : 2014.05.05
Revised Date :
Page No. : 3/9
-
-
-
-
-
-
-
-
-
-4
-16
-1.2
-
-
nC
V
DS
=-75V, I
D
=-4A,V
GS
=-10V
ns
V
DS
=-75V, I
D
=-1A, V
GS
=-10V, R
G
=6
Ω
pF
V
DS
=-25V, V
GS
=0V, f=1MHz
A
V
ns
nC
T
C
=25
°
C
I
F
=-1A, V
GS
=0V
I
F
=-1A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
unit : mm
MTEF1P15V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
10
10V,9V,8V,7V,6V
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C896V8
Issued Date : 2014.05.05
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
0
4
8
-V
DS
, Drain-Source Voltage(V)
12
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
I
D
=-250
μ
A,
V
GS
=0V
-I
D
, Drain Current(A)
8
6
5V
4
2
-V
GS
=4V
0
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
Tj=25°C
2.0
R
DS(ON)
, Static Drain-Source On-State
Resistance(Ω)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.01
0.1
1
-I
D
, Drain Current(A)
10
V
GS
=
-10V
V
GS
=-4.5V
V
GS
=-6V
1
0.8
0.6
0.4
0.2
0
2
4
6
8
-I
DR
, Reverse Drain Current(A)
10
Tj=150°C
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
2
2.4
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(Ω)
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-1.4A
2
1.6
1.2
0.8
0.4
0
V
GS
=-10V, I
D
=-1.4A
R
DS(ON)
@Tj=25°C : 0.64Ω typ.
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTEF1P15V8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
1000
1.4
1.2
Spec. No. : C896V8
Issued Date : 2014.05.05
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
Ciss
Capacitance---(pF)
I
D
=-1mA
1
0.8
0.6
0.4
I
D
=-250μ
A
100
C
oss
Crss
10
0
10
20
30
40
-V
DS
, Drain-Source Voltage(V)
50
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Maximum Safe Operating Area
100
-V
GS
, Gate-Source Voltage(V)
10
-I
D
, Drain Current(A)
1
0.1
0.01
0.001
0.1
1
10
100
-V
DS
, Drain-Source Voltage(V)
1000
T
A
=25°C, Tj=150°, V
GS
=-10V
R
θJA
=135°C/W, Single Pulse
Gate Charge Characteristics
10
8
6
4
2
0
0
2
4
6
8
Qg, Total Gate Charge(nC)
10
V
DS
=-75V
I
D
=-4A
R
DS(ON)
Limited
100μs
1ms
10ms
100ms
1s
10s
DC
Forward Transfer Admittance vs Drain Current
10
1.5
Maximum Drain Current vs Junction Temperature
G
FS
, Forward Transfer Admittance(S)
-I
D
, Maximum Drain Current(A)
1.2
0.9
0.6
0.3
0
1
0.1
V
DS
=-10V
Pulsed
Ta=25°C
V
GS
=-10V, R
θ
JA
=60°C/W
0.01
0.001
0.01
0.1
1
-I
D
, Drain Current(A)
10
25
50
75
100
125
Tj, Junction Temperature(°C)
150
175
MTEF1P15V8
CYStek Product Specification
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