IRFL9014
MOSFET
l
l
l
l
l
l
l
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Repetitive Avalanche Rated
P-Channel
Fast Switching
Ease of Paralleling
D
V
DSS
= -60V
R
DS(on)
= 0.50Ω
G
I
D
= -1.8A
S
Description
The SOT-223 package is designed for surface-mount using
vapor phase, infra red, or wave soldering techniques. Its
unique package design allows for easy automatic pick-and-
place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of
grreater than 1.25W is possible in a typical surface mount
application.
S O T -2 2 3
Absolute Maximum Ratings
Parameter
I
D
@ Tc = 25°C
I
D
@ Tc = 100°C
I
DM
P
D
@Tc = 25°C
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ -10 V
Continuous Drain Current, V
GS
@ -10 V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldewring Temperature, for 10 seconds
Max.
-1.8
-1.1
-14
3.1
2.0
0.025
0.017
-/+20
140
-1.8
0.31
-4.5
-55 to + 150
300 (1.6mm from case)
Units
A
W
W/°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-PCB
Junction-to-Ambient. (PCB Mount)**
Typ.
–––
–––
Max.
40
60
Units
°C/W
2014-8-9
1
www.kersemi.com
IRFL9014
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-60
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– -0.059 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
-2.0
1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.50
––– -4.0
––– –––
––– -100
––– -500
––– -100
––– 100
––– 12
––– 3.8
––– 5.1
11 –––
63 –––
9.6 –––
31
–––
4.0
6.0
270
170
31
–––
–––
–––
–––
–––
pF
Ω
V
S
µA
nA
V
GS
= -10V, I
D
= 1.1A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= -25V, I
D
= 1.1A
V
DS
= -60V, V
GS
= 0V
V
DS
= -48V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
=-6.7A
V
DS
=-48V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -30V
I
D
= -6.7A
R
G
= 24
Ω
R
D
= 4.0
Ω,
See Fig. 10
Between lead, 6mm(0.25in)
from package and center
of die contact.
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
D
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
nC
ns
nH
G
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– -1.8
showing the
A
G
integral reverse
––– ––– -14
p-n junction diode.
––– ––– -5.5
V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
––– 80 160
ns
T
J
= 25°C, I
F
=-6.7A
––– 0.096 0.19
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
D
S
2014-8-9
2
www.kersemi.com
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
