AUIRF9Z34N
Features
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Advanced Planar Technology
P-Channel MOSFET
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified*
TO-220AB
AUIRF9Z34N
V
(BR)DSS
R
DS(on)
max.
I
D
-55V
0.10Ω
-19A
G
D
S
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T
A
) is 25°C, unless otherwise specified.
Parameter
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V
I
DM
Pulsed Drain Current
Max.
-19
-14
-68
68
0.45
± 20
180
-10
6.8
-5.0
-55 to + 175
300
10 lbf in (1.1N m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
c
P
D
@T
C
= 25°C Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Avalanche Current
Single Pulse Avalanche Energy (Thermally Limited)
c
d
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
c
e
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case )
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
R
θJC
R
θCS
R
θJA
Junction-to-Case
y
y
g
Parameter
Typ.
–––
0.50
–––
Max.
2.2
–––
62
Units
°C/W
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
2014-8-11
1
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AUIRF9Z34N
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
ΔV
(BR)DSS
/ΔT
J
R
DS(on)
V
GS(th)
gfs
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
-55
–––
–––
-2.0
4.2
–––
–––
–––
–––
–––
0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.10
-4.0
–––
-25
-250
100
-100
V
V/°C
Ω
V
S
μA
nA
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -10A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -25V, I
D
= -10A
V
DS
= -55V, V
GS
= 0V
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
f
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
13
55
30
41
4.5
7.5
620
280
140
35
79
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Conditions
I
D
= -10A
V
DS
= -44V
V
GS
= -10V, See Fig. 6 & 13
V
DD
= -28V
I
D
= -10A
R
G
= 13Ω
R
D
= 2.6Ω, See Fig. 10
Between lead,
f
ns
f
D
nH
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
G
S
pF
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
54
110
-19
A
-68
-1.6
82
160
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
D
Ã
S
p-n junction diode.
T
J
= 25°C, I
S
= -10A, V
GS
= 0V
T
J
= 25°C, I
F
= -10A
di/dt = 100A/μs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2014-8-11
2
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AUIRF9Z34N
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
TO-220
N/A
Class M3 (+/- 250V)
†††
AEC-Q101-002
Class H1B (+/- 800V)
†††
AEC-Q101-001
Class C5 (+/- 2000V)
†††
AEC-Q101-005
Yes
Moisture Sensitivity Level
Machine Model
Human Body Model
Charged Device
Model
RoHS Compliant
ESD
2014-8-11
3
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AUIRF9Z34N
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
10
10
-4.5V
20μs PULSE WIDTH
T
C
= 175°C
1
10
-4.5V
1
0.1
1
20μs PULSE WIDTH
Tc = 25°C
A
10
100
1
0.1
100
A
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= -17A
-I
D
, Drain-to-Source Current (A)
1.5
T
J
= 25°C
T
J
= 175°C
10
1.0
0.5
1
4
5
6
7
V
DS
= -25V
20μs PULSE WIDTH
8
9
10
A
0.0
-60 -40 -20
0
20
40
60
V
GS
= -10V
80 100 120 140 160 180
A
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
4
Fig 4.
Normalized On-Resistance
Vs. Temperature
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2014-8-11
AUIRF9Z34N
1200
-V
GS
, Gate-to-Source Voltage (V)
1000
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd
, C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
20
I
D
= -10A
V
DS
= -44V
V
DS
= -28V
16
C, Capacitance (pF)
800
C
iss
C
oss
12
600
8
400
C
rss
200
4
0
1
10
100
A
0
0
10
20
FOR TEST CIRCUIT
SEE FIGURE 13
30
40
A
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
100
10μs
T
J
= 175°C
T
J
= 25°C
1
100μs
10
1ms
0.1
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
= 0V
1.4
A
1.6
1
1
T
C
= 25°C
T
J
= 175°C
Single Pulse
10
10ms
100
A
-V
SD
, Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
2014-8-11
5
Fig 8.
Maximum Safe Operating Area
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