IRF5210
TO-220AB
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Power MOSFET
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
G
acceptance throughout the industry.
S
D
V
DSS
= -100V
R
DS(on)
= 0.06Ω
I
D
= -40A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-40
-29
-140
200
1.3
± 20
780
-21
20
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
2014-8-10
1
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IRF5210
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-100
–––
–––
-2.0
10
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
86
79
81
4.5
7.5
2700
790
450
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.06
Ω
V
GS
= -10V, I
D
= -24A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -50V, I
D
= -21A
-25
V
DS
= -100V, V
GS
= 0V
µA
-250
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
180
I
D
= -21A
25
nC V
DS
= -80V
97
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -50V
–––
I
D
= -21A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 2.4Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -40
showing the
A
G
integral reverse
––– ––– -140
p-n junction diode.
S
––– ––– -1.6
V
T
J
= 25°C, I
S
= -21A, V
GS
= 0V
––– 170 260
ns
T
J
= 25°C, I
F
= -21A
––– 1.2 1.8
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
V
DD
= -25V, starting T
J
= 25°C, L = 3.5mH
R
G
= 25Ω, I
AS
= -21A. (See Figure 12)
I
SD
≤
-21A, di/dt
≤
-480A/µs, V
DD
≤
V
(BR)DSS
,
Pulse width
≤
300µs; duty cycle
≤
2%.
T
J
≤
175°C
2014-8-10
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IRF5210
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOT TOM - 4.5V
TO P
1000
-ID , D rain-to-S ou rc e C urre nt (A )
-ID , D rain-to-S ource C urrent (A )
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
TOP
100
100
10
10
-4 .5V
4 0µ s P U LS E W ID T H
T
C
= 1 75 °C
0.1
1
10
1
0.1
1
-4.5 V
4 0µ s P U LS E W ID TH
T c = 2 5°C
A
10
100
1
A
100
-VD S , D rain-to-S ourc e V oltage (V )
-VD S , D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
3.0
R
D S (on )
, D rain-to-S ource O n R esistance
(N orm alized)
I
D
= -35 A
-I
D
, D rain-to-S ource C urrent (A)
2.5
100
T
J
= 2 5 °C
T
J
= 1 7 5 °C
2.0
1.5
10
1.0
0.5
1
4
5
6
7
V
D S
= -5 0 V
4 0 µ s P U L S E W ID T H
8
9
A
10
0.0
-60
-40
-20
0
20
40
60
80
V
G S
= -1 0V
100 120 140 160 180
A
-V
G S
, G a te -to -S o u rc e V o lta g e (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
2014-8-10
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IRF5210
6000
5000
-V
G S
, G ate-to-S ource V oltage (V )
C
iss
V
GS
C
iss
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1MHz
C
g s
+ C
g d
, C
d s
S H O R TE D
C
gd
C
ds
+ C
g d
20
I
D
= -2 1A
V
D S
= -80 V
V
D S
= -50 V
V
D S
= -20 V
16
C , Capacitance (pF)
4000
C
oss
3000
12
C
rss
2000
8
4
1000
0
1
10
100
A
0
0
40
80
FO R TE S T CIR C U IT
S E E FIG U R E 1 3
120
160
A
200
-V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, Total G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
S D
, R everse Drain C urrent (A )
O P E R A T IO N IN T H IS A R E A L IM ITE D
B Y R
D S (o n)
-I
D
, D rain C urrent (A )
100
100
10µ s
T
J
= 1 75 °C
T
J
= 2 5°C
10
100µs
10
1m s
1
0.4
0.8
1.2
1.6
V
G S
= 0V
2.0
A
1
1
T
C
= 25 °C
T
J
= 17 5°C
S ing le P u lse
10
10m s
A
100
1000
2.4
-V
S D
, S ourc e-to-D rain V oltage (V )
-V
D S
, D rain-to-S ourc e V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
2014-8-10
4
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IRF5210
V
DS
50
R
D
V
GS
R
G
40
D.U.T.
+
-I
D
, Drain Current (A)
-10V
30
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
20
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
10
V
GS
10%
0
25
50
75
100
125
150
175
90%
V
DS
T
C
, Case Temperature ( ° C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
1
Fig 10b.
Switching Time Waveforms
Thermal Response (Z
thJC
)
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-10
5
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-
V
DD
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