IRF4905
TO-220AB
l
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Power MOSFET
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
D
V
DSS
= -55V
G
S
R
DS(on)
= 0.02Ω
I
D
= -74A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Max.
-74
-52
-260
200
1.3
± 20
930
-38
20
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.75
–––
62
Units
°C/W
2014-8-10
1
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IRF4905
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
-2.0
21
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
-0.05
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
18
99
61
96
4.5
7.5
3400
1400
640
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= -250µA
––– V/°C Reference to 25°C, I
D
= -1mA
0.02
Ω
V
GS
= -10V, I
D
= -38A
-4.0
V
V
DS
= V
GS
, I
D
= -250µA
–––
S
V
DS
= -25V, I
D
= -38A
-25
V
DS
= -55V, V
GS
= 0V
µA
-250
V
DS
= -44V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 20V
nA
-100
V
GS
= -20V
180
I
D
= -38A
32
nC V
DS
= -44V
86
V
GS
= -10V, See Fig. 6 and 13
–––
V
DD
= -28V
–––
I
D
= -38A
ns
–––
R
G
= 2.5Ω
–––
R
D
= 0.72Ω, See Fig. 10
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
–––
V
GS
= 0V
–––
pF
V
DS
= -25V
–––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– -74
showing the
A
G
integral reverse
––– ––– -260
p-n junction diode.
S
––– ––– -1.6
V
T
J
= 25°C, I
S
= -38A, V
GS
= 0V
––– 89 130
ns
T
J
= 25°C, I
F
= -38A
––– 230 350
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-38A, di/dt
≤
-270A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Starting T
J
= 25°C, L = 1.3mH
R
G
= 25Ω, I
AS
= -38A. (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2%.
2014-8-10
2
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IRF4905
1000
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
1000
-ID , D ra in -to -S o u rce C u rre n t (A )
-ID , D ra in -to -S o u rc e C u rre n t (A )
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP
100
100
10
-4.5 V
10
-4.5 V
1
0.1
1
2 0µ s PU LS E W ID TH
T c = 2 5°C
A
10
100
1
0.1
1
20 µ s PU LSE W ID TH
T
C
= 1 75°C
10
100
A
-VD S , Drain-to-Source Voltage (V)
-VD S , Drain-to-Source V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
R
D S (o n )
, D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I
D
= -6 4A
-I
D
, D rain -to- S our ce C urr ent ( A )
T
J
= 2 5 °C
100
1.5
T
J
= 1 7 5 °C
1.0
10
0.5
1
4
5
6
7
V
DS
= -2 5 V
2 0 µ s P U L S E W ID T H
8
9
A
10
0.0
-60
-40 -20
0
20
40
60
80
V
G S
= -10 V
100 120 140 160 180
A
-V
G S
, Ga te-to-S o urce V oltage (V )
T
J
, Junction T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
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2014-8-10
IRF4905
7000
6000
-V
G S
, G a te -to -S o u rce V o lta g e (V )
V
GS
C
is s
C
rs s
C
o ss
= 0 V,
f = 1M H z
= C
gs
+ C
gd
, C
ds
SH O RTE D
= C
gd
= C
ds
+ C
g d
20
I
D
= -3 8A
V
DS
= - 44V
V
DS
= - 28V
16
C , C a p a c ita n c e (p F )
5000
C
is s
4000
12
C
o ss
3000
8
2000
C
rs s
4
1000
0
1
10
100
A
0
0
40
80
FOR TE ST C IR C U IT
SE E FIG U R E 1 3
120
160
A
200
-V
D S
, Drain-to-Source V oltage (V)
Q
G
, Total G ate C harge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
-I
S D
, R e ve rse D ra in C u rre n t (A )
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R
D S(o n)
100
-I
D
, D ra in C u rre n t (A )
100
100µ s
T
J
= 17 5°C
T
J
= 25 °C
10
1m s
10
10m s
1
0.4
0.6
0.8
1.0
1.2
1.4
V
G S
= 0 V
1.6
A
1
1
T
C
= 2 5°C
T
J
= 1 75°C
Sin gle Pu lse
10
100
1.8
A
-V
S D
, S ource-to-Drain V oltage (V )
-V
D S
, Drain-to-Source V oltage (V )
Fig 7.
Typical Source-Drain Diode
Forward Voltage
2014-8-10
4
Fig 8.
Maximum Safe Operating Area
www.kersemi.com
IRF4905
80
V
DS
V
GS
I D , Drain Current (A)
60
R
D
D.U.T.
+
-10V
40
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
20
t
d(on)
t
r
t
d(off)
t
f
V
GS
0
25
50
75
100
125
150
175
10%
TC , Case Temperature
( ° C)
90%
Fig 9.
Maximum Drain Current Vs.
Case Temperature
V
DS
Fig 10b.
Switching Time Waveforms
1
(Z
thJC
)
D = 0.50
0.20
Thermal Response
0.1
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-10
5
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-
R
G
V
DD
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