February 1996
NDS9952A
Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-channel enhancement mode power
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process is especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulses in the
avalanche and commutation modes. These devices are
particularly suited for low voltage applications such as
notebook computer power management and other
battery powered circuits where fast switching, low in-line
power loss, and resistance to transients are needed.
Features
N-Channel 3.7A, 30V, R
DS(ON)
=0.08
Ω
@ V
GS
=10V.
P-Channel -2.9A, -30V, R
DS(ON)
=0.13
Ω
@ V
GS
=-10V.
High density cell design or extremely low R
DS(ON)
.
High power and current handling capability in a widely used
surface mount package.
Dual (N & P-Channel) MOSFET in surface mount package.
________________________________________________________________________________
5
4
3
2
1
6
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
T
A
= 25°C unless otherwise noted
N-Channel
30
± 20
(Note 1a)
P-Channel
-30
± 20
± 2.9
± 10
2
Units
V
V
A
± 3.7
± 15
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
W
1.6
1
0.9
-55 to 150
°C
T
J
,T
STG
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
40
°C/W
°C/W
NDS9952A.SAM
© 1997 Fairchild Semiconductor Corporation
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
BV
DSS
I
DSS
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Conditions
V
GS
= 0 V, I
D
= 250 µA
V
GS
= 0 V, I
D
= -250 µA
V
DS
= 24 V, V
GS
= 0 V
T
J
= 55°C
V
DS
= -24 V, V
GS
= 0 V
T
J
= 55°C
I
GSSF
I
GSSR
V
GS(th)
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
V
DS
= V
GS
, I
D
= -250 µA
T
J
= 125°C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 1.0 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 0.5 A
T
J
= 125°C
V
GS
= -10 V, I
D
= -1.0 A
T
J
= 125°C
V
GS
= -4.5 V, I
D
= -0.5 A
T
J
= 125°C
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 5 V
V
GS
= -10 V, V
DS
= -5 V
V
DS
= 15 V, I
D
= 3.7 A
V
DS
= -15 V, I
D
= -2.9 A
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
N-Channel
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
P-Channel
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
320
350
225
260
85
100
pF
pF
pF
N-Ch
P-Ch
N-Ch
P-Ch
15
-10
6
4
S
P-Ch
N-Ch
P-Ch
All
All
N-Ch
1
0.7
-1
-0.85
1.7
1.2
-1.6
-1.25
0.06
0.08
0.08
0.11
0.11
0.15
0.17
0.24
P-Ch
Type
N-Ch
P-Ch
N-Ch
Min
30
-30
2
25
-2
-25
100
-100
2.8
2.2
-2.8
-2.5
0.08
0.13
0.11
0.18
0.13
0.21
0.2
0.32
A
Typ
Max
Units
V
V
µA
µA
µA
µA
nA
nA
V
OFF CHARACTERISTICS
ON CHARACTERISTICS
(Note 2)
Ω
NDS9952A.SAM
Electrical Characteristics
(T
A
= 25°C unless otherwise noted)
Symbol
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Parameter
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
N-Channel
V
DS
= 10 V,
I
D
= 3.7 A, V
GS
= 10 V
P-Channel
V
DS
= -10 V,
I
D
= -2.9 A, V
GS
= -10 V
Conditions
N-Channel
V
DD
= 10 V, I
D
= 1 A,
V
GEN
= 10 V, R
GEN
= 6
Ω
P-Channel
V
DD
= -10 V, I
D
= -1 A,
V
GEN
= -10 V, R
GEN
= 6
Ω
Type
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
t
rr
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
Min
Typ
10
9
13
21
21
21
5
8
9.5
10
1.5
1.6
3.3
3.4
Max
15
40
20
40
50
90
50
50
27
25
Units
ns
ns
ns
ns
nC
nC
nC
SWITCHING CHARACTERISTICS
(Note 2)
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
Reverse Recovery Time
V
GS
= 0 V, I
S
= 1.25 A
V
GS
= 0 V, I
S
= -1.25 A
N-Ch
P-Ch
(Note 2)
(Note 2)
1.2
-1.2
0.8
-0.8
1.3
-1.3
75
100
A
V
ns
N-Ch
P-Ch
N-Ch
P-Ch
V
GS
= 0 V, I
F
= 1.25 A, dI
F
/dt = 100 A/µs
V
GS
= 0 V, I
F
= -1.25 A, dI
F
/dt = 100 A/µs
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
a. 78
o
C/W when mounted on a 0.5 in
2
pad of 2oz cpper.
b. 125
o
C/W when mounted on a 0.02 in
2
pad of 2oz cpper.
c. 135 C/W when mounted on a 0.003 in pad of 2oz cpper.
o
2
1a
1b
1c
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
NDS9952A.SAM
Typical Electrical Characteristics: N-Channel
20
V
GS
=10V
8.0
3
6.0
DRAIN-SOURCE ON-RESISTANCE
, DRAIN-SOURCE CURRENT (A)
5.0
4.5
R
DS(on)
, NORMALIZED
15
V
GS
= 3.5V
2.5
4.0
2
10
4.0
4.5
1.5
5.0
6.0
8.0
10
3.5
5
1
3.0
0
0
1
2
V
DS
, DRAIN-SOURCE VOLTAGE (V)
3
I
D
0.5
0
3
6
9
I
D
, DRAIN CURRENT (A)
12
15
Figure 1. N-Channel On-Region Characteristics.
Figure 2. N-Channel On-Resistance Variation with
Gate Voltage and Drain Current.
1.6
2
DRAIN-SOURCE ON-RESISTANCE
1.4
R
DS(on)
, NORMALIZED
R
DS(ON)
, NORMALIZED
V
G S
= 10V
DRAIN-SOURCE ON-RESISTANCE
I
D
= 3.7A
V
GS
= 10 V
1.5
1.2
TJ = 125°C
1
25°C
1
0.8
-55°C
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.5
0
3
6
9
I D , DRAIN CURRENT (A)
12
15
Figure 3. N-Channel On-Resistance Variation with
Temperature.
Figure 4. N-Channel On-Resistance Variation with
Drain Current and Temperature.
10
GATE-SOURCE THRESHOLD VOLTAGE
1.2
V
DS
= 10V
8
I
D
, DRAIN CURRENT (A)
TJ = -55°C
125°C
25°C
1.1
V
DS
= V
GS
I
D
= 250µA
V
th
, NORMALIZED
1
6
0.9
4
0.8
2
0.7
0
1
2
3
4
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
Figure 5. N-Channel Transfer
Characteristics.
Figure 6. N-Channel Gate Threshold Variation
with Temperature.
NDS9952A.SAM
Typical Electrical Characteristics: N-Channel
(continued)
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
I
D
= 250µA
10
5
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
BV
DSS
, NORMALIZED
1.08
1
0.5
TJ = 125°C
1.04
25°C
-55°C
0.1
1
0.96
0.01
0.92
-50
-25
0
25
50
75
100
T
J
, JUNCTION TEMPERATURE (°C)
125
150
0.001
0.2
0.4
0.6
0.8
1
1.2
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. N-Channel Breakdown Voltage Variation
with Temperature.
Figure 8. N-Channel Body Diode Forward Voltage
Variation with Current and Temperature
.
1000
800
10
I
D
= 3.7A
V
GS
, GATE-SOURCE VOLTAGE (V)
8
V
DS
= 10V
20V
500
CAPACITANCE (pF)
C iss
300
200
15V
6
C oss
4
100
f = 1 MHz
V
GS
= 0V
C rss
30
2
50
0.1
0.2
0.5
1
2
5
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
0
2
4
6
8
Q
g
, GATE CHARGE (nC)
10
12
Figure 9. N-Channel Capacitance Characteristics.
Figure 10. N-Channel Gate Charge Characteristics.
10
, TRANSCONDUCTANCE (SIEMENS)
V
DS
=10V
8
T J = -55°C
25°C
125°C
6
4
2
g
0
0
FS
2
4
6
I
D
, DRAIN CURRENT (A)
8
10
Figure 11. N-Channel Transconductance Variation
with Drain Current and Temperature.
NDS9952A.SAM
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