2N7002KDW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
FEATURES
• R
DS(ON)
, V
GS
@10V,I
DS
@500mA=3Ω
• R
DS(ON)
, V
GS
@4.5V,I
DS
@200mA=4Ω
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Very Low Leakage Current In Off Condition
• Specially Designed for Battery Operated Systems, Solid-State Relays
Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.
• ESD Protected 2KV HBM
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.054(1.35)
0.045(1.15)
0.030(0.75)
0.021(0.55)
0.056(1.40)
0.047(1.20)
SOT-363
Unit
：
inch(mm)
0.087(2.20)
0.074(1.90)
0.010(0.25)
MECHANICALDATA
• Case: SOT-363 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Approx. Weight: 0.0002 ounces, 0.006 grams
• Marking : K27
6
5
4
0.012(0.30)
0.005(0.15)
0.040(1.00)
0.031(0.80)
0.010(0.25)
0.003(0.08)
0.044(1.10)
MAX.
1
2
0.087(2.20)
0.078(2.00)
0.018(0.45)
0.006(0.15)
3
Maximum RATINGS and Thermal Characteristics (T
A
=25
O
C unless otherwise noted )
PA RA M E TE R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D r a i n C ur r e nt
P uls e d D r a i n C ur r e nt
1)
S ym b o l
V
DS
V
GS
I
D
I
D M
T
A
= 2 5
O
C
T
A
= 7 5
O
C
P
D
T
J
,T
S TG
R
θJ
A
Li mi t
60
+20
11 5
800
200
120
- 5 5 to + 1 5 0
625
Uni ts
V
V
mA
mA
mW
O
M a xi m um P o we r D i s s i p a ti o n
Op e r a ti ng J unc ti o n a nd S to r a g e
Te mp e r a tur e Ra ng e
Junction-to Ambient Thermal
Resistance(PCB mounted)
2
C
O
C /W
Note: 1. Maximum DC current limited by the package
2. Surface mounted on FR4 board, t < 5 sec
PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE
May 21.2010-REV.01
PAGE . 1
2N7002KDW
ELECTRICALCHARACTERISTICS
P a ra m e te r
S ta ti c
D ra i n-S o ur c e B re a k d o wn
Vo lta g e
G a te Thre s ho ld Vo lta g e
D ra i n-S o ur c e On-S ta te
Re s i s ta nc e
D ra i n-S o ur c e On-S ta te
Re s i s ta nc e
Ze r o Ga te Vo lta g e D ra i n
C ur re nt
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha r g e
Tur n- On D e la y Ti m e
Tur n- Off D e la y Ti me
Inp ut C a p a c i ta nc e
O utp ut C a p a c i ta nc e
Re ve r s e Tra ns fe r
C a p a c i ta nc e
S o urc e - D r a i n D i o d e
D i o d e F o rwa r d Vo lta g e
C o nti nuo us D i o d e F o r wa rd
C ur re nt
P uls e d D i o d e F o r wa rd
C ur re nt
V
SD
I
s
I
s M
I
S
= 2 0 0 m A , V
GS
=0 V
-
-
-
-
-
0 .8 2
-
-
1 .3
11 5
800
V
mA
mA
Q
g
t
on
t
o ff
C
iss
C
oss
C
rss
V
D S
= 2 5 V, V
GS
=0 V
f=1 .0 M H
Z
V
D S
= 1 5 V, I
D
=2 0 0 mA
V
GS
=4.5V
V
DD
=30V , R
L
=150Ω
I
D
=200mA , V
GEN
=10V
R
G
=10Ω
-
-
-
-
-
-
-
-
-
-
-
-
0 .8
20
40
35
10
5
pF
nC
B V
DSS
V
GS ( t h)
R
D S ( o n)
R
D S ( o n)
I
D S S
I
GS S
g
fS
V
GS
= 0 V, I
D
=1 0 uA
V
D S
= V
GS
, I
D
= 2 5 0 uA
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
V
DS
=60V, V
GS
=0V
V
GS
= +2 0 V, V
D S
=0 V
V
D S
= 1 5 V, I
D
=2 5 0 mA
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
2 .5
4 .0
3.0
1
+1 0
-
uA
uA
mS
V
V
S ym b o l
Te s t C o nd i ti o n
M i n.
Typ .
M a x.
Uni ts
Ω
ns
Switching
Test Circuit
V
IN
V
DD
R
L
V
OUT
Gate Charge
Test Circuit
V
GS
V
DD
R
L
R
G
1mA
R
G
May 21.2010-REV.01
PAGE . 2
2N7002KDW
Typical Characteristics Curves (T
A
=25 C,unless otherwise noted)
O
I
D
- Drain-to-Source Current (A)
V
GS
= 6.0~10V
V
GS
= 10V ~ 6.0V
1
5.0V
5.0V
I
D
- Drain Source Current (A)
1.2
1.2
1
0.8
0.6
0.4
0.2
0
0
V
DS
=10V
0.8
0.6
0.4
4.0V
4.0V
3.0V
3.0V
0
0
1
2
3
4
5
T
J
=25
℃
0.2
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output Characteristic
FIG.2- Transfer Characteristic
5
5
R
DS(ON)
- On-Resistance (
W
)
R
DS(ON)
- On-Resistance (
W
)
4
3
V
GS
= 4.5V
2
1
0
V
GS
V
GS
=10V
=10V
4
3
I
D
=500m A
I
I
D
=200mA
D
=200m A
2
1
0
0
0.2
0.4
0.6
0.8
1
2
3
4
5
6
7
8
9
10
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
FIG.3- On Resistance vs Drain Current
FIG.4- On Resistance vs Gate to Source Voltage
R
DS(ON)
- On-Resistance(Normalized)
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
V
GS
=10V
I
D
=500mA
-25
0
25
50
75
100
o
125
150
T
J
- Junction Temperature ( C)
FIG.5- On Resistance vs Junction Temperature
May 21.2010-REV.01
PAGE . 3
2N7002KDW
Vgs
Qg
V
GS
- Gate-to-Source Voltage (V)
10
8
6
4
2
0
V
DS
=10V
I
D
=250mA
Vgs(th)
Qg(th)
Qgs
Qsw
0
0.2
0.4
0.6
0.8
1
Qgd
Qg
Q
g
- Gate Charge (nC)
Fig.6 - Gate Charge Waveform
V
th
- G-S Threshold Voltage (NORMALIZED)
Fig.7 - Gate Charge
88
86
84
82
80
78
76
74
72
-50
I
D
=250mA
BV
DSS
- Breakdown Voltage (V)
150
1.2
1.1
1
0.9
0.8
0.7
-50
ID = 250uA
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
150
T
J
- Junction Temperature (
o
C)
T
J
- Junction Temperature (
o
C)
Fig.8 - Threshold Voltage vs Temperature
Fig.9 - Breakdown Voltage vs Junction Temperature
10
V
GS
=0V
I
S
- Source Current (A)
1
0.1
T
J
=125
℃
25
℃
-55
℃
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
V
SD
- Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
May 21.2010-REV.01
PAGE . 4
2N7002KDW
MOUNTING PAD LAYOUT
SOT-363
Unit
：
inch(mm)
0.018
(0.45)
0.020
(0.50)
0.026
(0.65)
0.026
(0.65)
ORDER INFORMATION
• Packing information
T/R - 10K per 13" plastic Reel
T/R - 3K per 7” plastic Reel
LEGAL STATEMENT
Copyright PanJit International, Inc 2012
The information presented in this document is believed to be accurate and reliable. The specifications and information herein are
subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its produ cts for
any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any
license under its patent rights or rights of others.
May 21.2010-REV.01
0.075
(1.90)
PAGE .
5
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