Schottky Barrier Diode
RB168L-40
lApplication
General rectification
lDimensions
(Unit : mm)
2.6±0.15
Data
Sheet
lLand
Size Figure
(Unit : mm)
2.0
2.0
1.2±0.3
lFeatures
1) Small power mold type
(PMDS)
2) High reliability
3) Super low I
R
1.5±0.2
2.0±0.2
4.5±0.2
0.1±0.02
1
2
5.0±0.3
PMDS
lStructure
Cathode
ROHM : PMDS
JEDEC : SOD-106
1
2
: Manufacture Date
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
Anode
f1.550.05
φ
1.55±0.05
1.75±0.1
0.3
5.5±0.05
f1.55
φ
1.55
2.9±0.1
4.0±0.1
2.8MAX
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
5.3±0.1
0.05
9.5±0.1
Limits
40
40
1
30
150
-55
to
+150
12±0.2
4.2
Unit
V
V
A
A
°C
°C
resistive load, T
c
=125ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at T
a
=25ºC
Operating junction temperature
Storage temperature
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Conditions
I
F
=1.0A
V
R
=40V
Min.
-
-
Typ. Max. Unit
-
-
0.65
0.55
V
mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A
RB168L-40
lElectrical
Characteristic Curves
Data Sheet
10
T
j
= 150°C
T
j
= 125°C
1
T
j
= 75°C
0.1
T
j
= 25°C
1000
REVERSE CURRENT : I
R
(mA)
FORWARD CURRENT : I
F
(A)
100
10
1
0.1
0.01
0.001
0.0001
T
j
= 150°C
T
j
= 125°C
T
j
= 75°C
0.01
T
j
=
-25°C
T
j
= 25°C
T
j
=
-25°C
0.001
0 100 200 300 400 500 600 700 800 900 1000
0
10
20
30
40
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
640
FORWARD VOLTAGE : V
F
(mV)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
T
j
= 25°C
f = 1MHz
630
620
610
600
Ave. : 576.8mV
590
580
570
560
T
j
=25°C
I
F
=1.0A
n=30pcs
100
10
0
5
10
15
20
25
30
REVERSE VOLTAGE : V
R
(V)
V
R
-C
t
CHARACTERISTICS
V
F
DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
2015.01 - Rev.A
RB168L-40
lElectrical
Characteristic Curves
Data Sheet
200
180
381
T
j
=25°C
V
R
=40V
n=30pcs
361
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(nA)
160
140
120
100
80
60
40
20
0
Ave. : 43.5nA
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
341
321
301
281
261
241
221
201
Ave. : 242pF
I
R
DISPERSION MAP
C
t
DISPERSION MAP
400
40
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
350
I
FSM
1cyc
8.3ms
T
a
=25°C
35
30
25
20
15
10
5
0
Ave. : 7.9ns
300
250
200
Ave. : 118A
150
100
50
0
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A
RB168L-40
lElectrical
Characteristic Curves
Data Sheet
1000
3
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
R
th(j-a)
100
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
2
DC
D = 1/2
10
R
th(j-c)
Glass epoxy board mounted
IM=100mA
I
F
=1.0A
1
Sin(θ=180)
1
time
1ms 300ms
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
3
30
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
No destruction at 30kV
25
20
15
10
5
0
2
DC
D = 1/2
1
Sin(θ=180)
AVE. : 6.1kV
0
0
25
50
75
100
125
150
C=200pF
R=0W
C=100pF
R=1.5kW
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
