Schottky Barrier Diode
RB160MM-40
lApplication
General rectification
lDimensions
(Unit : mm)
1.6±0.1
0.1±0.1
0.05
Data
Sheet
lLand
Size Figure
(Unit : mm)
1.2
0.85
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Low V
F
0.9±0.1
3.5±0.2
0.12
2.6±0.1
PMDU
lStructure
0.8±0.1
Cathode
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
lConstruction
Silicon epitaxial planar type
lTaping
Dimensions
(Unit : mm)
4.0±0.1
2.0±0.05
φ
1.55±0.05
f1.550.05
1.75±0.1
Anode
0.25±0.05
3.5±0.05
8.0±0.2
1.81±0.1
4.0±0.1
φ
1.0±0.1
f1.00.1
3.71±0.1
1.5MAX
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct Reverse Voltage
60Hz half sin Wave
60Hz half sin wave ,Non-repetitive at T
a
=25°C
Limits
40
40
1
30
150
-40
to
+150
3.05
Unit
V
V
A
A
°C
°C
Operating Junction Temperature
Storage Temperature
-
-
lElectrical
Characteristics
(T
j
= 25°C)
Parameter
Forward Voltage
Reverse Current
Symbol
V
F1
I
R
Conditions
I
F
=1.0A
V
R
=40V
Min.
-
-
Typ. Max. Unit
0.46 0.51
4.0
30
V
mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.08 - Rev.B
RB160MM-40
lElectrical
Characteristic Curves
Data Sheet
40
310
T
j
=25°C
V
R
=40V
n=30pcs
305
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(mA)
35
30
25
20
15
10
5
0
AVE. : 2.9mA
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
300
295
290
285
280
275
270
AVE. : 280pF
I
R
DISPERSION MAP
C
t
DISPERSION MAP
400
35
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
350
I
FSM
1cyc
8.3ms
T
a
=25°C
30
25
20
15
10
5
0
AVE. : 10.4ns
300
250
200
150
100
50
0
AVE. : 83A
T
j
=25°C
I
F
=0.5A
I
R
=1A
I
rr
/ I
R
=0.25
n=10pcs
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.08 - Rev.B
RB160MM-40
lElectrical
Characteristic Curves
Data Sheet
1000
4
R
th(j-a)
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
100
3
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
R
th(j-c)
10
Mounted on glass epoxy board
IM=100mA
I
F
=1A
2
DC
D = 1/2
1
time
1ms 300ms
1
Sin(θ=180)
0
0.1
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
4
30
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
I
O
0A
0V
No destruction at 30kV
25
20
15
AVE. : 7.3kV
10
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
3
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
2
DC
D = 1/2
1
Sin(θ=180)
0
0
25
50
75
100
125
150
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.08 - Rev.B
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
