Schottky Barrier Diode
RB088NS100
lApplication
Switching power supply
lDimensions
(Unit : mm)
(2)
2.5
9.9
2.5
3.5
Data
Sheet
lLand
Size Figure
(Unit : mm)
11
lFeatures
1) Cathode common type
2) High reliability
3) Super low I
R
1
(1)
(3)
2.54
2.54
LPDS
lStructure
lConstruction
Silicon epitaxial planar type
1
ROHM : LPDS
JEITA : TO263S
: Manufacture Date
(2) Cathode
(1) Anode
(3) Anode
lTaping
Dimensions
(Unit : mm)
lAbsolute
Maximum Ratings
(T
c
= 25°C)
Parameter
Repetitive peak reverse voltage
Reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Conditions
Duty≦0.5
Direct reverse voltage
Glass epoxy board mounted, 60Hz half sin wave,
Limits
110
100
10
100
150
-55
to
+150
16
RB088
NS100
8.5
Unit
V
V
A
A
°C
°C
resistive load, I
O
/2 per diode, T
c
=137ºC Max.
60Hz half sin wave, Non-repetitive at
T
a
=25ºC, 1cycle, per diode
Operating junction temperature
Storage temperature
-
-
lElectrical
and Thermal Characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Thermal resistance
Symbol
V
F
I
R
R
th(j-c)
Conditions
I
F
=5A
V
R
=100V
Junction to case
Min.
-
-
-
Typ. Max. Unit
-
-
-
0.87
5
2
V
mA
°C / W
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© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.01 - Rev.A
RB088NS100
lElectrical
Characteristic Curves
Data Sheet
500
450
680
T
j
=25°C
V
R
=100V
n=30pcs
T
j
=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(nA)
400
350
300
250
200
150
100
50
Ave. : 151nA
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
670
660
Ave. : 650pF
650
640
I
R
DISPERSION MAP
C
t
DISPERSION MAP
500
40
REVERSE RECOVERY TIME : t
rr
(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
450
I
FSM
1cyc
8.3ms
T
a
=25°C
35
30
25
20
15
10
5
0
Ave. : 11.8ns
400
350
300
250
200
150
100
50
Ave. : 231A
T
j
=25°C
I
F
=0.5A
I
R
=1.0A
I
rr
/ I
R
=0.25
n=10pcs
I
FSM
DISPERSION MAP
t
rr
DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
3/5
2015.01 - Rev.A
RB088NS100
lElectrical
Characteristic Curves
Data Sheet
10
30
TRANSIENT
THERMAL IMPEDANCE : R
th
(°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
R
th(j-a)
25
20
15
10
5
0
Sin(θ=180)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
DC
R
th(j-c)
1
Glass epoxy board mounted
IM=100mA
I
F
=5A
D = 1/2
time
1ms 300ms
0.1
0.001
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t(s)
R
th
-t CHARACTERISTICS
AMBIENT TEMPERATURE : T
a
(°C)
DERATING CURVE (I
o
-T
a
)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Sin(θ=180)
30
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : I
o
(A)
I
O
0A
0V
V
R
t
T
D=t/T
V
R
=V
RM
/2
T
j
=150°C
25
20
15
10
AVE. : 3.9kV
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
AVE. : 10.9kV
DC
D = 1/2
CASE TEMPERATURE : T
c
(°C)
DERATING CURVE (I
o
-T
c
)
ESD DISPERSION MAP
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© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.01 - Rev.A
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