Schottky Barrier Diode
RB085BM-30
lApplication
General Rectification
lDimensions
(Unit : mm)
Data
Sheet
lLand
size figure
(Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) Cathode common dual type
TO-252
1
2.3
2.3
3) High reliability
4) Low V
F
ROHM : TO-252
JEITA : SC-63
1
: Manufacture Date
lStructure
(2)
Cathode
lConstruction
Silicon epitaxial planar type
lTaping
specifications
(Unit : mm)
(1)
Anode
3.0
(3)
Anode
lAbsolute
maximum ratings
(T
c
= 25°C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Limits
35
30
10
50
150
-40
to
+150
Unit
V
V
A
A
°C
°C
Duty≦0.5
Conditions
Direct Reverse Voltage
60Hz half sin Wave resistive load,
T
c
=102°C max., 1/2 Io per diode
60Hz half sin wave,
Non-repetitive at T
a
=25ºC, per diode
Operating Junction Temperature
Storage Temperature
lElectrical
characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Thermal Resistance
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
-
-
Symbol Min. Typ. Max.
V
F
I
R
R
th(j-c)
-
-
-
-
-
-
0.48
0.3
Unit
V
mA
I
F
=4.0A
Conditions
V
R
=30V
6.0 °C / W Junction to Case
1/5
2014.10 - Rev.A
2.0
1.6
1.6
6.0
RB085BM-30
lElectrical
characteristic curves
Data Sheet
120
110
AVE : 47.6nA
1800
Tj=25°C
Tj=25°C
V
R
=30V
V
R
=00V
n=30pcs
n=30pcs
Tj=25°C
Tj=25°C
f=1MHz
f=1MHz
V =0V
V
RR
=0V
n=10pcs
n=10pcs
REVERSE CURRENT : I
R
(mA)
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
100
90
80
70
60
1750
AVE : 000pF
1700
1650
AVE : 41.5mA
50
40
30
20
AVE : 1617pF
1600
1550
I
R
DISPERSION MAP
C
t
DISPERSION MAP
300
REVERSE RECOVERY TIME : trr(ns)
45
40
35
30
25
20
15
10
5
0
AVE : 19.3ns
AVE : 00ns
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
250
200
150
100
50
0
I
FSM
8.3ms
1cyc.
Tj=25°C
Tj=25°C
I
F
=0.1A
I
F
=0.5A
I
R
=0.1A
I
R
=1A
Irr /
Irr / I
R
=0.25
I
R
=0.1*I
R
n=10pcs
n=10pcs
AVE : 130A
I
FSM
DISPERSION MAP
trr DISPERSION MAP
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© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.10 - Rev.A
RB085BM-30
lElectrical
characteristic curves
Data Sheet
100
30
Rth(j-a)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0A
0V
t
Io
10
Rth(j-c)
20
DC
D = 1/2
10
T
V
R
D=t/T
V
R
=V
RM
/2
Tj=150°C
Mounted on glass epoxy board
1
IM=100mA
I
F
=1A
time
1ms 300ms
Sin(θ=180)
0
0
25
50
75
100
125
150
0.1
0.001
0.01
0.1
1
10
100
1000
TIME : t(s)
Rth-t CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
0A
0V
t
Io
30
T
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
V
R
D=t/T
V
R
=V
RM
/2
Tj=150°C
30
No Break at 30kV
25
20
15
10
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
No Break at 30kV
20
DC
D = 1/2
10
Sin(θ=180)
0
0
25
50
75
100
125
150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.10 - Rev.A
stm32/stm8
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