Schottky Barrier Diode
RB075BM40S
lApplication
General Rectification
lDimensions
(Unit : mm)
Data
Sheet
lLand
size figure
(Unit : mm)
6.0
lFeatures
1) Power mold type (TO-252)
2) High reliability
TO-252
1
2.3
2.3
3) Low V
F
lStructure
ROHM : TO-252
JEITA : SC-63
1
: Manufacture Date
(2)
Cathode
lConstruction
Silicon epitaxial planar type
lTaping
specifications
(Unit : mm)
(1)
Open
3.0
(3)
Anode
lAbsolute
maximum ratings
(T
c
= 25°C)
Parameter
Repetitive Peak Reverse Voltage
Reverse Voltage
Average forward rectified current
Non-repetitive Forward Current Surge Peak
Symbol
V
RM
V
R
I
o
I
FSM
T
j
T
stg
Limits
40
40
5
50
150
-40
to
+150
Unit
V
V
A
A
°C
°C
Duty≦0.5
Conditions
Direct Reverse Voltage
60Hz half sin Wave resistive load,
T
c
=125°C max.
60Hz half sin wave,
Non-repetitive at T
a
=25ºC
Operating Junction Temperature
Storage Temperature
lElectrical
characteristics
(T
j
= 25°C)
Parameter
Forward voltage
Reverse current
Thermal Resistance
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
-
-
Symbol Min. Typ. Max.
V
F
I
R
R
th(j-c)
-
-
-
-
-
-
0.75
5
Unit
V
mA
I
F
=5.0A
Conditions
V
R
=40V
6.0 °C / W Junction to Case
1/5
2014.10 - Rev.A
2.0
1.6
1.6
6.0
RB075BM40S
lElectrical
Characteristic Curves
Data Sheet
10
1000
Tj = 150°C
REVERSE CURRENT : I
R
(mA)
FORWARD CURRENT : I
F
(A)
Tj = 75°C
Tj = 125°C
100
10
1
Tj = 75°C
0.1
0.01
0.001
Tj =
-25°C
Tj = 125°C
1
Tj = 150°C
0.1
Tj = 25°C
Tj = 25°C
Tj =
-25°C
0.01
0
100 200 300 400 500 600 700 800
0.0001
0
10
20
30
40
FORWARD VOLTAGE : V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-I
R
CHARACTERISTICS
1000
f = 1MHz
720
FORWARD VOLTAGE : V
F
(mV)
710
700
690
680
670
660
650
640
AVE : 669mV
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
Tj=25°C
I
F
=5A
n=30pcs
100
10
0
10
20
30
REVERSE VOLTAGE : V
R
(V)
V
R
-C
t
CHARACTERISTICS
V
F
DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
2/5
2014.10 - Rev.A
RB075BM40S
lElectrical
Characteristic Curves
Data Sheet
150
140
620
Tj=25°C
V
R
=40V
n=30pcs
AVE : 98.8nA
Tj=25°C
f=1MHz
V
R
=0V
n=10pcs
REVERSE CURRENT : I
R
(nA)
130
120
110
100
90
80
70
60
50
CAPACITANCE BETWEEN
TERMINALS : C
t
(pF)
610
600
AVE : 586.8pF
590
580
570
I
R
DISPERSION MAP
C
t
DISPERSION MAP
300
50
REVERSE RECOVERY TIME : trr(ns)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
250
200
150
45
40
35
30
25
20
15
10
AVE : 15.2ns
I
FSM
8.3ms
1cyc.
Tj=25°C
I
F
=0.5A
I
R
=1A
Irr / I
R
=0.25
n=10pcs
AVE : 100A
100
50
0
I
FSM
DISPERSION MAP
trr DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
3/5
2014.10 - Rev.A
RB075BM40S
lElectrical
Characteristic Curves
Data Sheet
1000
1000
8.3ms
8.3ms
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
PEAK SURGE
FORWARD CURRENT : I
FSM
(A)
I
FSM
I
FSM
time
1cyc.
1cyc.
100
100
10
1
10
100
10
1
10
100
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
TIME : t(ms)
I
FSM
-t CHARACTERISTICS
10
0.05
FORWARD POWER
DISPERSION : P
F
(W)
0.04
D = 1/2
5
Sin(θ=180)
DC
REVERSE POWER
DISPERSION : P
R
(W)
0.03
DC
D = 1/2
Sin(θ=180)
0.02
0.01
0
0
5
10
0.00
0
10
20
30
40
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
I
O
-P
F
CHARACTERISTICS
REVERSE VOLTAGE : V
R
(V)
V
R
-P
R
CHARACTERISTICS
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
4/5
2014.10 - Rev.A
RB075BM40S
lElectrical
Characteristic Curves
Data Sheet
100
15
Rth(j-a)
TRANSIENT
THERMAL IMPEDANCE : Rth (°C/W)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0A
0V
t
Io
10
Rth(j-c)
10
DC
D = 1/2
5
Sin(θ=180)
T
V
R
D=t/T
V
R
=V
RM
/2
Tj=150°C
Mounted on glass epoxy board
1
IM=100mA
I
F
=5A
time
1ms 300ms
0.1
0.001
0
0.01
0.1
1
10
100
1000
0
25
50
75
100
125
150
TIME : t(s)
Rth-t CHARACTERISTICS
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
15
0A
Io
30
No Break at 30kV
ELECTROSTATIC
DISCHARGE TEST : ESD(kV)
AVERAGE RECTIFIED
FORWARD CURRENT : Io(A)
0V
t
D=t/T
V
R
=V
RM
/2
Tj=150°C
V
R
25
20
15
10
5
0
AVE : 27.8kV
10
DC
T
D = 1/2
5
Sin(θ=180)
0
0
25
50
75
100
125
150
C=200pF
R=0W
C=100pF
R=1.5kW
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.10 - Rev.A
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