SMP30 Series
Preliminary
Vishay Semiconductors
formerly General Semiconductor
Bidirectional Surface Mount T
HY
Z
ORB
®
Thyristor Overvoltage Protectors
DO-214AC (SMA)
Symbol
Breakdown Voltage
62 to 270V
Breakover Voltage
82 to 360V
Peak Pulse Current
30A (10/1000µs)
50A (8/20µs)
Holding Current
150mA minimum
Features
• Bidirectional crowbar protection
• Complies with Bellcore TR-NWT-001089, and
IEC-1000-4-5 standards
• Series is designed to protect telecommunication
equipment against lightening and AC induced transients
• Plastic package has UL Flammability Classification 94V-0
• Low profile package with built-in strain relief for surface
mounted applications
Mechanical Data
Case:
JEDEC DO-214AC molded plastic body over
passivated junction
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position:
Any
Weight:
0.002 ounces, 0.064 gram
Maximum Ratings and Thermal Characteristics
T = 25 C unless otherwise noted.
A
O
Parameter
Power Dissipation
Peak Pulse Current
Non-repetitive surge peak on-state current
Critical rate of rise of off-state voltage (V
RM
)
Storage temperature range
Maximum junction temperature
Thermal resistance junction to leads
Thermal resistance junction to ambient on P.C.B.
with recommended pad layout
T
A
= 50°C
10/1000µs
8/20µs
tp = 20ms
Symbol
P
I
PP
I
TSM
dV/dt
T
stg
T
j
R
ΘJL
R
ΘJA
Value
3
30
50
15
5
–55 to +150
150
30
120
Unit
W
A
A
KV/µs
°C
°C
°C/W
°C/W
I
PP
Ratings for the Following Surge Standards:
Standard
GR-1089-CORE
IEC61000-4-5
FCC Part 68
ITU-TK20/21
FCC Part 68
GR-1089-CORE
Values with
+
Waveform
2/10µs
8/20µs
10/160µs
10/700µs
10/560µs
10/1000µs
I
PP
150A
+
120A
+
65A
+
45A
+
35A
30A
have improved I
PP
specs over equivalent competitor part numbers
Document Number 88398
25-Nov-03
www.vishay.com
1
SMP30 Series
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics
(T
Type
Device
Marking
Code
QAA
QAB
QAC
QAD
QAE
QAF
QAG
QAH
QAI
QAJ
Minimum
Breakdown
Voltage
V
(BR)
(V)
62
68
100
120
130
180
200
220
240
270
Test
Current
I
(BR)
(µA)
50
50
50
50
50
50
50
50
50
50
A
= 25°C unless otherwise noted)
Stand-off
Voltage
V
DRM
(V)
56
61
90
108
117
162
180
198
216
243
Max. Reverse Maximum
Breakover
Leakage at
Voltage
V
DRM
V
BO
(V)
(1)(3)
I
DRM
(µA)
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
80*
90
125*
145*
165*
240
265*
290*
320
350*
Maximum
Breakover
Current
I
BO
(mA)
(1)
800
800
800
800
800
800
800
800
800
800
Minimum
Holding
Current
I
H
(mA)
150
150
150
150
150
150
150
150
150
150
Typical
Capacitance
C (pF)
(2)
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
TBD
SMP30-62
SMP30-68
SMP30-100
SMP30-120
SMP30-130
SMP30-180
SMP30-200
SMP30-220
SMP30-240
SMP30-270
Notes:
(1) dv/dt
≤
2V/µs
(2) V
R
=1V, f = 1MHz
(3) Values with * have improved V
BO
specs over equivalent competitor part numbers
I
I
pp
I
H
I
BO
I
(BR)
I
DRM
V
DRM
V
(BR)
V
BO
V
www.vishay.com
2
Document Number 88398
25-Nov-03
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