CYStech Electronics Corp.
N-Channel Logic Level Enhancement Mode Power MOSFET
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 1/9
MTB11N03BQ8
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast Switching Characteristic
•
Repetitive Avalanche Rated
•
Pb-free and Halogen-free package
BV
DSS
I
D
@V
GS
=10V, T
A
=25°C
R
DSON
(typ)@V
GS
=10V, I
D
=12A
R
DSON
(typ)@V
GS
=4.5V, I
D
=12A
30V
12A
8.8mΩ
12.8mΩ
Symbol
MTB11N03BQ8
Outline
SOP-8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
MTB11N03BQ8-0-T3-G
Package
Shipping
SOP-8
(Pb-free lead plating & halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
10s
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 2/9
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
A
=25°C, V
GS
=10V
*3
Continuous Drain Current @ T
A
=70°C, V
GS
=10V
*3
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=1mH, I
D
=12A, R
G
=25Ω
Repetitive Avalanche Energy @ L=0.05mH
T
A
=25℃
Total Power Dissipation
*3
T
A
=70℃
Operating Junction and Storage Temperature Range
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
E
AR
P
D
Tj, Tstg
12
7.6
30
±25
8.3
6.6
V
48
*1
12
72
5
*2
1.4
2.5
1.6
0.9
-55~+150
A
mJ
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-ambient
*3
Thermal Resistance, Junction-to case
t≤10s
Steady State
Steady State
Symbol
R
θJA
R
θJC
Typical
35
70
16
Maximum
40
85
25
Unit
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle≤1%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 125°C/W when mounted on minimum copper pad.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
*1
I
GSS
I
DSS
R
DS(ON)
Dynamic
Ciss
Coss
Crss
*1
Min.
30
1.0
-
-
-
-
-
-
-
-
-
Typ.
-
-
19
-
-
-
8.8
12.8
751
199
106
Max.
-
2.5
-
±
100
1
5
12
17
-
-
-
Unit
Test Conditions
V
GS
=0V, I
D
=250μA
V
DS
= V
GS
, I
D
=250μA
V
DS
=5V, I
D
=11A
V
GS
=
±
25V
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V, Tj=55°C
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=12A
V
S
nA
μA
m
Ω
m
Ω
pF
V
GS
=0V, V
DS
=10V, f=1MHz
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (T
C
=25°C, unless otherwise specified)
Symbol
Qg (V
GS
=10V)
*1, 2
Qg (V
GS
=5V)
*1, 2
Qgs
*1, 2
Qgd
*1, 2
t
d(ON)
*1, 2
tr
*1, 2
t
d(OFF)
*1, 2
t
f
*1, 2
Rg
Source-Drain Diode
I
S
*1
I
SM
*3
V
SD
*1
trr
Qrr
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
15.9
9.6
2.7
4.7
9
17.4
32.4
10
1.8
-
-
0.84
10.3
4.2
Max.
-
-
-
-
-
-
-
-
-
12
48
1.3
-
-
Unit
nC
Test Conditions
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 3/9
V
DS
=24V, V
GS
=10V, I
D
=11A
ns
Ω
V
DS
=15V, I
D
=5.5A, V
GS
=10V,
R
GS
=4.7Ω
f=1MHz
A
V
ns
nC
I
S
=12A, V
GS
=0V
I
F
=11A, dI
F
/dt=100A/μs
Note : *1.Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
48
40
I
D
, Drain Current(A)
32
V
GS
=4V
BV
DSS
, Normalized Drain-Source
Breakdown Voltage
10V,9V,8V,7V,6V
5V
V
GS
=4.5V
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 4/9
Brekdown Voltage vs Ambient Temperature
1.4
1.2
1
0.8
0.6
0.4
I
D
=250
μ
A,
V
GS
=0V
24
16
V
GS
=3.5V
8
0
0
2
4
6
8
V
DS
, Drain-Source Voltage(V)
10
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
V
GS
=3.5V
V
GS
=4.5V
V
SD
, Source-Drain Voltage(V)
1.0
0.8
0.6
0.4
0.2
Tj=25°C
10
V
GS
=10V
Tj=150°C
1
0.1
1
10
I
D
, Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
100
0
4
8
12
16
I
DR
, Reverse Drain Current(A)
20
Drain-Source On-State Resistance vs Junction Tempearture
100
90
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
80
70
60
50
40
30
20
10
0
0
2
4
6
8
V
GS
, Gate-Source Voltage(V)
10
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
I
D
=12A
2.4
2.0
1.6
1.2
0.8
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
V
GS
=10V, I
D
=12A
V
GS
=4.5V, I
D
=12A
MTB11N03BQ8
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
10000
V
GS(th)
, Normalized Threshold Voltage
Ciss
Spec. No. : CA00Q8
Issued Date : 2015.05.01
Revised Date :
Page No. : 5/9
Threshold Voltage vs Junction Tempearture
1.4
1.2
1.0
0.8
0.6
I
D
=250
μ
A
I
D
=1mA
Capacitance---(pF)
1000
C
oss
100
Crss
f=1MHz
10
0.1
1
10
V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
G
FS
, Forward Transfer Admittance(S)
0.4
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
100
Gate Charge Characteristics
10
I
D
=11A
10
V
GS
, Gate-Source Voltage(V)
8
6
4
V
DS
=24V
1
V
DS
=5V
Pulsed
Ta=25°C
V
DS
=6V
0.1
V
DS
=12V
2
0
0.01
0.001
0.01
0.1
1
I
D
, Drain Current(A)
10
100
0
2
4
6
8
10
12
14
16
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
14
Maximum Safe Operating Area
100
R
DS(ON)
Limit
I
D
, Drain Current(A)
10
100
μ
s
1ms
I
D
, Maximum Drain Current(A)
12
10
8
6
4
2
0
T
A
=25°C,R
θ
JA
=40°C/W,V
GS
=10V
1
10ms
100ms
1s
T
A
=25°C, Tj=150°C
V
GS
=10V,R
θ
JA
=40°C/W
Single Pulse
0.1
DC
0.01
0.01
0.1
1
10
V
DS
, Drain-Source Voltage(V)
100
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
MTB11N03BQ8
CYStek Product Specification
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