CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 1/8
MTB09P04DFP
Features
•
Single Drive Requirement
•
Low On-resistance
•
Fast switching Characteristic
•
Pb-free lead plating package
BV
DSS
I
D
@ V
GS
=-10V, T
C
=25°C
R
DS(ON)
@V
GS
=-10V, I
D
=-25A
R
DS(ON)
@V
GS
=-4.5V, I
D
=-15A
-40V
-56A
6.1mΩ(typ)
7.8mΩ(typ)
Symbol
MTB09P04DFP
Outline
TO-220FP
G：Gate
D：Drain
S：Source
G D S
Ordering Information
Package
TO-220FP
MTB09P04DFP-0-UB-S
(Pb-free lead plating package)
Device
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTB09P04DFP
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Symbol
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 2/8
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @V
GS
=-10V, T
C
=25°C (Package limited)
Continuous Drain Current @V
GS
=-10V, T
C
=25°C (Silicon limited)
Continuous Drain Current @V
GS
=-10V, T
C
=100°C
Continuous Drain Current @V
GS
=-10V, T
A
=25°C
(Note 2)
Continuous Drain Current @V
GS
=-10V, T
A
=70°C
(Note 2)
Pulsed Drain Current
(Note 4)
T
C
=25℃
(Note 1)
T
C
=100℃
(Note 1)
Power Dissipation
T
A
=25℃
(Note 2)
T
A
=70℃
(Note 2)
Single Pulse Avalanche Energy @L=1mH, I
AS
=-23A
(Note 3)
Single Pulse Avalanche Current
(Note 3)
Operating Junction and Storage Temperature
V
DS
V
GS
I
D
I
DSM
I
DM
P
D
P
DSM
E
AS
I
AS
Tj, Tstg
-40
±20
-56
-83
-52.5
-12.4
-9.9
-332
89
35.6
2
1.3
264
-23
-55~+150
V
A
W
mJ
A
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t≤10s
Thermal Resistance, Junction-to-ambient, max
Symbol
R
th,j-c
(Note 1)
(Note 1)
R
th,j-a
Value
1.4
15
62.5
Unit
°C/W
Note : 1
.
The power dissipation P
D
is based on T
J(MAX)
=150
°
C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2
.
The value of R
θJA
is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air environment
with T
A
=25
°
C. The power dissipation P
DSM
is based on R
θJA
and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design.
3
.
Pulse width limited by junction temperature T
J(MAX)
=150
°
C.
4.
Pulse width
≤300μs
pulses and duty cycle
≤0.5%.
5. The R
θJA
is the sum of thermal resistance from junction to case R
θJC
and case to ambient.
MTB09P04DFP
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Static
BV
DSS
V
GS(th)
G
FS
I
GSS
I
DSS
*R
DS(ON)
Min.
-40
-1.0
-
-
-
-
-
-
Typ.
-
-
51
-
-
-
6.1
7.8
121.5
18.2
19.3
21.2
25
148.4
52.6
6576
554
291
-
-0.87
23
12
Max.
-
-2.5
-
±
100
-1
-25
7.7
10.6
-
-
-
-
-
-
-
-
-
-
-56
-1.2
-
-
Unit
Test Conditions
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 3/8
V
S
nA
μA
m
Ω
V
GS
=0V, I
D
=-250μA
V
DS
= V
GS
, I
D
=-250μA
V
DS
=-5V, I
D
=-25A
V
GS
=
±
20V
V
DS
=-32V, V
GS
=0V
V
DS
=-32V, V
GS
=0V, Tj=70°C
V
GS
=-10V, I
D
=-25A
V
GS
=-4.5V, I
D
=-15A
I
D
=-25A, V
DS
=-20V, V
GS
=-10V
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*t
d(ON)
-
*tr
-
*t
d(OFF)
-
*t
f
-
Ciss
-
Coss
-
Crss
-
Source-Drain Diode
*I
S
-
*V
SD
-
*trr
-
*Qrr
-
nC
ns
V
DS
=-20V, V
GS
=-10V, R
G
=3.3
Ω
,
I
D
=-25A
V
GS
=0V, V
DS
=-20V, f=1MHz
pF
A
V
ns
nC
I
S
=-25A, V
GS
=0V
I
F
=-25A, V
GS
=0V, dI
F
/dt=100A/μs
*Pulse Test : Pulse Width
≤300μs,
Duty Cycle≤2%
MTB09P04DFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Typical Output Characteristics
100
-BV
DSS
, Normalized Drain-Source
Breakdown Voltage
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 4/8
Brekdown Voltage vs Ambient Temperature
1.4
10V,9V, 8V, 7V, 6V, 5V, 4V
-I
D
, Drain Current(A)
80
3.5
V
1.2
1
0.8
0.6
0.4
I
D
=-250
μ
A,
V
GS
=0V
60
40
20
0
0
1
3V
2.5V
-V
GS
=2V
2
3
4
-V
DS
, Drain-Source Voltage(V)
5
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1.2
-V
SD
, Source-Drain Voltage(V)
V
GS
=0V
100
R
DS(ON)
, Static Drain-Source On-State
Resistance(mΩ)
-4.5V
-3V
1
Tj=25°C
0.8
0.6
Tj=150°C
10
-10V
0.4
0.2
1
0.01
0.1
1
10
-I
D
, Drain Current(A)
100
0
5
10
15
-I
DR
, Reverse Drain Current(A)
20
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Drain-Source On-State Resistance vs Junction Tempearture
200
2
R
DS(ON)
, Normalized Static Drain-
Source On-State Resistance
R
DS(ON)
, Static Drain-Source On-
State Resistance(mΩ)
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
-V
GS
, Gate-Source Voltage(V)
10
I
D
=-25A
1.6
1.2
0.8
0.4
V
GS
=-10V, I
D
=-25A
R
DS(ON)
@Tj=25°C : 6.1mΩ
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
MTB09P04DFP
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Capacitance vs Drain-to-Source Voltage
-V
GS(th)
, Normalized Threshold Voltage
10000
Ciss
Spec. No. : C877FP
Issued Date : 2015.07.06
Revised Date :
Page No. : 5/8
Threshold Voltage vs Junction Tempearture
1.4
I
D
=-250
μ
A
1.2
1
0.8
0.6
0.4
Capacitance---(pF)
1000
C
oss
Crss
100
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
100
100
-75 -50 -25
0
25
50
75 100 125 150 175
Tj, Junction Temperature(°C)
Gate Charge Characteristics
10
V
DS
=-20V
G
FS
, Forward Transfer Admittance(S)
-V
GS
, Gate-Source Voltage(V)
10
8
V
DS
=-10V
6
V
DS
=-32V
1
V
DS
=-5V
Pulsed
Ta=25°C
4
2
I
D
=-25A
0.1
0.01
0.001
0
0.01
0.1
1
-I
D
, Drain Current(A)
10
100
0
20
40
60
80
100
Qg, Total Gate Charge(nC)
120
140
Maximum Safe Operating Area
1000
100
-I
D
, Drain Current(A)
10
DC
R
DS(ON)
Limit
Maximum Drain Current vs CaseTemperature
100
-I
D
, Maximum Drain Current(A)
10μs
100μs
1ms
10ms
100ms
90
80
70
60
50
40
30
20
10
0
25
Silicon Limit
1
0.1
0.01
0.01
0.1
1
10
-V
DS
, Drain-Source Voltage(V)
100
T
C
=25°C, Tj=150°, V
GS
=-10V
R
θJC
=1.4°C/W, Single Pulse
Limited by package
V
GS
=-10V, R
θ
JC
=1.4°C/W
50
75
100
125
T
C
, Case Temperature(°C)
150
175
MTB09P04DFP
CYStek Product Specification
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