CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
FEATURES:
•
Low Leakage Current (40nA TYP @ VRRM)
•
Low Forward Voltage Drop Schottky Diodes
•
High 1.0A Current Rating
HD DIP CASE
MAXIMUM RATINGS:
(TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
RMS Reverse Voltage
Average Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
VR(RMS)
IO
IFSM
PD
TJ
Tstg
Θ
JA
100
100
71
1.0
20
1.2
-50 to +125
-55 to +150
85
UNITS
V
V
V
A
A
W
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS PER DIODE:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
IR
VR=100V
0.04
10
IR
VR=100V, TA=50°C
1.0
IR
BVR
VF
VF
CJ
VR=100V, TA=100°C
IR=150μA
IF=500mA
IF=1.0A
VR=4.0V, f=1.0MHz
20
100
615
690
230
700
750
UNITS
μA
mA
mA
V
mV
mV
pF
R6 (22-May 2012)
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
MARKING CODE: CSH110
R6 (22-May 2012)
w w w. c e n t r a l s e m i . c o m
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (22-May 2012)
w w w. c e n t r a l s e m i . c o m
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