High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | ON Semiconductor(安森美) |
| 包装说明 | UDFN-8 |
| Reach Compliance Code | compli |
| 备用内存宽度 | 8 |
| 最大时钟频率 (fCLK) | 0.5 MHz |
| JESD-30 代码 | R-PDSO-N8 |
| JESD-609代码 | e4 |
| 长度 | 3 mm |
| 内存密度 | 16384 bi |
| 内存集成电路类型 | EEPROM |
| 内存宽度 | 16 |
| 湿度敏感等级 | 1 |
| 功能数量 | 1 |
| 端子数量 | 8 |
| 字数 | 1024 words |
| 字数代码 | 1000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 1KX16 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | HVSON |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
| 并行/串行 | SERIAL |
| 座面最大高度 | 0.55 mm |
| 串行总线类型 | MICROWIRE |
| 最大供电电压 (Vsup) | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V |
| 标称供电电压 (Vsup) | 5 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | NO LEAD |
| 端子节距 | 0.5 mm |
| 端子位置 | DUAL |
| 宽度 | 2 mm |

| CAT93C86HU4I-GT3 | CAT93C86HU4E-GT3 | CAT93C86YI-G | CAT93C86_13 | HFE22-B/48-H2T12-R | CAT93C86YI-GT3 | |
|---|---|---|---|---|---|---|
| 描述 | High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read | High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read | High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read | High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read | MINIATURE HIGH POWER LATCHING RELAY | High Speed Operation: 4 MHz (5 V), 2 MHz (1.8 V) Sequential Read |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - | - | 符合 |
| 厂商名称 | ON Semiconductor(安森美) | ON Semiconductor(安森美) | ON Semiconductor(安森美) | - | - | ON Semiconductor(安森美) |
| 包装说明 | UDFN-8 | UDFN-8 | TSSOP-8 | - | - | TSSOP-8 |
| Reach Compliance Code | compli | compli | compli | - | - | compli |
| 备用内存宽度 | 8 | 8 | 8 | - | - | 8 |
| 最大时钟频率 (fCLK) | 0.5 MHz | 0.5 MHz | 2 MHz | - | - | 2 MHz |
| JESD-30 代码 | R-PDSO-N8 | R-PDSO-N8 | R-PDSO-G8 | - | - | R-PDSO-G8 |
| JESD-609代码 | e4 | e4 | e4 | - | - | e4 |
| 长度 | 3 mm | 3 mm | 4.4 mm | - | - | 4.4 mm |
| 内存密度 | 16384 bi | 16384 bi | 16384 bi | - | - | 16384 bi |
| 内存集成电路类型 | EEPROM | EEPROM | EEPROM | - | - | EEPROM |
| 内存宽度 | 16 | 16 | 16 | - | - | 16 |
| 湿度敏感等级 | 1 | 1 | 1 | - | - | 1 |
| 功能数量 | 1 | 1 | 1 | - | - | 1 |
| 端子数量 | 8 | 8 | 8 | - | - | 8 |
| 字数 | 1024 words | 1024 words | 1024 words | - | - | 1024 words |
| 字数代码 | 1000 | 1000 | 1000 | - | - | 1000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | - | - | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 125 °C | 85 °C | - | - | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | - | - | -40 °C |
| 组织 | 1KX16 | 1KX16 | 1KX16 | - | - | 1KX16 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY |
| 封装代码 | HVSON | HVSON | TSSOP | - | - | TSSOP |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | - | RECTANGULAR |
| 封装形式 | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH | - | - | SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
| 并行/串行 | SERIAL | SERIAL | SERIAL | - | - | SERIAL |
| 座面最大高度 | 0.55 mm | 0.55 mm | 1.2 mm | - | - | 1.2 mm |
| 串行总线类型 | MICROWIRE | MICROWIRE | MICROWIRE | - | - | MICROWIRE |
| 最大供电电压 (Vsup) | 5.5 V | 5.5 V | 5.5 V | - | - | 5.5 V |
| 最小供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | - | - | 1.8 V |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | - | - | 5 V |
| 表面贴装 | YES | YES | YES | - | - | YES |
| 技术 | CMOS | CMOS | CMOS | - | - | CMOS |
| 温度等级 | INDUSTRIAL | AUTOMOTIVE | INDUSTRIAL | - | - | INDUSTRIAL |
| 端子面层 | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | Nickel/Palladium/Gold (Ni/Pd/Au) | - | - | Nickel/Palladium/Gold (Ni/Pd/Au) |
| 端子形式 | NO LEAD | NO LEAD | GULL WING | - | - | GULL WING |
| 端子节距 | 0.5 mm | 0.5 mm | 0.65 mm | - | - | 0.65 mm |
| 端子位置 | DUAL | DUAL | DUAL | - | - | DUAL |
| 宽度 | 2 mm | 2 mm | 3 mm | - | - | 3 mm |
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