E2O0016-39-81
¡ Semiconductor
MSM82C37B-5RS/GS/VJS
¡ Semiconductor
PROGRAMMABLE DMA CONTROLLER
This version: Aug. 1999
MSM82C37B-5RS/GS/VJS
Previous version: Jan. 1998
GENERAL DESCRIPTION
The MSM82C37B-5RS/GS/VJS, DMA (Direct Memory Access) controller is capable of high-
speed data transfer without CPU intervention and is used as a peripheral device in microcomputer
systems. The device features four independent programmable DMA channels.
Due to the use of silicon gate CMOS technology, standby current is 10
mA
(max.), and power
consumption is as low as 10 mA (max.) when a 5 MHz clock is generated.
All items of AC characteristics are compatible with intel 8237A-5.
FEATURES
• Maximum operating frequency of 5 MHz (Vcc = 5 V
±10%)
• High-speed operation at very low power consumption due to silicon gate CMOS technology
• Wide operating temperature range from –40°C to +85°C
• 4-channels independent DMA control
• DMA request masking and programming
• DMA request priority function
• DREQ and DACK input/output logic inversion
• DMA address increment/decrement selection
• Memory-to-Memory Transfers
• Channel extension by cascade connection
• DMA transfer termination by EOP input
• Intel 8237A-5 compatibility
• TTL Compatible
• 40-pin Plastic DIP (DIP40-P-600-2.54): (Product name: MSM82C37B-5RS)
• 44-pin Plastic QFJ (QFJ44-P-S650-1.27): (Product name: MSM82C37B-5VJS)
• 44-pin Plastic QFP (QFP44-P-910-0.80-2K): (Product name: MSM82C37B-5GS-2K)
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¡ Semiconductor
MSM82C37B-5RS/GS/VJS
PIN CONFIGURATION (TOP VIEW)
40 pin Plastic DIP
IOR
IOW
MEMR
MEMW
NC
READY
HLDA
ADSTB
AEN
HRQ
CS
CLK
RESET
DACK
2
DACK
3
DREQ
3
DREQ
2
DREQ
1
DREQ
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
GND 20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A
7
A
6
A
5
A
4
EOP
A
3
A
2
A
1
A
0
V
CC
(+5 V)
DB
0
DB
1
DB
2
DB
3
DB
4
DACK
0
DACK
1
DB
5
DB
6
DB
7
44 pin Plastic QFP
43
MEMW
42
MEMR
41
IOW
40
IOR
EOP
34
33 A
3
32 A
2
31 A
1
30 A
0
29 V
CC
28 NC
27 DB
0
26 DB
1
25 DB
2
24 DB
3
23 DB
4
44 NC
39 NC
A
7
37 A
6
A
5
36
38
READY
HLDA
ADSTB
AEN
HRQ
NC
CS
CLK
RESET
1
2
3
4
5
6
7
8
9
DACK
2
10
DACK
3
11
35
A
4
44 pin Plastic QFJ
5
MEMW
4
MEMR
3
IOW
40
EOP
39 NC
38 A
3
37 A
2
36 A
1
35 A
0
34 V
CC
33 DB
0
32 DB
1
31 DB
2
30 DB
3
29 DB
4
DREQ
3
12
DREQ
2
13
DREQ
1
14
DREQ
0
15
GND 16
NC 17
DB
7
18
DB
6
19
DB
5
20
DACK
1
21
DACK
0
22
2
IOR
6 NC
1 NC
44 A
7
43 A
6
42 A
5
DB
5
26
NC 7
READY 8
HLDA 9
ADSTB 10
AEN 11
HRQ 12
CS
13
CLK 14
RESET 15
DACK2 16
NC 17
DACK
3
18
DREQ
3
19
DREQ
2
20
DREQ
1
21
DREQ
0
22
GND 23
DB
7
24
DB
6
25
DACK
1
27
41 A
4
DACK
0
28
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¡ Semiconductor
MSM82C37B-5RS/GS/VJS
BLOCK DIAGRAM
IOR
IOW
MEMR
MEMW
READY
ADSTB
AEN
CS
CLK
RESET
EOP
Base Word
Count
Register
(4
¥
16)
Current
Word
Count
Register
(4
¥
16)
Base
Address
Register
(4
¥
16)
Current
Address
Register
(4
¥
16)
TC
(Terminal Count)
Timing
Control
Circuit
Decrementer
Temporary Word
Count Register (16)
Incrementer/Decrementer
8 4
Temporary Address
Register (16)
4
Output
Buffer
Input/Output
Buffer
A
4 -
A
7
16 Bit Bus
16 Bit Bus
A
0 -
A
3
A
8
- A
15
Command
Control
Circuit
2
D
0 - 1
HLDA
HRQ
DREQ
0 - 3
DACK
0 - 3
Priority
4 Judgment
4
Circuit
Mode
Register
(4
¥
16)
Command
Register (8)
Mark
Register (4)
Request
Register (4)
Status
Register (8)
Temporary
Register (8)
Internal Data Bus
Input/Output
Buffer
DB
0 -
DB
7
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¡ Semiconductor
MSM82C37B-5RS/GS/VJS
ABSOLUTE MAXIMUM RATINGS
Parameter
Power Supply Voltage
Input Voltage
Output Voltage
Storage Temperature
Power Dissipation
Symbol
V
CC
V
IN
V
OUT
T
STG
P
D
Conditions
with respect
to GND
—
Ta = 25°C
1.0
Rating
MSM82C37B-5RS MSM82C37B-5GS MSM82C37B-5VJS
Unit
V
V
V
°C
–0.5 to +7
–0.5 to V
CC
+0.5
–0.5 to V
CC
+0.5
–55 to +150
0.7
1.0
W
RECOMMENDED OPERATING CONDITIONS
Parameter
Power Supply Voltage
Operating Temperature
"L" Input Voltage
"H" Input Voltage
Symbol
V
CC
T
op
V
IL
T
IH
Min.
4.5
–40
–0.5
2.2
Typ.
5.0
+25
—
—
Max.
5.5
+85
+0.8
V
CC
+ 0.5
Unit
V
°C
V
V
DC CHARACTERISTICS
Parameter
"L" Output Voltage
"H" Output Voltage
Input Leak Current
Output Leak Current
Average Power Supply
Current during Operations
Symbol
V
OL
V
OH
I
LI
I
LO
I
CC
Conditions
I
OL
= 3.2 mA
I
OH
= –1.0 mA
0V
£
V
IN
£
V
CC
0V
£
V
OUT
£
V
CC
Input frequency
5 MHz, when RESET
V
IN
= 0 V/V
CC
,
C
L
= 0 pF
HLDA = 0 V,
V
IL
= 0 V,
V
IH
= V
CC
V
CC
= 4.5 V
to 5.5 V
Ta = –40°C
to +85°C
Min.
—
3.7
–10
–10
Typ.
—
—
—
—
Max.
0.4
—
10
10
Unit
V
V
mA
mA
—
—
10
mA
Power Supply Current
in Standby Mode
I
CCS
—
—
10
mA
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¡ Semiconductor
MSM82C37B-5RS/GS/VJS
AC CHARACTERISTICS
DMA (Master) Mode
Symbol
t
AEL
t
AET
t
AFAB
t
AFC
t
AFDB
t
AHR
t
AHS
t
AHW
Item
Delay Time from CLK Falling Edge
up to AEN Leading Edge
Delay Time from CLK Rising Edge
up to AEN Trailing Edge
Delay Time from CLK Rising Edge
up to Address Floating Status
Delay Time from CLK Rising Edge
up to Read/Write Signal Floating Status
Delay Time from CLK Rising Edge
up to Data Bus Floating Status
Address Valid Hold Time
to Read Signal Trailing Edge
Data Valid Hold Time
to ADSTB Trailing Edge
Address Valid Hold Time
to Write Signal Trailing Edge
Delay Time from CLK Falling Edge
up to Active DACK
t
AK
Delay Time from CLK Rising Edge
up to
EOP
Leading Edge
Delay Time from CLK Rising Edge
up to
EOP
Trailing Edge
t
ASM
t
ASS
t
CH
t
CL
t
CY
Time from CLK Rising Edge
up to Address Valid
Data Set-up Time to ADSTB Trailing Edge
Clock High-level Time
Clock Low-level Time
CLK Cycle Time
Min.
—
—
—
—
—
t
CY
– 100
30
t
CY
– 50
—
—
—
—
100
68
68
200
(Ta = –40 to +85°C, V
CC
= 4.5 to 5.5 V)
Comments
Max.
Unit
200
130
90
120
170
—
—
—
170
170
170
170
—
—
—
—
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
—
—
—
—
—
—
—
—
(Note 3)
(Note 5)
—
—
—
(Note 6)
(Note 6)
—
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