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BZX84C22ET1G

产品描述Zener Voltage Regulators 225 mW SOT−23 Surface Mount
产品类别分立半导体    二极管   
文件大小160KB,共6页
制造商ON Semiconductor(安森美)
官网地址http://www.onsemi.cn
标准
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BZX84C22ET1G概述

Zener Voltage Regulators 225 mW SOT−23 Surface Mount

BZX84C22ET1G规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称ON Semiconductor(安森美)
零件包装代码SOT-23
包装说明R-PDSO-G3
针数3
Reach Compliance Codecompli
ECCN代码EAR99
配置SINGLE
二极管元件材料SILICON
二极管类型ZENER DIODE
最大动态阻抗55 Ω
JEDEC-95代码TO-236AB
JESD-30 代码R-PDSO-G3
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量3
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
极性UNIDIRECTIONAL
最大功率耗散0.225 W
认证状态Not Qualified
标称参考电压22 V
表面贴装YES
技术ZENER
端子面层Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
最大电压容差5.67%
工作测试电流5 mA

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BZX84CxxxET1G Series,
SZBZX84CxxxET1G Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
http://onsemi.com
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range
2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
225 W (8
X
20
ms)
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOT−23
CASE 318
STYLE 8
3
Cathode
1
Anode
MARKING DIAGRAM
xxx M
G
G
1
xxx
M
G
= Device Code
= Date Code*
= Pb−Free Package
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25C
Derated above 25C
Thermal Resistance, Junction−to−Ambient
Junction and Storage Temperature Range
Symbol
P
pk
P
D
R
qJA
P
D
R
qJA
T
J
, T
stg
Max
225
Unit
W
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
SOT−23
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
10,000 /
Tape & Reel
225
1.8
556
300
2.4
417
−65
to
+150
mW
mW/C
C/W
mW
mW/C
C/W
C
BZX84CxxxET1G
SZBZX84CxxxET1G
BZX84CxxxET3G
SZBZX84CxxxET3G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
January, 2012
Rev. 8
1
Publication Order Number:
BZX84C2V4ET1/D
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