BYT08P/600A/800A
Vishay Telefunken
Fast Recovery Silicon Power Rectifier
Features
D
D
D
D
D
D
D
D
Multiple diffusion
Low switch on power losses
Good soft recovery behaviour
Fast forward recovery time
Fast reverse recovery time
Low reverse current
Very low turn on transient peak voltage
Very good reverse current stability at high tem-
perature
14282
D
Low thermal resistance
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
Test Conditions
Type
BYT08P/600A
BYT08P/800A
Symbol
V
R
=V
RRM
V
R
=V
RRM
I
FSM
I
FRM
I
FAV
T
j
=T
stg
Value
600
800
50
16
8
–40...+150
Unit
V
V
A
A
A
°
C
t
p
=10ms,
half sinewave
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction case
Junction ambient
Test Conditions
Symbol
R
thJC
R
thJA
Value
2.0
85
Unit
K/W
K/W
Document Number 86017
Rev. 3, 24-Jun-98
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BYT08P/600A/800A
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Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
g
Reverse current
Forward recovery time
Turn on transient peak voltage
Reverse recovery characteristics
y
Reverse recovery time
Test Conditions
I
F
=8A
I
F
=8A, T
j
=100
°
C
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
I
F
=8A; di
F
/dt 50A/
m
s
F
Batt
F
F
F
V
Batt
=200V, T
j
=100
°
C,
i
R
=0.25xI
RM
x
I =8A, di /dt
x
–32A/
m
s,
,
,
V =200V, T =100
°
C
I =8A, di /dt
x
–32A/
m
s,
j
Type Symbol Min
V
F
V
F
I
R
I
R
t
fr
V
FP
I
RM
t
IRM
t
rr
Typ
Max
1.9
1.8
35
2
4,5
4
160
350
100
Unit
V
V
m
A
mA
ns
V
A
ns
ns
Reverse recovery current
Reverse recovery time
I
F
=0.5A, I
R
=1A, i
R
=0.25A
I
F
=1A, di
F
/dt –50A/
m
s,
V
Batt
=200V
I
F
=1A, di
F
/dt –50A/
m
s,
V
Batt
=200V, i
R
=0.25xI
RM
x
x
t
rr
I
RM
t
rr
1.7
75
50
ns
A
ns
Characteristics
(T
j
= 25
_
C unless otherwise specified)
1000
I
FAV
– Average Forward Current ( A )
I
R
– Reverse Current (
m
A )
10
100
8
R
thJA
=8K/W
6
10K/W
R
thJC
=2K/W
10
V
R
=V
RRM
1
4
20K/W
2
0
85K/W
0
40
80
120
160
200
T
amb
– Ambient Temperature (
°C
)
0.1
0
94 9357
40
80
120
160
200
94 9355
T
j
– Junction Temperature (
°C
)
Figure 1. Typ. Reverse Current vs. Junction Temperature
Figure 2. Max. Average Forward Current vs.
Ambient Temperature
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Document Number 86017
Rev. 3, 24-Jun-98
BYT08P/600A/800A
Vishay Telefunken
100
t
rr
– Reverse Recovery Time ( ns )
I
F
– Forward Current ( A )
250
10
200
I
F
= 8A
T
C
=100°C
150
1
100
50
0
0.1
0.01
0
94 9356
0.6
1.2
1.8
2.4
3.0
94 9360
0
50
100
150
200
250
300
350
V
F
– Forward Voltage ( V )
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
Figure 3. Typ. Forward Current vs. Forward Voltage
Figure 6. Reverse Recovery Time vs.
Forward Current Rate of Change
1200
1000
800
600
400
200
0
I
F
= 8A
T
C
=100°C
t
IRM
– Reverse Recovery Time for I
RM
( ns )
120
I
F
= 8A
T
C
=100°C
80
40
0
0
50
100
150
200
250
300
350
94 9361
Q
rr
– Reverse Recovery Charge ( nC )
160
0
50
100
150
200
250
300
350
94 9358
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
Figure 4. Reverse Recovery Time for I
RM
vs.
Forward Current Rate of Change
20
I
RM
– Reverse Recovery Current ( A )
Figure 7. Reverse Recovery Charge vs.
Forward Current Rate of Change
15
I
F
= 8A
T
C
=100°C
10
5
0
0
94 9359
50
100
150
200
250
300
350
–dI
F
/dt – Forward Current Rate of Change ( A/
m
s )
Figure 5. Reverse Recovery Current vs.
Forward Current Rate of Change
Document Number 86017
Rev. 3, 24-Jun-98
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BYT08P/600A/800A
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 86017
Rev. 3, 24-Jun-98
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