CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
These CENTRAL SEMICONDUCTOR devices
are combinations of dual, enhanced specification
transistors in a space saving SOT-563 package,
designed for small signal general purpose amplifier and
switching applications.
MARKING CODES: CMLT3904E:
CMLT3906E:
CMLT3946E:
CMLT3904EG*:
CMLT3906EG*:
CMLT3946EG*:
L04
L06
L46
C4G
C6G
46G
SOT-563 CASE
*
Device is
Halogen Free
by design
ENHANCED SPECIFICATIONS:
♦
BVCBO from 40V MIN to 60V MIN (PNP)
♦
BVEBO from 5.0V MIN to 6.0V MIN (PNP)
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
Collector-Emitter Voltage
♦
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance
♦
hFE from 60 MIN to 70 MIN (NPN/PNP)
♦
VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
60
40
6.0
200
350
300
150
-65 to +150
357
♦
BVCBO
BVCEO
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
♦
hFE
♦
hFE
hFE
♦
hFE
hFE
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
(TA=25°C unless otherwise noted)
NPN
PNP
SYMBOL
TEST CONDITIONS
MIN
TYP
TYP
MAX
ICEV
VCE=30V, VEB=3.0V
-
-
-
50
IC=10µA
IC=1.0mA
IE=10µA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
VCE=1.0V, IC=10mA
VCE=1.0V,
VCE=1.0V,
IC=50mA
IC=100mA
60
40
6.0
-
-
0.65
-
90
100
100
70
30
115
60
7.5
0.057
0.100
0.75
0.85
240
235
215
110
50
90
55
7.9
0.050
0.100
0.75
0.85
130
150
150
120
55
-
-
-
0.100
0.200
0.85
0.95
-
-
300
-
-
UNITS
nA
V
V
V
V
V
V
V
♦
Enhanced Specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm
2
R4 (20-January 2010)
CMLT3904E CMLT3904EG* NPN
CMLT3906E CMLT3906EG* PNP
CMLT3946E CMLT3946EG* NPN/PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
(TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
MAX
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
VCE=20V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=10V, IC=1.0mA, f=1.0kHz
VCE=5.0V, IC=100μA, RS =1.0kΩ
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
300
4.0
8.0
12
10
400
60
4.0
35
35
200
50
UNITS
MHz
pF
pF
kΩ
x10
-4
μS
dB
ns
ns
ns
ns
1.0
0.1
100
1.0
SOT-563 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
CMLT3904E
CMLT3904EG*
*
Device is
Halogen Free
by design
CMLT3906E
CMLT3906EG*
CMLT3946E
CMLT3946EG*
R4 (20-January 2010)
w w w. c e n t r a l s e m i . c o m
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