CMLT3904EG NPN
CMLT3906EG PNP
CMLT3946EG NPN/PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
Central
TM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT3904EG (two
single NPN), CMLT3906EG (two single PNP), and
CMLT3946EG (one each NPN and PNP complementary)
are combinations of enhanced specification transistors in
a space saving SOT-563 package, designed for small
signal general purpose amplifier and switching
applications.
•
Device is
Halogen Free
by design
•
Device is
RoHS
compliant
SOT-563 CASE
MARKING CODES:
CMLT3904EG: C4G
CMLT3906EG: C6G
CMLT3946EG: 46G
MAXIMUM RATINGS:
(TA=25°C)
♦
Collector-Base Voltage
Collector-Emitter Voltage
ENHANCED SPECIFICATIONS:
♦
BVCBO from 40V MIN to 60V MIN (PNP)
♦
BVEBO from 5.0V MIN to 6.0V MIN (PNP)
♦
VCE(SAT) from 0.3V MAX to 0.2V MAX (NPN)
from 0.4V MAX to 0.2V MAX (PNP)
♦
hFE from 60 MIN to 70 MIN (NPN/PNP)
SYMBOL
VCBO
VCEO
VEBO
IC
PD
PD
PD
TJ, Tstg
Θ
JA
60
40
6.0
200
350
300
150
-65 to +150
357
UNITS
V
V
V
mA
mW
mW
mW
°C
°C/W
♦
Emitter-Base Voltage
Collector Current
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
ELECTRICAL CHARACTERISTICS PER TRANSISTOR:
SYMBOL
ICEV
♦
BVCBO
BVCEO
TEST CONDITIONS
VCE=30V, VEB=3.0V
IC=10μA
IC=1.0mA
IE=10μA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
VCE=1.0V, IC=0.1mA
VCE=1.0V, IC=1.0mA
MIN
60
40
6.0
(TA=25°C unless otherwise noted)
NPN
PNP
TYP
TYP
MAX
50
115
60
7.5
.057
0.1
0.75
0.85
240
235
90
55
7.9
.05
0.1
0.75
0.85
130
150
0.1
0.2
0.85
0.95
UNITS
nA
V
V
V
V
V
V
V
♦
BVEBO
♦
VCE(SAT)
♦
VCE(SAT)
VBE(SAT)
VBE(SAT)
♦
hFE
0.65
90
100
♦
hFE
♦
Enhanced specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm
2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm
2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm
2
R0 (19-February 2008)
Central
SYMBOL
♦
hFE
hFE
hFE
fT
Cob
Cib
hie
hre
hfe
hoe
NF
td
tr
ts
tf
TM
CMLT3904EG NPN
CMLT3906EG PNP
CMLT3946EG NPN/PNP
ENHANCED SPECIFICATION
COMPLEMENTARY PICOmini
TM
SILICON TRANSISTORS
NPN
TYP
215
110
50
PNP
TYP
150
120
55
Semiconductor Corp.
ELECTRICAL CHARACTERISTICS PER TRANSISTOR
- Continued:
TEST CONDITIONS
MIN
VCE=1.0V, IC=10mA
100
VCE=1.0V, IC=50mA
70
VCE=1.0V, IC=100mA
30
VCE=20V, IC=10mA, f=100MHz
300
VCB=5.0V, IE=0, f=1.0MHz
VBE=0.5V, IC=0, f=1.0MHz
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
VCE=10V, IC=1.0mA, f=1.0kHz
0.1
VCE=10V, IC=1.0mA, f=1.0kHz
100
VCE=10V, IC=1.0mA, f=1.0kHz
1.0
VCE=5.0V,IC=100μA, RS =1.0KΩ,
f=10Hz to 15.7kHz
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, VBE=0.5V, IC=10mA, IB1=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
VCC=3.0V, IC=10mA, IB1=IB2=1.0mA
MAX
300
UNITS
4.0
8.0
12
10
400
60
4.0
35
35
200
50
MHz
pF
pF
kΩ
X10-4
μS
dB
ns
ns
ns
ns
♦
Enhanced specification
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
CMLT3904EG
MARKING CODE: C4G
CMLT3906EG
MARKING CODE: C6G
CMLT3946EG
MARKING CODE: 46G
R0 (19-February 2008)