电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

BYS11-90HE3/TR3

产品描述1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC
产品类别分立半导体    二极管   
文件大小83KB,共4页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
下载文档 详细参数 选型对比 全文预览

BYS11-90HE3/TR3概述

1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC

BYS11-90HE3/TR3规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称Vishay(威世)
零件包装代码DO-214AC
包装说明R-PDSO-C2
针数2
Reach Compliance Codeunknown
ECCN代码EAR99
其他特性FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
应用EFFICIENCY
配置SINGLE
二极管元件材料SILICON
二极管类型RECTIFIER DIODE
最大正向电压 (VF)0.75 V
JEDEC-95代码DO-214AC
JESD-30 代码R-PDSO-C2
JESD-609代码e3
湿度敏感等级1
最大非重复峰值正向电流40 A
元件数量1
相数1
端子数量2
最高工作温度150 °C
最低工作温度-55 °C
最大输出电流1.5 A
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
认证状态Not Qualified
最大重复峰值反向电压90 V
表面贴装YES
技术SCHOTTKY
端子面层Matte Tin (Sn)
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间40
Base Number Matches1

文档预览

下载PDF文档
BYS11-90
www.vishay.com
Vishay General Semiconductor
Surface Mount Schottky Barrier Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low power losses, high efficiency
• Very low switching losses
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AC (SMA)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
max.
Package
Diode variations
1.5 A
90 V
40 A
0.75 V
150 °C
DO-214AC (SMA)
Single
TYPICAL APPLICATIONS
For use in high frequency inverters, switching power
supplies, freewheeling diodes, oring diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
Peak forward surge current single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Junction and storage temperature range
8.3 ms
10 ms
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
SYMBOL
BYS11-90
BYS109
90
1.5
40
30
10 000
-55 to +150
V
A
A
V/μs
°C
UNIT
Revision: 23-Dec-14
Document Number: 86014
1
For technical questions within your region:
DiodessAmericas@vishay.com, DiodessAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYS11-90HE3/TR3相似产品对比

BYS11-90HE3/TR3 BYS11-90_08
描述 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC 1.5 A, 90 V, SILICON, RECTIFIER DIODE, DO-214AC

技术资料推荐更多

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 1586  1233  2809  2485  1171  32  25  57  51  24 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved