BYS11–90
Vishay
Semiconductors
Schottky Barrier Rectifier
Features
D
D
D
D
D
High efficiency
Low power losses
Very low switching losses
Low reverse current
High surge capability
15 811
Applications
Polarity protection
Low voltage, high frequency rectifiers
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Reverse voltage=
Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Test Conditions
Type
Symbol
V
R
=
V
RRM
I
FSM
I
FAV
T
j
=T
stg
Value
90
30
1.5
–55...+150
Unit
V
A
A
t
p
=10ms, half sinewave
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction lead
Test Conditions
T
L
=constant
mounted on epoxy–glass hard tissue
Junction ambient mounted on epoxy–glass hard tissue, 50mm
2
35
m
m Cu
mounted on Al–oxid–ceramic (Al
2
O
3
), 50mm
2
35
m
m Cu
Symbol
R
thJL
R
thJA
Value
25
150
125
100
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Reverse current
Test Conditions
I
F
=1A
V
R
=V
RRM
V
R
=V
RRM
, T
j
=100
°
C
Type
Symbol
V
F
I
R
Min
Typ
Max
750
100
1
Unit
mV
m
A
mA
Document Number 86014
Rev. 3, 08-Sep-00
www.vishay.com
1 (4)
BYS11–90
Vishay
Semiconductors
Characteristics
(T
j
= 25
_
C unless otherwise specified)
P
R
– Maximum Reverse Power Dissipation ( W )
2.0
I
FAV
– Average Forward Current ( A )
R
thJA
=25K/W
1.6
2.0
1.6
R
thJA
=25K/W
1.2
100K/W
0.8
0.4
0
200
95 9718
V
R
= 0 V, Half Sinewave
1.2
R
thJA
=100K/W
0.8
0.4
0
0
40
80
120
V
R
= V
R RM
160
125K/W
150K/W
0
40
80
120
160
200
95 9715
T
j
– Junction Temperature (
°C
)
T
amb
– Ambient Temperature (
°C
)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
1000
I
R
– Reverse Current ( mA )
V
R
= V
R RM
100
I
F
– Forward Current ( A)
Figure 4. Max. Average Forward Current vs.
Ambient Temperature
10.000
T
j
= 150°C
1.000
10
0.100
T
j
= 25°C
0.010
1
0.1
0
95 9716
0.001
40
80
120
160
200
16469
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
V
F
– Forward Voltage ( V )
T
j
– Junction Temperature (
°C
)
Figure 2. Max. Reverse Current vs. Junction Temperature
Figure 5. Forward Current vs. Forward Voltage
180
I
FAV
– Average Forward Current ( A )
2.0
C
D
– Diode Capacitance ( pF )
V
R
= V
R RM
, Half Sinewave, R
thJA
=25K/W
1.6
1.2
0.8
0.4
0
0
40
80
120
160
200
16470
160
140
120
100
80
60
40
20
0
0.1
1.0
10.0
f=1MHz
100.0
95 9717
T
amb
– Ambient Temperature (
°C
)
V
R
– Reverse Voltage ( V )
Figure 3. Max. Average Forward Current vs.
Ambient Temperature
Figure 6. Diode Capacitance vs. Reverse Voltage
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2 (4)
Document Number 86014
Rev. 3, 08-Sep-00
BYS11–90
Vishay
Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
www.vishay.com
4 (4)
Document Number 86014
Rev. 3, 08-Sep-00
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