New Product
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
Surface Mount T
RANS
Z
ORB®
Transient Voltage Suppressors
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional and bi-directional
• 600 W peak pulse power capability with a 10/1000 μs
waveform, repetitive rate (duty cycle): 0.01 %
DO-214AA (SMB J-Bend)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21 definition
PRIMARY CHARACTERISTICS
V
WM
P
PPM
I
FSM
(uni-directional only)
T
J
max.
5.0 V to 188 V
600 W
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case:
DO-214AA (SMBJ)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
per
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional use C or CA suffix (e.g. SMBJ10CA).
Electrical characteristics apply in both directions.
Polarity:
For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (fig. 1)
Peak pulse current with a 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
Notes
(1)
Non-repetitive current pulse, per fig. 3 and derated above T = 25 °C per fig. 2
A
(2)
Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
SYMBOL
P
PPM (1)(2)
I
PPM (1)
I
FSM (2)
T
J
, T
STG
VALUE
600
See next table
100
- 55 to + 150
UNIT
W
A
A
°C
Document Number: 89284
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
(+)SMBJ5.0
(+)SMBJ5.0A
(5)
(+)SMBJ6.0
(+)SMBJ6.0A
(+)SMBJ6.5
(+)SMBJ6.5A
(+)SMBJ7.0
(+)SMBJ7.0A
(+)SMBJ7.5
(+)SMBJ7.5A
(+)SMBJ8.0
(+)SMBJ8.0A
(+)SMBJ8.5
(+)SMBJ8.5A
(+)SMBJ9.0
(+)SMBJ9.0A
(+)SMBJ10
(+)SMBJ10A
(+)SMBJ11
(+)SMBJ11A
(+)SMBJ12
(+)SMBJ12A
(+)SMBJ13
(+)SMBJ13A
(+)SMBJ14
(+)SMBJ14A
(+)SMBJ15
(+)SMBJ15A
(+)SMBJ16
(+)SMBJ16A
(+)SMBJ17
(+)SMBJ17A
(+)SMBJ18
(+)SMBJ18A
(+)SMBJ20
(+)SMBJ20A
(+)SMBJ22
(+)SMBJ22A
(+)SMBJ24
(+)SMBJ24A
(+)SMBJ26
(+)SMBJ26A
(+)SMBJ28
(+)SMBJ28A
(+)SMBJ30
(+)SMBJ30A
(+)SMBJ33
(+)SMBJ33A
(+)SMBJ36
(+)SMBJ36A
(+)SMBJ40
(+)SMBJ40A
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2
DEVICE MARKING
CODE
UNI
KD
KE
KF
KG
KH
KK
KL
KM
KN
KP
KQ
KR
KS
KT
KU
KV
KW
KX
KY
KZ
LD
LE
LF
LG
LH
LK
LL
LM
LN
LP
LQ
LR
LS
LT
LU
LV
LW
LX
LY
LZ
MD
ME
MF
MG
MH
MK
ML
MM
MN
MP
MQ
MR
BI
KD
KE
KF
KG
AH
AK
KL
KM
AN
AP
AQ
AR
AS
AT
AU
AV
AW
AX
KY
KZ
BD
BE
LF
LG
BH
BK
BL
BM
LN
LM
LQ
LR
BS
BT
LU
LV
BW
BX
BY
BZ
CD
CE
MF
MG
CH
CK
CL
CM
CN
CP
CQ
CR
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
6.40
6.40
6.67
6.67
7.22
7.22
7.78
7.78
8.33
8.33
8.89
8.89
9.44
9.44
10.0
10.0
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
MAX.
7.82
7.07
8.15
7.37
8.82
7.98
9.51
8.60
10.2
9.21
10.9
9.83
11.5
10.4
12.2
11.1
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
TEST
CURRENT
I
T
(mA)
10
10
10
10
10
10
10
10
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
5.0
5.0
6.0
6.0
6.5
6.5
7.0
7.0
7.5
7.5
8.0
8.0
8.5
8.5
9.0
9.0
10
10
11
11
12
12
13
13
14
14
15
15
16
16
17
17
18
18
20
20
22
22
24
24
26
26
28
28
30
30
33
33
36
36
40
40
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
800
800
800
800
500
500
200
200
100
100
50
50
20
20
10
10
5.0
5.0
5.0
5.0
5.0
5.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
MAXIMUM
PEAK PULSE CLAMPING
SURGE
VOLTAGE AT
CURRENT
I
PPM
I
PPM
(A)
(2)
V
C
(V)
62.5
65.2
52.6
58.3
48.8
53.6
45.1
50.0
42.0
46.5
40.0
44.1
37.7
41.7
35.5
39.0
31.9
35.3
29.9
33.0
27.3
30.2
25.2
27.9
23.3
25.9
22.3
24.6
20.8
23.1
19.7
21.7
18.6
20.5
16.8
18.5
15.2
16.9
14.0
15.4
12.9
14.3
12.0
13.2
11.2
12.4
10.2
11.3
9.3
10.3
8.4
9.3
9.6
9.2
11.4
10.3
12.3
11.2
13.3
12.0
14.3
12.9
15.0
13.6
15.9
14.4
16.9
15.4
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.0
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
For technical questions within your region, please contact one of the following:
Document Number: 89284
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
DEVICE MARKING
DEVICE TYPE
CODE
MODIFIED
“J” BEND LEAD
UNI
BI
(+)SMBJ43
MS
CS
(+)SMBJ43A
MT
CT
(+)SMBJ45
MU
MU
(+)SMBJ45A
MV
MV
(+)SMBJ48
MW
MW
(+)SMBJ48A
MX
MX
(+)SMBJ51
MY
MY
(+)SMBJ51A
MZ
MZ
(+)SMBJ54
ND
ND
(+)SMBJ54A
NE
NE
(+)SMBJ58
NF
NF
(+)SMBJ58A
NG
NG
(+)SMBJ60
NH
NH
(+)SMBJ60A
NK
NK
(+)SMBJ64
NL
NL
(+)SMBJ64A
NM
NM
(+)SMBJ70
NN
NN
(+)SMBJ70A
NP
NP
(+)SMBJ75
NQ
NQ
(+)SMBJ75A
NR
NR
(+)SMBJ78
NS
NS
(+)SMBJ78A
NT
NT
(+)SMBJ85
NU
NU
(+)SMBJ85A
NV
NV
(+)SMBJ90
NW
NW
(+)SMBJ90A
NX
NX
(+)SMBJ100
NY
NY
(+)SMBJ100A
NZ
NZ
(+)SMBJ110
PD
PD
(+)SMBJ110A
PE
PE
(+)SMBJ120
PF
PF
(+)SMBJ120A
PG
PG
(+)SMBJ130
PH
PH
(+)SMBJ130A
PK
PK
(+)SMBJ150
PL
PL
(+)SMBJ150A
PM
PM
(+)SMBJ160
PN
PN
(+)SMBJ160A
PP
PP
(+)SMBJ170
PQ
PQ
(+)SMBJ170A
PR
PR
SMBJ188
PT
PT
SMBJ188A
PS
PS
BREAKDOWN
VOLTAGE
V
BR
AT I
T (1)
(V)
MIN.
47.8
47.8
50.0
50.0
53.3
53.3
56.7
56.7
60.0
60.0
64.4
64.4
66.7
66.7
71.1
71.1
77.8
77.8
83.3
83.3
86.7
86.7
94.4
94.4
100
100
111
111
122
122
133
133
144
144
167
167
178
178
189
189
209
209
MAX.
58.4
52.8
61.1
55.3
65.1
58.9
69.3
62.7
73.3
66.3
78.7
71.2
81.5
73.7
86.9
78.6
95.1
86.0
102
92.1
106
95.8
115
104
122
111
136
123
149
135
163
147
176
159
204
185
218
197
231
209
255
231
TEST
CURRENT
I
T
(mA)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
STAND-OFF
VOLTAGE
V
WM
(V)
43
43
45
45
48
48
51
51
54
54
58
58
60
60
64
64
70
70
75
75
78
78
85
85
90
90
100
100
110
110
120
120
130
130
150
150
160
160
170
170
188
188
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
(3)
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
MAXIMUM
MAXIMUM
PEAK PULSE CLAMPING
SURGE
VOLTAGE AT
CURRENT
I
PPM
(2)
I
PPM
(A)
V
C
(V)
7.8
8.6
7.5
8.3
7.0
7.8
6.6
7.3
6.2
6.9
5.8
6.4
5.6
6.2
5.3
5.8
4.8
5.3
4.5
5.0
4.3
4.8
4.0
4.4
3.8
4.1
3.4
3.7
3.1
3.4
2.8
3.1
2.6
2.9
2.2
2.5
2.1
2.3
2.0
2.2
1.7
2.0
76.7
69.4
80.3
72.7
85.5
77.4
91.1
82.4
96.3
87.1
103
93.6
107
96.8
114
103
125
113
134
121
139
126
151
137
160
146
179
162
196
177
214
193
231
209
268
243
287
259
304
275
344
328
Notes
(1)
Pulse test: t
50 ms
p
(2)
Surge current waveform per fig. 3 and derate per fig. 2
(3)
For bi-directional types having V
WM
of 10 V and less, the I
D
limit is doubled
(4)
All terms and symbols are consistent with ANSI/IEEE C62.35
(5)
For the bi-directional SMAJ5.0CA, the maximum V
BR
is 7.25 V
(6)
V = 3.5 V at I = 25 A (uni-directional only)
F
F
(+) Underwriters laboratory recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
Document Number: 89284
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient
Typical thermal resistance, junction to lead
Note
(1)
Mounted on minimum recommended pad layout
SYMBOL
R
JA
(1)
R
JL
VALUE
100
20
UNIT
°C/W
°C/W
ORDERING INFORMATION
(Example)
PREFERRED P/N
SMBJ5.0A-M3/52
SMBJ5.0A-M3/5B
UNIT WEIGHT (g)
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
BASE QUANTITY
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
100
150
T
J
= 25 °C
Pulse Width (t
d
)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
I
PPM
- Peak Pulse Current, % I
RSM
P
PPM
- Peak Pulse Power (kW)
t
r
= 10 µs
Peak Value
I
PPM
10
100
Half Value - I
PP
I
PPM
2
50
10/1000 µs Waveform
as defined by R.E.A.
t
d
0
0
1.0
2.0
3.0
4.0
1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0.1
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
t
d
- Pulse Width (s)
t - Time (ms)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 3 - Pulse Waveform
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentage, %
100
6000
75
C
J
- Junction Capacitance (pF)
Measured at
Zero Bias
1000
50
100
V
R
, Measured at Stand-Off
Voltage V
WM
Uni-Directional
Bi-Directional
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
P-P
100
200
25
0
0
25
50
75
100
125
150
175
200
10
1
10
T
J
- Initial Temperature (°C)
V
WM
- Reverse Stand-Off Voltage (V)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 4 - Typical Junction Capacitance
www.vishay.com
4
For technical questions within your region, please contact one of the following:
Document Number: 89284
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
100
200
Transient Thermal Impedance (°C/W)
Peak Forward Surge Current (A)
8.3 ms Single Half Sine-Wave
Uni-Directional Only
100
10
1.0
0.1
0.001
10
0.01
0.1
1.0
10
100
1000
1
10
100
t
p
- Pulse Duration (s)
Number of Cycles at 60 Hz
Fig. 5 - Typical Transient Thermal Impedance
Fig. 6 - Maximum Non-Repetitive Forward Surge Current
Uni-Directional Only
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-214AA (SMB-J-Bend)
Cathode Band
Mounting Pad Layout
0.085 (2.159)
MAX.
0.086 (2.20)
0.077 (1.95)
0.155 (3.94)
0.130 (3.30)
0.086 (2.18)
MIN.
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
MIN.
0.220 REF.
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.008 (0.2)
0 (0)
Document Number: 89284
Revision: 20-Apr-11
For technical questions within your region, please contact one of the following:
www.vishay.com
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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