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BDS17.MOD

产品描述Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
产品类别分立半导体    晶体管   
文件大小198KB,共3页
制造商TT Electronics plc
官网地址http://www.ttelectronics.com/
下载文档 详细参数 选型对比 全文预览

BDS17.MOD概述

Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN

BDS17.MOD规格参数

参数名称属性值
是否Rohs认证不符合
厂商名称TT Electronics plc
包装说明HERMETIC SEALED, METAL, TO-220M, 3 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
其他特性HIGH RELIABILITY
外壳连接ISOLATED
最大集电极电流 (IC)8 A
集电极-发射极最大电压150 V
配置SINGLE
最小直流电流增益 (hFE)15
JESD-30 代码S-MSFM-P3
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料METAL
封装形状SQUARE
封装形式FLANGE MOUNT
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装NO
端子形式PIN/PEG
端子位置SINGLE
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)30 MHz

BDS17.MOD文档预览

SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
High Voltage
Hermetic TO220M (T0-257AB) Isolated Metal Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
BDS16
VCBO
VCEO
VEBO
IE, IC
IB
PD
TJ
T stg
Collector – Base Voltage (IE = 0)
Collector – Emitter Voltage (IB = 0)
Emitter – Base Voltage (IC = 0)
Emitter, Collector Current
Base Current
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
120V
120V
BDS17
150V
150V
TC
=
25°C
5V
8A
2A
43.75W
+200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
4.0
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3347
Issue 3
Page 1 of 1
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
ICEO
IEBO
VCEO(sus)
VCE(sat)
VBE(on)
hFE
(1)
(1)
(1)
Parameters
Collector Cut-Off Current
(IE = 0)
Collector Cut-Off Current
(IB = 0)
Emitter Cut-Off Current
(IC = 0)
Collector – Emitter
Sustaining Voltage (IB = 0)
Collector – Emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Test Conditions
BDS16
BDS17
BDS16
BDS17
VCB = 120V
VCB = 150V
VCE = 60V
VCE = 75V
VEB = 5V
BDS16
BDS17
IC = 4.0A
IC = 0.5A
IC = 1.0A
IC = 0.5A
IC = 4A
IC = 100mA
IC = 100mA
IB = 0.4A
IB = 0.05A
VCE = 2.0V
VCE = 2.0V
VCE = 2.0V
Min.
Typ
Max.
20
0.1
0.1
10
Units
µA
mA
µA
V
120
150
1.5
0.4
1.0
40
15
250
150
V
V
(1)
DYNAMIC CHARACTERISTICS
fT
ton
ts
tf
Transition Frequency
IC = 0.5A
F = 20MHz
IC = 2A
IB1 = 0.2A
IC = 2A
IB1 = - IB2 = 0.2A
VCC = 80V
VCC = 80V
VCE = 10V
30
MHz
Turn-On Time
Storage Time
Fall Time
0.5
2.0
0.3
µs
Notes
(1) Pulse Width
300us,
δ ≤
1.5%
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3347
Issue 3
Page 2 of 2
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BDS16 / BDS17
MECHANICAL DATA
Dimensions in mm (inches)
4.83 (0.190)
5.33 (0.210)
0.64 (0.025)
0.89 (0.035)
10.92 (0.430)
10.41 (0.410)
13.21 (0.52)
13.72 (0.54)
13.21 (0.52)
13.72 (0.54)
3.56 (0.140)
Dia
3.81 (0.150)
10.41 (0.410)
10.92 (0.430)
1
2
3
12.70 (0.500)
14.73 (0.750)
0.89 (0.035)
Dia.
1.27 (0.050)
2.54 (0.100)
BSC
3.05 (0.120)
BSC
TO220M (TO-257AB)
Pin 1 - Base
Pin 2 - Collector
Pin 3 - Emitter
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Semelab Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3347
Issue 3
Page 3 of 3

BDS17.MOD相似产品对比

BDS17.MOD BDS17R1 BDS17-QR-B BDS16R1 BDS17
描述 Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN Power Bipolar Transistor, 8A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, Metal, 3 Pin, HERMETIC SEALED, METAL, TO-220M, 3 PIN
是否Rohs认证 不符合 符合 不符合 符合 不符合
厂商名称 TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc TT Electronics plc
包装说明 HERMETIC SEALED, METAL, TO-220M, 3 PIN HERMETIC SEALED, METAL, TO-220M, 3 PIN FLANGE MOUNT, S-MSFM-P3 HERMETIC SEALED, METAL, TO-220M, 3 PIN FLANGE MOUNT, S-MSFM-P3
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
最大集电极电流 (IC) 8 A 8 A 8 A 8 A 8 A
集电极-发射极最大电压 150 V 150 V 150 V 120 V 150 V
配置 SINGLE SINGLE SINGLE SINGLE SINGLE
最小直流电流增益 (hFE) 15 15 15 15 15
JESD-30 代码 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
元件数量 1 1 1 1 1
端子数量 3 3 3 3 3
最高工作温度 200 °C 200 °C 200 °C 200 °C 200 °C
封装主体材料 METAL METAL METAL METAL METAL
封装形状 SQUARE SQUARE SQUARE SQUARE SQUARE
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
极性/信道类型 NPN NPN NPN NPN NPN
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
表面贴装 NO NO NO NO NO
端子形式 PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
晶体管应用 SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON SILICON SILICON SILICON
标称过渡频率 (fT) 30 MHz 30 MHz 30 MHz 30 MHz 30 MHz

 
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