LESHAN RADIO COMPANY, LTD.
Power MOSFET
130
mAmps, 50 Volts
P–Channel SOT–23
These miniature surface mount MOSFETs reduce power loss
conserve energy, making this device ideal for use in small power
management circuitry. Typical applications are dc–dc converters, load
switching, power management in portable and battery–powered
products such as computers, printers, cellular and cordless telephones.
•
Energy Efficient
•
Miniature SOT–23 Surface Mount Package Saves Board Space
•
Pb-Free Package is available.
LBSS84LT1G
S-LBSS84LT1G
3
1
2
•
We declare that the material of product are Halogen Free and
compliance with RoHS requirements.
SOT –23
•
S- Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable.
Marking Diagram
3 Drain
1
Gate
-
PD
2
Source
PD = Device Code
M = Month Code
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Drain–to–Source Voltage
Gate–to–Source Voltage – Continuous
Drain Current
– Continuous @ T
A
= 25°C
– Pulsed Drain Current (t
p
≤
10
µs)
Total Power Dissipation @ T
A
= 25°C
Operating and Storage Temperature
Range
Thermal Resistance – Junction–to–Ambient
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
Symbol
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
R
θJA
T
L
Value
50
±
20
130
520
225
– 55 to
150
556
260
mW
°C
°C/W
°C
Unit
V
dc
V
dc
mA
ORDERING INFORMATION
Device
LBSS84LT1G
S-LBSS84LT1G
LBSS84LT3G
S-LBSS84LT3G
SOT-23
10000/Tape&Reel
Package
SOT-23
Shipping
3000/Tape&Reel
M
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250
µAdc)
Zero Gate Voltage Drain Current
(VDS = 25 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc)
(VDS = 50 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate–Body Leakage Current (VGS =
±
20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
(Note 1.)
Gate–Source Threaded Voltage
(VDS = VGS, ID = 1.0 mAdc)
Static Drain–to–Source On–Resistance
(VGS = 5.0 Vdc, ID = 100 mAdc)
Transfer Admittance
(VDS = 25 Vdc, ID = 100 mAdc, f = 1.0 kHz)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
(Note 2.)
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
Gate Charge
SOURCE–DRAIN DIODE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (Note 2.)
1. Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2%.
2. Switching characteristics are independent of operating junction temperature.
IS
ISM
VSD
–
–
–
–
–
2.5
0.130
0.520
–
V
A
(VDD = –15 Vdc, ID = –2.5 Adc,
15
2.5
RL = 50
Ω)
td(on)
tr
td(off)
tf
QT
–
–
–
–
–
2.5
1.0
16
8.0
6000
–
–
–
–
–
pC
ns
(VDS = 5.0 Vdc)
(VDS = 5.0 Vdc)
(VDG = 5.0 Vdc)
Ciss
Coss
Crss
–
–
–
30
10
5.0
–
–
–
pF
VGS(th)
rDS(on)
|yfs|
0.8
–
50
–
5.0
–
2.0
10
–
Vdc
Ohms
mS
V(BR)DSS
IDSS
–
–
–
IGSS
–
–
–
–
–
0.1
15
60
±10
nAdc
50
–
–
Vdc
µAdc
Symbol
Min
Typ
Max
Unit
TYPICAL ELECTRICAL CHARACTERISTICS
0.6
I D , DRAIN CURRENT (AMPS)
0.5
0.4
0.3
0.2
0.1
0
1
1.5
2
2.5
3
3.5
4
VDS = 10 V
-55°C
25°C
0.5
0.45
I D , DRAIN CURRENT (AMPS)
0.4
0.3
0.2
0.1
0
0.35
3.0 V
2.75 V
2.5 V
2.25 V
0
1
2
3
4
5
6
7
8
9
10
0.25
TJ = 25°C
VGS = 3.5 V
3.25 V
150°C
0.15
0.05
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
Figure 2. On–Region Characteristics
Rev .O 2/4
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
9
8
7
6
5
4
3
2
0
0.1
0.2
0.3
0.4
-55°C
25°C
R DS(on) , DRAIN-TO-SOURCE RESISTANCE (OHMS)
7
6.5
6
5.5
5
4.5
4
3.5
3
2.5
2
0
0.1
0.2
0.3
0.4
-55°C
0.5
0.6
25°C
VGS = 10 V
VGS = 4.5 V
150°C
150°C
0.5
0.6
ID, DRAIN CURRENT (AMPS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
2
1.8
1.6
1.4
1.2
1
0.8
0.6
-55
-5
45
95
145
VGS = 10 V
ID = 0.52 A
Figure 4. On–Resistance versus Drain Current
RDS(on) , DRAIN-TO-SOURCE RESISTANCE
(NORMALIZED)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
8
7
6
5
4
3
2
1
0
0
VDS = 40 V
TJ = 25°C
VGS = 4.5 V
ID = 0.13 A
ID = 0.5 A
500
1000
1500
2000
TJ, JUNCTION TEMPERATURE (°C)
QT, TOTAL GATE CHARGE (pC)
Figure 5. On–Resistance Variation with Temperature
1
I D , DIODE CURRENT (AMPS)
Figure 6. Gate Charge
0.1
TJ = 150°C
25°C
-55°C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
VSD, DIODE FORWARD VOLTAGE (VOLTS)
Figure 7. Body Diode Forward Voltage
Rev .O 3/4
LESHAN RADIO COMPANY, LTD.
LBSS84LT1G,S-LBSS84LT1G
SOT-23
NOTES:
A
L
3
1
V
G
2
B S
DIM
A
B
C
D
G
H
J
K
L
S
V
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
C
D
H
K
J
PIN 1. BASE
2. EMITTER
3. COLLECTOR
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
Rev .O 4/4
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