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CHDTC113ZKPTGP

产品描述Transistor,
产品类别分立半导体    晶体管   
文件大小85KB,共3页
制造商CHENMKO
官网地址http://www.chenmko.com/
下载文档 详细参数 选型对比 全文预览

CHDTC113ZKPTGP概述

Transistor,

CHDTC113ZKPTGP规格参数

参数名称属性值
厂商名称CHENMKO
包装说明,
Reach Compliance Codeunknown

CHDTC113ZKPTGP文档预览

CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTC113ZKPT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated NPN transistors in one package.
* Built in bias resistor(R1=1.0kΩ, Typ. )
.041 (1.05)
.033 (0.85)
.018 (0.30)
.019 (0.50)
SOT-23
(1)
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
(3)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
(2)
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
Gnd
In
1
CIRCUIT
2
.045 (1.15)
.033 (0.85)
R2
TR
R1
.002 (0.05)
3
Out
Dimensions in millimeters
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
TOT
T
STG
T
J
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-01
PARAMETER
Supply voltage
Input voltage
CONDITIONS
-5
T
amb
25
O
C, Note 1
MIN.
MAX.
50
+10
100
V
V
UNIT
mA
100
200
+150
150
140
mW
O
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
−55
junction - soldering point
C
C
C/W
O
O
RATING CHARACTERISTIC ( CHDTC113ZUPT )
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
V
Ioff)
V
I(on)
V
O(on)
I
I
I
O(off)
h
FE
R
1
R
2
/R
1
f
T
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
I
E
=-5mA, V
CE
=10.0V
f=100MHz
=
CONDITIONS
I
O
=100uA; V
CC
=5.0V
I
O
=20mA; V
O
=0.3V
I
O
=10mA; I
I
=0.5mA
V
I
=5V
V
I
=0V; V
CC
=50V
I
O
=5mA; V
O
=5.0V
33
0.7
8.0
MIN.
0.3
0.1
1.0
10
250
TYP.
3.0
0.3
7.2
0.5
1.3
12
KΩ
MHz
MAX.
V
V
V
mA
uA
UNIT
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC113ZUPT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
50
V
O
=
0.3V
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
2m
1m
V
CC
=
5V
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100u
1m
10m
50m
100m
Ta=100
O
C
25
O
C
-40
O
C
OUTPUT CURRENT : Io
(A)
Ta=100
O
C
25
O
C
-40
O
C
100u
10u
1u
0
1.0
2.0
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
1k
500
DC CURRENT GAIN : G
I
Fig.3 DC current gain vs. output
current
V
O
= 5V
OUTPUT VOLTAGE : V
O(on)
(V)
Fig.4 Output voltage vs. output
current
1
l
O
/l
I
=
20
500m
200m
100m
50m
20m
10m
5m
2m
Ta=100
O
C
25
O
C
-40
O
C
200
100
50
20
10
5
2
1
100u
Ta=100
O
C
25
O
C
-40
O
C
1m
10m
100m
1m
100u
1m
10m
100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)

CHDTC113ZKPTGP相似产品对比

CHDTC113ZKPTGP CHDTC113ZKPT
描述 Transistor, Transistor,
厂商名称 CHENMKO CHENMKO
Reach Compliance Code unknown unknown

 
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