BC69
8
TRANSISTOR (PNP)
FEATURES
NPN Complement to BC868
Low Voltage
High Current
1. BASE
2. COLLECTOR
3. EMITTER
SOT-89-3L
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-32
-20
-5
-1
500
250
150
-55~+150
Unit
V
V
V
A
mW
℃/W
℃
℃
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
Collector-emitter saturation voltage
Base -emitter voltage
Transition frequency
V
CE(sat)
V
BE
f
T
Test
conditions
Min
-32
-20
-5
-0.1
-0.1
50
100
60
-0.5
-1
-0.62
V
V
V
MHz
375
Typ
Max
Unit
V
V
V
µA
µA
I
C
=-100µA,I
E
=0
I
C
=-1mA,I
B
=0
I
E
=-100µA,I
C
=0
V
CB
=-25V,I
E
=0
V
EB
=-5V,I
C
=0
V
CE
=-10V, I
C
=-5mA
V
CE
=-1V, I
C
=-0.5A
V
CE
=-1V, I
C
=-1A
I
C
=-1A,I
B
=-0.1A
V
CE
=-1V, I
C
=-1A
V
CE
=-10V, I
C
=-5mA
V
CE
=-5V,I
C
=-10mA, f=100MHz
40
CLASSIFICATION OF
h
FE(2)
RANK
RANGE
MARKING
BC869
100–375
CEC
BC869-16
100–250
CGC
BC869-25
160–375
CHC
１
JinYu
semiconductor
www.htsemi.com
Ｄ½½½：２０１１／０５
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