SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
TRANSISTOR (NPN)
Features
•
Batch
FEATURES
process design, excellent power dissipation offers
WILLAS
FM120-M
BC868
THRU
FM1200-M
PACKAGE
Pb Free Product
SOT-89
Package outline
SOD-123H
better reverse leakage current and thermal resistance.
High
Low profile surface mounted application in order to
•
current
optimize board space.
Low
•
voltage
loss, high efficiency.
Low power
•
High current capability, low forward voltage drop.
•
High surge capability.
MAXIMUM RATINGS
overvoltage protection.
•
Guardring for
(T
a
=25
℃
unless otherwise noted)
•
Ultra high-speed switching.
•
Symbol
Silicon epitaxial planar chip, metal silicon junction.
Unit
Parameter
Value
•
Lead-free parts meet environmental standards of
32
V
V
CBO
Collector-Base Voltage
MIL-STD-19500 /228
V
V
CEO
•
RoHS product for packing code suffix "G"
20
Collector-Emitter Voltage
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
1. BASE
2. COLLECTOR
3. EMITTER
0.071(1.8)
0.056(1.4)
V
EBO
I
C
P
C
T
J
T
stg
Emitter-Base
data
Mechanical
Voltage
5
V
-55~150
℃
Dimensions in inches and (millimeters)
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
•
Weight : Approximated 0.011 gram
Storage Temperature
Method 2026
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Emitter-base breakdown voltage
Marking Code
Pr
el
Single phase half wave, 60Hz, resistive of inductive load.
V
(BR)CEO
Collector-emitter breakdown voltage
For capacitive load, derate current by 20%
RATINGS
Ratings at 25℃ ambient temperature
V
(BR)CBO
I
C
=100μA,I
E
=0
Collector-base breakdown voltage
unless otherwise specified.
im
I
C
=1mA,I
B
=0
12
20
14
Parameter
Symbol
ina
ry
Test conditions
Min
32
20
14
40
28
40
15
50
35
50
16
60
42
60
1.0
85
30
40
120
50
Collector Current -Continuous
A
•
Epoxy : UL94-V0 rated flame retardant
1
Collector Power Dissipation
500
mW
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Junction Temperature
150
℃
Pb-Free package is available
0.040(1.0)
0.024(0.6)
RoHS product for packing code suffix ”G”
0.031(0.8)
“H”
Halogen
0.031(0.8)
product for packing code suffix
Typ.
free
Typ.
Typ
Max
Unit
V
V
V
(BR)EBO
I
CBO
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
U
I
E
=100μA,I
C
=0
V
CB
=25V,I
E
=0
21
13
30
5
Collector cut-off current
Maximum RMS Voltage
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
I
O
18
80
56
80
10
100
70
0.1
115
150
105
V
μA
120
200
140
200
V
V
Maximum DC Blocking Voltage
Emitter cut-off current
V
I
EBO
DC
20
30
V
EB
=5V,I
C
=0
100
0.1
150
μA
V
Maximum Average Forward Rectified Current
A
Peak Forward Surge Current 8.3 ms single half sine-wave
h
FE(1)
DC current gain
superimposed on rated load (JEDEC method)
I
FSM
V
CE
=1V,I
C
=500mA
V
CE
=1V,I
C
=1A
375
A
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
h
FE(2)
R
ΘJA
T
J
60
C
h
FE(3)
J
TSTG
V
CE(sat)
V
CE
=10V,I
C
-55 to +125
=5mA
-55 to +150
℃
Storage Temperature Range
Collector-emitter saturation voltage
CHARACTERISTICS
Maximum Forward Voltage
Base-emitter voltage
at 1.0A DC
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
I
C
=1A,I
B
=100mA
0.50
0.70
-
65
to +175
0.5
0.85
0.9
V
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
BE1
V
CE
=10V,I
C
=5mA
0.62
V
U
V
F
V
V
BE2
R
I
f
T
V
CE
=1V,I
C
=1A
V
CE
=5V,I
C
=10mA,f=100MHz
0.5
10
1
V
MHz
m
Transition
NOTES:
frequency
40
1- Measured at 1 MHZ and applied
FE(1)
CLASSIFICATION OF h
reverse voltage of 4.0 VDC.
Rank
2- Thermal Resistance From Junction to Ambient
BC868-10
85-160
CBC
BC868-16
100-250
CCC
BC868-25
160-375
CDC
Range
Marking
2012-
2012-06
0
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
SOT-89 Plastic-Encapsulate Transistors
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
FM120-M
BC868
THRU
FM1200-M
PACKAGE
Pb Free Produc
Features
Package outline
Outline Drawing
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOT-89
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
Mechanical data
.181(4.60)
ina
ry
0.031(0.8) Typ.
.173(4.39)
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.061REF
Method 2026
(1.55)REF
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
0.040(1.0)
0.024(0.6)
.063(1.60)
.055(1.40)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
im
12
20
13
30
21
30
Pr
el
.167(4.25)
.154(3.91)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.102(2.60)
.091(2.30)
14
15
40
50
28
40
35
50
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
.023(0.58)
14
V
RMS
.016(0.40)
V
DC
I
O
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
20
Maximum Average Forward Rectified Current
.047(1.2)
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
.031(0.8)
I
FSM
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
R
ΘJA
C
J
T
J
TSTG
Typical Junction Capacitance (Note 1)
-55 to +125
40
120
-55 to +150
-
65
to +175
.060TYP
(1.50)TYP
.118TYP
(3.0)TYP
@T A=25℃
@T A=125℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
.197(0.52)
.013(0.32)
0.50
V
F
I
R
0.70
10
.017(0.44)
.014(0.35)
0.85
0.9
0.92
0.5
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
Rev.C
WILLAS ELECTRONIC COR
WILLAS ELECTRONIC CORP.
2012-
0
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