Small Signal Transistor
BC846A-G Thru. BC848C-G
(NPN)
RoHS Device
Features
-Power dissipation
O
P
CM
: 0.20W (@T
A
=25 C)
-Collector current
I
CM
: 0.1A
-Collector-base voltage
V
CBO
: BC846=80V
BC847=50V
BC848=30V
-Operating and storage junction temperature
range: T
J
, T
STG
= -65 to +150
O
C
SOT-23
0.118(3.00)
0.110(2.80)
3
0.055(1.40)
0.047(1.20)
1
0.079(2.00)
0.071(1.80)
2
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
-Approx. weight: 0.008 grams
0.041(1.05)
0.035(0.90)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
Circuit diagram
-1.BASE
-2.EMITTER
-3.COLLECTOR
3
Dimensions in inches and (millimeter)
1
2
Maximum Ratings
(at Ta=25
Parameter
O
C unless otherwise noted)
Symbol
BC846-G
BC847-G
BC848-G
BC846-G
BC847-G
BC848-G
Value
80
50
30
65
45
30
6
0.1
200
150
-65 to +150
UNIT
Collector-Base Voltage
V
CBO
V
Collector-Emitter Voltage
V
CEO
V
Emitter-Base Voltage
V
EBO
I
C
P
C
T
J
T
STG
V
A
mW
°C
°C
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR31
REV:B
Page 1
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristics
(BC846A-G Thru. BC848C-G, @T
A
= 25 °C unless otherwise specified)
Parameter
Collector-Base Breakdown Voltage
BC846-G
BC847-G
BC848-G
BC846-G
BC847-G
BC848-G
Symbol
V
CBO
Test Conditions
I
C
=10μA , I
E
=0
MIN
80
50
30
65
45
30
TYP
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Emitter-Base Break Voltage
V
CEO
V
EBO
I
C
=10mA , I
B
=0
I
E
=10μA , I
C
=0
V
CB
=70V , I
E
=0
V
CB
=50V , I
E
=0
V
CB
=30V , I
E
=0
V
CB
=60V , I
E
=0
V
CB
=45V , I
E
=0
V
CB
=30V , I
E
=0
V
EB
=5V , I
C
=0
V
CE
=5V , I
C
=2mA
V
V
0.1
µA
6
Collector Cut-off Current
BC846-G
BC847-G
BC848-G
BC846-G
BC847-G
BC848-G
I
CBO
Collector Cut-off Current
Emitter cut-off current
DC Current Gain
I
CEO
I
EBO
0.1
0.1
110
200
420
220
450
800
0.5
1.1
100
4.5
µA
µA
BC846A,BC847A,BC848A
BC846B,BC847B,BC848B
BC847C,BC848C
h
FE
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
V
CE(sat)
I
C
=100mA , I
B
=5mA
V
BE(sat)
f
T
C
ob
I
C
=100mA , I
B
=5mA
V
CE
=5V , I
C
=10mA
f=100MH
Z
V
CB
=10V , f=1MH
Z
V
V
MH
Z
pF
REV:B
QW-BTR31
Page 2
Comchip Technology CO., LTD.
Small Signal Transistor
Electrical Characteristic Curves (BC846A-G Thru. BC848C-G)
Fig.1-
Static Characteristic
20
60uA
Fig.2- h
FE
— I
C
1000
COMMON EMITTER
V
CE
=5V
Ta=100°C
Collector Current, Ic ( mA )
COMMON
EMITTER
-450uA
Ta=25°C
54uA
48uA
42uA
12
8
36uA
30uA
24uA
DC Current Gain, h
FE
16
300
Ta=25°C
18uA
4
12uA
I
B
=
6uA
0
0
1
3
4
5
6
100
0.1
1
10
100
Collector-Emitter Voltage, V
CE
(V)
Collector Current, Ic ( mA )
Fig.3- V
CEsat
—
I
C
Collector-Emtter Saturation Voltage
,
V
CEsat
(mV)
1000
Fig.4- V
BEsat
— I
C
BASE-Emitter Saturation Voltage,
, VB
E
sat
(V)
1000
800
Ta=25°C
Ta=100°C
100
Ta=100°C
Ta=25°C
600
β=20
10
0.1
β=20
1
10
100
400
0.1
1
10
100
Collector Current, Ic ( mA )
Collector Current, Ic (mA)
Fig.5- I
C
100
—
V
BE
100
Fig.6- Cob/Cib
—
V
CB
/V
EB
f=1MHz
I
E
= 0/Ic =0
Ta = 25°C
Collector Current, Ic ( mA )
Common Emitter
V
CE
= 5V
Ta=100°C
Capacitance, C ( pF )
10
10
Cib
Cob
1
Ta=25°C
1
0.1
0.1
0.4
0.6
0.8
1.0
0.1
0.1
1
10
20
Base-Emitter Voltage, V
BE
( V )
Reverse Bias Voltage, V ( V )
Fig.7- f
T
— I
C
1000
250
V
CE
= 5V
Ta=25°C
Fig.8- P
C
— Ta
Transition Frequency , f
T
(MH
Z
)
Collector Power Dissipation,
P
C
(mW)
1
10
50
200
150
100
100
50
10
0
0
25
50
75
100
125
150
Collector Current, Ic (mA)
QW-BTR31
Ambient Temperature, Ta (°C)
REV:B
Page 3
Comchip Technology CO., LTD.
Small Signal Transistor
Reel Taping Specification
d
P0
P1
T
E
F
B
W
C
12
0
o
D
2
D
1
D
W
1
SYMBOL
A
3.15
±
0.10
0.124
±
0.004
B
2.77
±
0.10
0.109
±
0.004
C
1.22
±
0.10
0.048
±
0.004
d
1.50
±
0.10
0.059
±
0.004
D
178
±
2.00
7.008
±
0.079
D
1
54.40
±
1.00
2.142
±
0.039
D
2
13.00
±
1.00
0.512
±
0.039
SOT-23
(mm)
(inch)
SYMBOL
E
1.75
±
0.10
0.069
±
0.004
F
3.50
±
0.10
0.138
±
0.004
P
4.00
±
0.10
0.157
±
0.004
P
0
4.00
±
0.10
0.157
±
0.004
P
1
2.00
±
0.10
W
8.00
+
0.30 /
–0.10
W
1
12.30
±
1.00
SOT-23
(mm)
(inch)
0.079
±
0.004
0.315
+
0.012 /
–0.004
0.484
±
0.039
REV:B
QW-BTR31
Page 4
Comchip Technology CO., LTD.
Small Signal Schottky Diodes
Marking Code
Part Number
BC846A-G
BC847A-G
BC848A-G
BC846B-G
BC847B-G
BC848B-G
BC847C-G
BC848C-G
Marking Code
1A
1E
1J
1B
1F
1K
1G
1L
3
XX
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
SIZE
(mm)
A
B
C
D
0.80
1.90
2.02
2.82
(inch)
0.031
0.075
0.080
0.111
B
C
D
A
Standard Packaging
Qty Per Reel
Case Type
SOT-23
(Pcs)
3,000
Reel Size
(inch)
7
REV:B
QW-BTR31
Page 5
Comchip Technology CO., LTD.
Microchip MCU
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