High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | Infineon(英飞凌) |
| 包装说明 | CHIP CARRIER, R-XBCC-N3 |
| 针数 | 3 |
| Reach Compliance Code | compli |
| ECCN代码 | EAR99 |
| 其他特性 | LOW NOISE |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 0.1 A |
| 集电极-发射极最大电压 | 45 V |
| 配置 | SINGLE |
| 最小直流电流增益 (hFE) | 200 |
| JESD-30 代码 | R-XBCC-N3 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 150 °C |
| 封装主体材料 | UNSPECIFIED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 最大功率耗散 (Abs) | 0.25 W |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | Matte Tin (Sn) |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 250 MHz |
| BC847BL3 | BC847BF | BC848BL3 | BF850BF | BC846A_07 | BC848BF | BC849BF | |
|---|---|---|---|---|---|---|---|
| 描述 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 | High Speed CMOS Logic Quad D-Type Flip-Flop with Reset 16-SOIC -55 to 125 |
| 是否无铅 | 不含铅 | - | 不含铅 | - | - | 不含铅 | 不含铅 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | - | - | 符合 | 符合 |
| 厂商名称 | Infineon(英飞凌) | - | Infineon(英飞凌) | Infineon(英飞凌) | - | - | Infineon(英飞凌) |
| 包装说明 | CHIP CARRIER, R-XBCC-N3 | SMALL OUTLINE, R-PDSO-F3 | CHIP CARRIER, R-XBCC-N3 | SMALL OUTLINE, R-PDSO-F3 | - | SMALL OUTLINE, R-PDSO-F3 | SMALL OUTLINE, R-PDSO-F3 |
| 针数 | 3 | 3 | 3 | 3 | - | 3 | 3 |
| Reach Compliance Code | compli | unknow | compli | compli | - | compli | compli |
| ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 |
| 最大集电极电流 (IC) | 0.1 A | 0.1 A | 0.1 A | 0.1 A | - | 0.1 A | 0.1 A |
| 集电极-发射极最大电压 | 45 V | 45 V | 30 V | 45 V | - | 30 V | 30 V |
| 配置 | SINGLE | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE |
| 最小直流电流增益 (hFE) | 200 | 200 | 200 | 200 | - | 200 | 200 |
| JESD-30 代码 | R-XBCC-N3 | R-PDSO-F3 | R-XBCC-N3 | R-PDSO-F3 | - | R-PDSO-F3 | R-PDSO-F3 |
| JESD-609代码 | e3 | e3 | e3 | e3 | - | - | - |
| 湿度敏感等级 | 1 | 1 | - | - | - | 1 | 1 |
| 元件数量 | 1 | 1 | 1 | 1 | - | 1 | 1 |
| 端子数量 | 3 | 3 | 3 | 3 | - | 3 | 3 |
| 最高工作温度 | 150 °C | 150 °C | 150 °C | 150 °C | - | 150 °C | 150 °C |
| 封装主体材料 | UNSPECIFIED | PLASTIC/EPOXY | UNSPECIFIED | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR |
| 封装形式 | CHIP CARRIER | SMALL OUTLINE | CHIP CARRIER | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | NOT SPECIFIED | 260 | 260 | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 极性/信道类型 | NPN | NPN | NPN | NPN | - | NPN | NPN |
| 最大功率耗散 (Abs) | 0.25 W | 0.25 W | 0.25 W | 0.25 W | - | 0.25 W | 0.25 W |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES | YES | - | YES | YES |
| 端子面层 | Matte Tin (Sn) | MATTE TIN | Matte Tin (Sn) | MATTE TIN | - | - | - |
| 端子形式 | NO LEAD | FLAT | NO LEAD | FLAT | - | FLAT | FLAT |
| 端子位置 | BOTTOM | DUAL | BOTTOM | DUAL | - | DUAL | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | 40 | 40 | - | - | NOT SPECIFIED | NOT SPECIFIED |
| 晶体管应用 | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | - | AMPLIFIER | AMPLIFIER |
| 晶体管元件材料 | SILICON | SILICON | SILICON | SILICON | - | SILICON | SILICON |
| 标称过渡频率 (fT) | 250 MHz | 250 MHz | 250 MHz | 250 MHz | - | 250 MHz | 250 MHz |
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