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Datasheet> 器件分类 > 分立半导体> 晶体管> 2SA1399-T11E

2SA1399-T11E: 产品描述Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN; 产品类别分立半导体晶体管; 文件大小80KB，共2页; 制造商Mitsubishi(日本三菱); 官网地址http://www.mitsubishielectric.com/semiconductors/

下载文档详细参数选型对比全文预览

2SA1399-T11E概述

Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN

2SA1399-T11E规格参数

参数名称	属性值
零件包装代码	TO-92L
包装说明	CYLINDRICAL, O-PBCY-T3
针数	3
Reach Compliance Code	unknow
ECCN代码	EAR99
其他特性	HIGH CURRENT DRIVER
最大集电极电流 (IC)	0.4 A
集电极-发射极最大电压	50 V
配置	SINGLE
最小直流电流增益 (hFE)	150
JESD-30 代码	O-PBCY-T3
元件数量	1
端子数量	3
封装主体材料	PLASTIC/EPOXY
封装形状	ROUND
封装形式	CYLINDRICAL
极性/信道类型	PNP
认证状态	Not Qualified
表面贴装	NO
端子形式	THROUGH-HOLE
端子位置	BOTTOM
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	150 MHz
Base Number Matches	1

2SA1399-T11E相似产品对比

	2SA1399-T11E	2SA1399-11D	2SA1399-11E	2SA1399-T11F	2SA1399-T11D	2SA1399-11F
描述	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN	Small Signal Bipolar Transistor, 0.4A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
零件包装代码	TO-92L	TO-92L	TO-92L	TO-92L	TO-92L	TO-92L
包装说明	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
针数	3	3	3	3	3	3
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknow
ECCN代码	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
其他特性	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER	HIGH CURRENT DRIVER
最大集电极电流 (IC)	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A
集电极-发射极最大电压	50 V	50 V	50 V	50 V	50 V	50 V
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
最小直流电流增益 (hFE)	150	90	150	250	90	250
JESD-30 代码	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3	O-PBCY-T3
元件数量	1	1	1	1	1	1
端子数量	3	3	3	3	3	3
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
封装形式	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
极性/信道类型	PNP	PNP	PNP	PNP	PNP	PNP
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
表面贴装	NO	NO	NO	NO	NO	NO
端子形式	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
端子位置	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
晶体管应用	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
标称过渡频率 (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz
Base Number Matches	1	1	1	1	1	1

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