BC636 — PNP Epitaxial Silicon Transistor
March 2009
BC636
PNP Epitaxial Silicon Transistor
Switching and Amplifier Applications
• Complement to BC635
1
TO-92
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
T
Symbol
V
CER
V
CES
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Base Current
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage at R
BE
=1KΩ
Value
-45
-45
-45
-5
-1
-1.5
-100
1
150
-65 ~ 150
Units
V
V
V
V
A
A
mA
W
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
Electrical Characteristics
Symbol
BV
CEO
I
CBO
I
EBO
h
FE1
h
FE2
h
FE3
V
CE
(sat)
V
BE
(on)
f
T
T
a
= 25°C unless otherwise noted
Parameter
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Test Condition
I
C
= -10mA, I
B
=0
V
CB
= -30V, I
E
=0
V
EB
= -5V, I
C
=0
V
CE
= -2V, I
C
= -5mA
V
CE
= -2V, I
C
= -150mA
V
CE
= -2V, I
C
= -500mA
I
C
= -500mA, I
B
= -50mA
V
CE
= -2V, I
C
= -500mA
V
CE
= -5V, I
C
= -10mA,
f=50MHz
Min.
-45
Typ.
Max.
-0.1
-10
Units
V
μA
μA
25
40
25
250
-0.5
-1
100
V
V
MHz
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
1
www.fairchildsemi.com
BC636 — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
Figure 1. Static Characteristic
-500
Figure 2. DC Current Gain
1000
I
B
= - 1.8 mA
I
C
[mA], COLLECTOR CURRENT
I
B
= - 1.6 mA
-400
V
CE
= - 2V
I
B
= - 1.2 mA
-300
I
B
= - 1.0 mA
I
B
= - 0.8 mA
h
FE
, DC CURRENT GAIN
I
B
= - 1.4 mA
100
-200
I
B
= - 0.6 mA
I
B
= - 0.4 mA
-100
I
B
= - 0.2 mA
-0
-0
-10
-20
-30
-40
-50
10
-1
-10
-100
-1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
-10
Figure 4. Base-Emitter On Voltage
-1000
I
C
= 10 I
B
-1
V
BE
(sat)
I
C
[mA], COLLECTOR CURRENT
V
CE
= - 2V
-100
-0.1
-10
V
CE
(sat)
-0.01
-1
-10
-100
-1000
-1
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
100
f=1MHz
C
ob
[pF], CAPACITANCE
10
1
-1
-10
-100
V
CB
[V], COLLECTOR-BASE VOLTAGE
© 2009 Fairchild Semiconductor Corporation
BC636 Rev. C3
3
www.fairchildsemi.com
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Rev. I39
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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