WILLAS
SOT-363 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
SWITCHING
DIODES
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
FEATURES
•
Low power loss, high efficiency.
Fast Switching
capability, low forward voltage drop.
•
High current
Speed
•
General
capability.
For
High surge
Purpose Switching Applications
•
Guardring for overvoltage protection.
High Conductance
•
Ultra high-speed switching.
FM120-M
BAS16TW1T1
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
SOT-363
0.012(0.3) Typ.
0.146(3.7)
0.130(3.3)
Weight:0.05g
planar chip, metal silicon junction.
•
Silicon epitaxial
•
Lead-free parts
packing code suffix "G"
RoHS product for
meet environmental standards of
MIL-STD-19500 /228
Halogen
product for packing code suffix "G"
RoHS
free product for packing code suffix "H"
•
Moisture Sensitivity
for packing code suffix "H"
Halogen free product
Level 1
MARKING:
BAS16TW1T1: KA2
·
0.071(1.8)
0.056(1.4)
Mechanical data
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
Maximum Ratings @T
A
=25℃
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Parameter
2026
Method
Symbol
V
RM
V
RRM
V
RWM
Limits
100
Unit
Dimensions in inches and (millimeters)
V
•
Polarity : Indicated by
voltage
Non-Repetitive Peak reverse
cathode band
•
Mounting Position : Any
Peak Repetitive Peak reverse voltage
•
Peak
: Approximated 0.011 gram
Working
Weight
Reverse Voltage
75
V
V
R
DC Blocking
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Voltage
Ratings at 25℃ ambient
V
R(RMS)
RMS Reverse Voltage
temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
I
FM
For capacitive load, derate current by 20%
RATINGS
53
300
150
V
mA
mA
Forward Continuous Current
Average Rectified Output Current
Peak forward surge current @=1.0μs
Marking Code
Maximum Recurrent Peak Reverse Voltage
@=1.0s
Maximum RMS Voltage
Power Dissipation
Maximum DC Blocking Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
I
O
V
RRM
I
FSM
12
20
14
20
13
30
21
30
2.0
14
40
1.0
40
15
50
35
50
16
60
42
60
1.0
30
40
120
18
80
56
80
10
A
100
70
mW
100
K/W
115
150
105
150
120
200
140
200
Vo
V
RMS
Pd
V
DC
R
I
O
T
j
T
I
FSM
STG
θJA
28
200
Vol
Thermal Resistance Junction to Ambient
Junction temperature
Maximum Average Forward Rectified Current
625
Vol
150
-65~+150
℃
℃
Am
Peak Forward Surge Current
Storage temperature
8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Electrical Ratings @T
A
=25℃
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Parameter
Storage Temperature Range
R
ΘJA
C
J
T
J
Symbol
Min.
-55 to +125
Typ.
75
0.50
0.855
-55 to +150
Conditions
℃/
PF
Max.
Unit
V
0.70
V
℃
Reverse Breakdown Voltage
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
V
(BR) R
V
V
F2
F
I
V
F3
R
TSTG
-
65
to +175
I
R
=10μA
0.85
I
F
=10mA
0.9
0.92
℃
V
F1
0.715
V
I
F
FM1100-MH
FM1150-MH
FM1200-MH
UN
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH
=1mA
1.0
1.25
1
25
2
4
V
V
μA
nA
pF
ns
0.5
10
Vo
Forward
Average Reverse Current at @T A=25℃
Maximum
voltage
Rated DC Blocking Voltage
@T A=125℃
I
F
=50mA
I
F
=150mA
V
R
=75V
V
R
=20V
V
R
=0V,f=1MHz
I
F
=I
R
=10mA
Irr=0.1XI
R
,R
L
=100Ω
mA
V
F4
NOTES:
2- Thermal Resistance From Junction to Ambient
1- Measured
current
and applied reverse voltage of 4.0 VDC.
Reverse
at 1 MHZ
I
R1
I
R2
C
T
t
rr
Capacitance between terminals
Reverse Recovery Time
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOT-363 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
BAS16TW1T1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Typical Characteristics
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Vol
Vol
Vol
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃/W
PF
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
Vol
I
R
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOT-363 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
FM120-M
THRU
BAS16TW1T1
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
Outline Drawing
SOT-363
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
SOD-123H
Mechanical data
.087(2.20)
0.031(0.8) Typ.
.004(0.10)MIN.
.054(1.35)
.045(1.15)
•
Epoxy : UL94-V0 rated flame retardant
.071(1.80)
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum RMS Voltage
.030(0.75)
.021(0.55)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
.010(0.25)
18
10
.003(0.08)
80
100
56
80
70
100
.096(2.45)
.071(1.80)
115
150
105
150
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
120
200
140
200
Volt
.056(1.40)
Maximum Average Forward Rectified Current
.047(1.20)
Maximum DC Blocking Voltage
Volt
Volt
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Am
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
.004(0.10)MAX.
CHARACTERISTICS
40
120
-55 to +150
℃/W
PF
-
65
to +175
℃
℃
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
.043(1.10)
.032(0.80)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
V
F
I
R
.016(0.40)
@T A=125℃
.004(0.10)
0.50
0.70
0.5
10
0.85
0.9
0.92
Volt
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
WILLAS ELECTRONIC CORP.
Rev.D
2012-1
WILLAS ELECTRONIC CORP.
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