2N2857UB
Silicon NPN Transistor
Data Sheet
Description
Semicoa Semiconductors offers:
•
Screening and processing per MIL-PRF-19500
Appendix E
•
JAN level (2N2857UBJ)
•
JANTX level (2N2857UBJX)
•
JANTXV level (2N2857UBJV)
•
JANS level (2N2857UBJS)
•
QCI to the applicable level
•
100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
•
Radiation testing (total dose) upon request
Applications
•
Ultra-High frequency transistor
•
Low power
•
NPN silicon transistor
Features
•
•
•
•
Hermetically sealed Cersot ceramic
Also available in chip configuration
Chip geometry 0011
Reference document:
MIL-PRF-19500/343
Benefits
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
•
Qualification Levels: JAN, JANTX,
JANTXV and JANS
•
Radiation testing available
T
C
= 25°C unless otherwise specified
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current, Continuous
Power Dissipation, T
A
= 25
O
C
Derate linearly above 25
O
C
Power Dissipation, T
C
= 25
O
C
Derate linearly above 25
O
C
Operating Junction Temperature
Storage Temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
T
P
T
T
J
T
STG
Rating
15
30
3
40
200
1.14
300
1.71
-65 to +200
-65 to +200
Unit
Volts
Volts
Volts
mA
mW
mW/°C
mW
mW/°C
°C
°C
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com
2N2857UB
Silicon NPN Transistor
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at T
A
= 25°C
Off Characteristics
Parameter
Collector-Emitter Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
Emitter-Base Cutoff Current
Symbol
V
(BR)CEO
I
CBO1
I
CBO3
I
CBO2
I
CES
I
EBO1
Test Conditions
I
C
= 3 mA
V
CB
= 15 Volts
V
CB
= 30 Volts
V
CB
= 15 Volts, T
A
= 150°C
V
CE
= 16 Volts
V
EB
= 3 Volts
Min
15
10
1
1
100
10
Typ
Max
Units
Volts
nA
µA
µA
nA
µA
On Characteristics
Parameter
DC Current Gain
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Dynamic Characteristics
Parameter
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
Small Signal Short Circuit Forward
Current Transfer Ratio
Collector to Base Feedback
Capacitance
Collector Base time constant
Small Signal Power Gain
Noise Figure
Symbol
|h
FE
|
h
FE
C
CB
r
b
’C
C
G
pe
F
Test Conditions
V
CE
= 6 Volts, I
C
= 5 mA,
f = 100 MHz
V
CE
= 6 Volts, I
C
= 2 mA,
f = 1 kHz
V
CB
= 10 Volts, I
E
= 0 mA,
100 kHZ < f < 1 MHz
V
CB
= 6 Volts, I
E
= 2 mA,
f = 31.9 MHz
V
CE
= 6 Volts, I
E
= 1.5 mA,
f = 450 MHz
V
CE
= 6 Volts, I
C
= 1.5 mA,
f < 450 MHz, R
g
= 50
Ω
Symbol
h
FE1
h
FE2
V
BEsat
V
CEsat
Test Conditions
I
C
= 3 mA, V
CE
= 1 Volts
I
C
= 3 mA, V
CE
= 1 Volts
T
A
= -55°C
I
C
= 10 mA, I
B
= 1 mA
I
C
= 10 mA, I
B
= 1 mA
Pulse Test: Pulse Width = 300
µs,
Duty Cycle
≤
2.0%
Min
30
10
Typ
Max
150
Units
1.0
0.4
Volts
Volts
Min
10
50
Typ
Max
21
220
1
Units
pF
ps
MHz
dB
4
12.5
15
21
4.5
Copyright 2002
Rev. F
Semicoa Semiconductors, Inc.
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 2
www.SEMICOA.com
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