电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

UZXM64N035GTA

产品描述Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
产品类别分立半导体    晶体管   
文件大小62KB,共4页
制造商Zetex Semiconductors
官网地址http://www.zetex.com/
标准
下载文档 详细参数 选型对比 全文预览

UZXM64N035GTA概述

Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

UZXM64N035GTA规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Zetex Semiconductors
包装说明SOT-223, 4 PIN
Reach Compliance Codenot_compliant
ECCN代码EAR99
其他特性LOW THRESHOLD
外壳连接DRAIN
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压35 V
最大漏极电流 (ID)4.8 A
最大漏源导通电阻0.05 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
JESD-30 代码R-PDSO-G4
JESD-609代码e3
湿度敏感等级1
元件数量1
端子数量4
工作模式ENHANCEMENT MODE
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)260
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装YES
端子面层Matte Tin (Sn)
端子形式GULL WING
端子位置DUAL
处于峰值回流温度下的最长时间40
晶体管应用SWITCHING
晶体管元件材料SILICON

UZXM64N035GTA文档预览

ZXM64N035G
35V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
= 35V: R
DS(on)
= 0.050 : I
D
= 6.7A
DESCRIPTION
This new generation of high cell density planar MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
·
Low on-resistance
·
Fast switching speed
·
Low threshold
·
Low gate drive
·
SOT223 package
APPLICATIONS
·
50W Class D Audio Output Stage
·
Motor Control
ORDERING INFORMATION
DEVICE
ZXM64N035GTA
ZXM64N035GTC
REEL
SIZE
7”
13”
TAPE
WIDTH
12mm
12mm
QUANTITY
PER REEL
1000 units
4000 units
Top View
DEVICE MARKING
·
ZXM6
4N035
ISSUE 1 - JUNE 2004
1
ZXM64N035G
ABSOLUTE MAXIMUM RATING
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (V
GS
=10V;
(V
GS
=10V;
(V
GS
=10V;
Pulsed Drain Current
(c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
(c)
Power Dissipation at T
A
=25°C
Linear Derating Factor
(a)
(b)
SYMBOL
V
DSS
V
GS
T
A
=25°C)
(b)
T
A
=70°C)
(b)
T
A
=25°C)
(a)
I
D
LIMIT
35
20
6.7
5.4
4.8
30
2.4
30
2.0
16
3.9
31
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
Power Dissipation at T
A
=25°C
(b)
Linear Derating Factor
Operating and Storage Temperature Range
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
(a)
Junction to Ambient
(b)
SYMBOL
R
θJA
R
θJA
VALUE
62.5
32
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width limited by maximum junction temperature.
ISSUE 1 - JUNE 2004
2
ZXM64N035G
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
1.0
0.050
0.062
4.3
S
35
1
100
V
A
nA
V
I
D
=250µA, V
GS
=0V
V
DS
=35V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =250 A, V
DS
= V
GS
D
V
GS
=10V, I
D
=3.7A
V
GS
=4.5V, I
D
=1.9A
V
DS
=10V,I
D
=1.9A
SYMBOL
MIN.
TYP.
MAX.
UNIT CONDITIONS
Static Drain-Source On-State Resistance
(1)
R
DS(on)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
V
SD
t
rr
Q
rr
24.5
19.1
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
4.2
4.6
20.5
8
C
iss
C
oss
C
rss
950
200
50
g
fs
pF
pF
pF
V
DS
=25V, V
GS
=0V,
f=1MHz
ns
ns
ns
ns
27
5
4.5
nC
nC
nC
V
DS
=24V,V
GS
=10V,
I
D
=3.7A
V
DD
=15V, I
D
=3.7A
R
G
=6.0
,
V
GS
=10V
0.95
V
ns
nC
T
J
=25 C, I
S
=3.7A,
V
GS
=0V
T
J
=25 C, I
F
=3.7A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
3
ZXM64N035G
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
4.6
2.0 min
(3x)
2.3
6.8
1.5 min
(3x)
2.0 min
3.8 min
DIM
Millimeters
Min
A
B
C
D
E
F
G
H
K
L
M
6.3
3.3
-
0.6
2.9
0.24
Max
6.7
3.7
1.7
0.8
3.1
0.32
Inches
Min
0.248
0.130
-
0.024
0.114
0.009
Max
0.264
0.146
0.067
0.031
0.122
0.13
NOM 4.6
0.85
0.02
6.7
1.05
0.10
7.3
NOM 0.181
0.033
0.0008
0.264
0.041
0.004
0.287
NOM 2.3
NOM 0.0905
© Zetex Semiconductors plc 2004
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
europe.sales@zetex.com
Americas
Zetex Inc
700 Veterans Memorial Hwy
Hauppauge, NY 11788
USA
Telephone: (1) 631 360 2222
Fax: (1) 631 360 8222
usa.sales@zetex.com
Asia Pacific
Zetex (Asia) Ltd
3701-04 Metroplaza Tower 1
Hing Fong Road, Kwai Fong
Hong Kong
Telephone: (852) 26100 611
Fax: (852) 24250 494
asia.sales@zetex.com
Corporate Headquarters
Zetex plc
Lansdowne Road, Chadderton
Oldham, OL9 9TY
United Kingdom
Telephone (44) 161 622 4444
Fax: (44) 161 622 4446
hq@zetex.com
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced
for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company
reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
For the latest product information, log on to www.zetex.com
ISSUE 1 - JUNE 2004
4

UZXM64N035GTA相似产品对比

UZXM64N035GTA UZXM64N035GTC
描述 Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN Small Signal Field-Effect Transistor, 4.8A I(D), 35V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
是否Rohs认证 符合 符合
厂商名称 Zetex Semiconductors Zetex Semiconductors
包装说明 SOT-223, 4 PIN SOT-223, 4 PIN
Reach Compliance Code not_compliant not_compliant
ECCN代码 EAR99 EAR99
其他特性 LOW THRESHOLD LOW THRESHOLD
外壳连接 DRAIN DRAIN
配置 SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 35 V 35 V
最大漏极电流 (ID) 4.8 A 4.8 A
最大漏源导通电阻 0.05 Ω 0.05 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 代码 R-PDSO-G4 R-PDSO-G4
JESD-609代码 e3 e3
湿度敏感等级 1 1
元件数量 1 1
端子数量 4 4
工作模式 ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) 260 260
极性/信道类型 N-CHANNEL N-CHANNEL
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 Matte Tin (Sn) Matte Tin (Sn)
端子形式 GULL WING GULL WING
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 40 40
晶体管应用 SWITCHING SWITCHING
晶体管元件材料 SILICON SILICON
霍尼韦尔招聘资深DSP工程师-上海
大家好,我是霍尼韦尔公司招聘HR Ray。我们现正在招聘一名资深DSP工程师。有兴趣的同学,请将简历发送至ray.xiong@honeywell.com,我会尽快跟您联系,并介绍职位详情。谢谢。 要求 擅长Au ......
rayxiong 求职招聘
示波器的测量统计功能 及其在自动化测试中的应用
示波器的测量统计功能及其在自动化测试中的应用 一般示波器都是有自动测量功能的,比如频率,周期,最大值,最小值,峰峰值,平均值,占空比,正脉宽,负脉宽等等,是很常规的功能配置。 ......
LOTO2018 测试/测量
开关电源变压器设计总结
摘要: 项目 参数数据 输出电压1 Vo Vdc 12.00 输出电流8259(D8259A)(USED)1 Io A 1.50 输出功率1 Po1 W 18.00 项目 参数 数据 输出电压1 Vo Vdc 12.00 输出电流1 Io A 1.50 输 ......
笨笨尉 电源技术
【新手指南】博客帮助帖汇总
很多网友都有在论坛注册,活跃于论坛,也许有的网友对网站的博客还不是很熟悉, 在这里整理了博客帮助帖,方便大家开通博客及使用博客的功能,使大家的交流更加广泛! ......
小娜 为我们提建议&公告
声音信号采集问题请教
我的电路图见图,我是用LF412作为电压跟随器和信号放大处理后,再经过LM339把放大的模拟信号转换成数字信号1或者0,但是我用示波器测得T2信号不是高低电平,而是放大了的锯齿波,请大家帮忙看看 ......
gary_wxh 模拟电子
怎样去除 WINCE 5.0 启动音乐,关机音乐?
如题,就是让WincE除了能播放音乐外,其他一切操作都静音!...
edsonz117 嵌入式系统

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 455  1711  188  881  393  16  33  25  58  56 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved