ZXMN10A07Z
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=100V : R
DS(on)
=0.7 ; I
D
=1.4A
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage power management applications.
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
SOT89 package
SOT89
APPLICATIONS
•
DC-DC converters
•
Power management functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
ZXMN10A07ZTA
REEL
SIZE
7"
TAPE
WIDTH
12mm
QUANTITY
PER REEL
1000 units
PINOUT
DEVICE MARKING
•
7N10
(Top view)
ISSUE 6 - MAY 2004
1
SEMICONDUCTORS
ZXMN10A07Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-source voltage
Gate-source voltage
Continuous drain current @ V
GS
=10V; T
A
=25°C
(b)
@ V
GS
=10V; T
A
=70°C
(b)
@ V
GS
=10V; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation at T
A
=25°C
Linear derating factor
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
(a)
(c)
(b)
SYMBOL
V
DSS
V
GS
I
D
LIMIT
100
±20
1.4
UNIT
V
V
A
1.1
1.0
I
DM
I
S
I
SM
P
D
P
D
4.2
2.1
4.2
1.5
12
2.6
21
-55 to +150
A
A
A
W
mW/°C
W
mW/°C
°C
Power dissipation at T
A
=25°C
(b)
THERMAL RESISTANCE
PARAMETER
Junction to ambient
(a)
Junction to ambient
(b)
SYMBOL
R
JA
R
JA
VALUE
83.3
47.4
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a device surface mounted on FR4 PCB measured at t 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature.
Refer to Transient Thermal Impedance graph.
ISSUE 6 - MAY 2004
SEMICONDUCTORS
2
ZXMN10A07Z
CHARACTERISTICS
ISSUE 6 - MAY 2004
3
SEMICONDUCTORS
ZXMN10A07Z
ELECTRICAL CHARACTERISTICS
(at T
amb
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance
(1)
Forward transconductance
(1) (3)
DYNAMIC
(3)
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
SD
t
rr
100
1
100
2.0
0.7
0.9
1.6
V
A
nA
V
I
D
= 250 A, V
GS
=0V
V
DS
= 100V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I
D
= 250 A, V
DS
=V
GS
V
GS
= 10V, I
D
= 1.5A
V
GS
= 6V, I
D
= 1A
S
V
DS
= 15V, I
D
= 1A
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING
(2) (3)
138
12
6
pF
pF
pF
V
DS
= 50V, V
GS
=0V
f=1MHz
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate drain charge
SOURCE-DRAIN DIODE
Diode forward voltage
(1)
Reverse recovery time
(3)
Reverse recovery charge
(3)
1.8
1.5
4.1
2.1
2.9
0.7
1
ns
ns
ns
ns
nC
nC
nC
V
DS
= 50V, V
GS
= 10V
I
D
= 1A
T
j
=25°C, I
S
= 1.5A,
V
GS
=0V
T
j
=25°C, I
F
= 1A,
di/dt=100A/ s
V
DD
= 50V, I
D
= 1A
R
G
≅6.0
, V
GS
= 10V
0.85
27
12
0.95
V
ns
nC
Q
rr
NOTES
(1) Measured under pulsed conditions. Pulse width 300 s; duty cycle 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 6 - MAY 2004
SEMICONDUCTORS
4
ZXMN10A07Z
TYPICAL CHARACTERISTICS
ISSUE 6 - MAY 2004
5
SEMICONDUCTORS
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