Datasheet> 器件分类 > 分立半导体> 晶体管> IRF054SMDR4

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IRF054SMDR4: 产品描述45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN; 产品类别分立半导体晶体管; 文件大小23KB，共2页; 制造商SEMELAB; 标准

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IRF054SMDR4概述

45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN

IRF054SMDR4规格参数

参数名称	属性值
是否无铅	不含铅
是否Rohs认证	符合
厂商名称	SEMELAB
包装说明	CHIP CARRIER, R-CBCC-N3
针数	3
Reach Compliance Code	compliant
ECCN代码	EAR99
雪崩能效等级（Eas）	480 mJ
外壳连接	DRAIN
配置	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V
最大漏极电流 (ID)	45 A
最大漏源导通电阻	0.031 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3
JESD-609代码	e4
元件数量	1
端子数量	3
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR
封装形式	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED
极性/信道类型	N-CHANNEL
最大脉冲漏极电流 (IDM)	180 A
认证状态	Not Qualified
表面贴装	YES
端子面层	GOLD
端子形式	NO LEAD
端子位置	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED
晶体管元件材料	SILICON

IRF054SMDR4文档预览

LAB

MECHANICAL DATA

Dimensions in mm (inches)

SEME

IRF054SMD

N–CHANNEL

POWER MOSFET

3 .6 0 (0 .1 4 2 )

M a x .

0 .8 9

(0 .0 3 5 )

m in .

3 .7 0 (0 .1 4 6 )

3 .4 1 (0 .1 3 4 )

4 .1 4 (0 .1 6 3 )

3 .8 4 (0 .1 5 1 )

0 .7 6

(0 .0 3 0 )

m in .

DSS

D(cont)

DS(on)

FEATURES

60V

45A

0.027

1 0 .6 9 (0 .4 2 1 )

1 0 .3 9 (0 .4 0 9 )

1 6 .0 2 (0 .6 3 1 )

1 5 .7 3 (0 .6 1 9 )

• HERMETICALLY SEALED SURFACE

MOUNT PACKAGE

• SMALL FOOTPRINT – EFFICIENT USE OF

PCB SPACE.

9 .6

9 .3

1 1 .5

1 1 .2

7 (0

8 (0

.3 8

.3 6

.4 5

.4 4

1 )

9 )

6 )

4 )

0 .5 0 (0 .0 2 0 )

0 .2 6 (0 .0 1 0 )

• SIMPLE DRIVE REQUIREMENTS

• LIGHTWEIGHT

• HIGH PACKING DENSITIES

SMD1 PACKAGE

Pad 1 – Gate

Pad 2 – Drain

Pad 3 – Source

Note:

IRFNxxx also available with

pins 1 and 3 reversed.

ABSOLUTE MAXIMUM RATINGS

case

= 25°C unless otherwise stated)

dv/dt

, T

stg

J–PCB

Gate – Source Voltage

Continuous Drain Current

Pulsed Drain Current

Power Dissipation @ T

case

= 25°C

Linear Derating Factor

Single Pulse Avalanche Energy

Peak Diode Recovery

Operating and Storage Temperature Range

Package Mounting Surface Temperature (for 5 sec)

Thermal Resistance Junction to Case

Thermal Resistance Junction to PCB (Typical)

= 0 , T

case

= 25°C)

= 0 , T

case

= 100°C)

±20V

45A

28A

180A

100W

0.8W/°C

480mJ

4.5V/ns

–55 to 150°C

300°C

1.25°C/W

3°C/W

Notes

1) Pulse Test: Pulse Width

300ms,

d £

2) @ V

= 25V , L

0.3mH , R

= 25

, Peak I

= 45A , Starting T

= 25°C

3) @ I

45A , di/dt

200A/

s , V

DSS

, T

125°C , SUGGESTED R

= 2.35

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim. 7/00

LAB

ELECTRICAL CHARACTERISTICS

(Tamb = 25°C unless otherwise stated)

Parameter

DSS

STATIC ELECTRICAL RATINGS

Drain – Source Breakdown Voltage

SEME

IRF054SMD

Test Conditions

= 0

= 1mA

= 10V

= V

15V

= 0

= 20V

= –20V

= 0

= 25V

f = 1MHz

= 10V

= 0.5BV

DSS

= 45A

= 0.5BV

DSS

= 30V

= 45A

= 2.35

= 45A

= 28A

= 45A

= 250

= 28A

= 0.8BV

DSS

= 125°C

= 1mA

Min.

Typ.

Max.

Unit

DSS

Temperature Coefficient of

Breakdown Voltage

DS(on)

Static Drain – Source On–State

Resistance

Forward Transconductance

Zero Gate Voltage Drain Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Reference to 25°C

0.68

0.027

0.031

250

100

–100

4600

2000

340

180

105

180

100

180

V / °C

)

(

GS(th)

Gate Threshold Voltage

DSS

GSS

iss

oss

rss

d(on)

d(off)

SOURCE – DRAIN DIODE CHARACTERISTICS

Continuous Source Current

Pulse Source Current

Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn–On Time

PACKAGE CHARACTERISTICS

Internal Drain Inductance

(from centre of drain pad to die)

Internal Source Inductance

(from centre of source pad to end of source bond wire)

= 45A

= 0

= 45A

= 25°C

Negligible

0.8

2.8

/ d

100A/

s V

50V

= 25°C

2.5

280

2.2

Notes

1) Pulse Test: Pulse Width

300ms,

d £

2) Repetitive Rating – Pulse width limited by maximum junction temperature.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Prelim. 7/00

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IRF054SMDR4相似产品对比

	IRF054SMDR4	IRF054SMD-JQR-BR4	IRF054SMD-JQR-B
描述	45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN	45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN	45A, 60V, 0.031ohm, N-CHANNEL, Si, POWER, MOSFET, HERMETIC SEALED, SMD1, 3 PIN
是否无铅	不含铅	不含铅	含铅
是否Rohs认证	符合	符合	不符合
厂商名称	SEMELAB	SEMELAB	SEMELAB
包装说明	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
针数	3	3	3
Reach Compliance Code	compliant	compliant	compliant
ECCN代码	EAR99	EAR99	EAR99
雪崩能效等级（Eas）	480 mJ	480 mJ	480 mJ
外壳连接	DRAIN	DRAIN	DRAIN
配置	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压	60 V	60 V	60 V
最大漏极电流 (ID)	45 A	45 A	45 A
最大漏源导通电阻	0.031 Ω	0.031 Ω	0.031 Ω
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
元件数量	1	1	1
端子数量	3	3	3
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C
封装主体材料	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
峰值回流温度（摄氏度）	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大脉冲漏极电流 (IDM)	180 A	180 A	180 A
认证状态	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	YES	YES
端子形式	NO LEAD	NO LEAD	NO LEAD
端子位置	BOTTOM	BOTTOM	BOTTOM
处于峰值回流温度下的最长时间	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
晶体管元件材料	SILICON	SILICON	SILICON
JESD-609代码	e4	e4	-
端子面层	GOLD	GOLD	-

IRF054SMDR4

IRF054SMDR4概述

IRF054SMDR4规格参数

IRF054SMDR4文档预览

IRF054SMDR4相似产品对比

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