Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226
参数名称 | 属性值 |
是否Rohs认证 | 符合 |
厂商名称 | Fairchild |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | compliant |
ECCN代码 | EAR99 |
最大集电极电流 (IC) | 1.5 A |
集电极-发射极最大电压 | 30 V |
配置 | SINGLE |
最小直流电流增益 (hFE) | 50 |
JEDEC-95代码 | TO-226 |
JESD-30 代码 | O-PBCY-T3 |
JESD-609代码 | e1 |
元件数量 | 1 |
端子数量 | 3 |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | PNP |
最大功率耗散 (Abs) | 1 W |
认证状态 | Not Qualified |
表面贴装 | NO |
端子面层 | Tin/Silver/Copper (Sn/Ag/Cu) |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
TN6726AD26Z | TN6726A_D27Z | TN6726AJ18Z | NZT6726D84Z | TN6726AD27Z | TN6726AD75Z | TN6726AJ05Z | |
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描述 | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226 | trans GP pnp 30v 1.5A TO-226 | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226, 3 PIN | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226, | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226 | Small Signal Bipolar Transistor, 1.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-226, 3 PIN |
厂商名称 | Fairchild | - | - | Fairchild | Fairchild | Fairchild | Fairchild |
包装说明 | CYLINDRICAL, O-PBCY-T3 | - | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G4 | - | CYLINDRICAL, O-PBCY-T3 | TO-226, 3 PIN |
Reach Compliance Code | compliant | - | unknown | unknown | compliant | unknown | compliant |
ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
最大集电极电流 (IC) | 1.5 A | - | 1.5 A | 1.5 A | 1.5 A | 1.5 A | 1.5 A |
集电极-发射极最大电压 | 30 V | - | 30 V | 30 V | 30 V | 30 V | 30 V |
配置 | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
最小直流电流增益 (hFE) | 50 | - | 50 | 50 | 50 | 50 | 50 |
JESD-30 代码 | O-PBCY-T3 | - | O-PBCY-T3 | R-PDSO-G4 | O-PBCY-T3 | O-PBCY-T3 | O-PBCY-T3 |
元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 |
端子数量 | 3 | - | 3 | 4 | 3 | 3 | 3 |
最高工作温度 | 150 °C | - | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | - | ROUND | RECTANGULAR | ROUND | ROUND | ROUND |
封装形式 | CYLINDRICAL | - | CYLINDRICAL | SMALL OUTLINE | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
极性/信道类型 | PNP | - | PNP | PNP | PNP | PNP | PNP |
最大功率耗散 (Abs) | 1 W | - | - | 1 W | 1 W | 1 W | 1 W |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
表面贴装 | NO | - | NO | YES | NO | NO | NO |
端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | GULL WING | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
端子位置 | BOTTOM | - | BOTTOM | DUAL | BOTTOM | BOTTOM | BOTTOM |
晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
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