电子工程世界电子工程世界电子工程世界

关键词

搜索

型号

搜索

THSMCJ1018CE3

产品描述Silicon Surge Protector, 300V V(BO) Max, 50A
产品类别模拟混合信号IC    触发装置   
文件大小273KB,共3页
制造商Microsemi
官网地址https://www.microsemi.com
标准
下载文档 详细参数 选型对比 全文预览

THSMCJ1018CE3概述

Silicon Surge Protector, 300V V(BO) Max, 50A

THSMCJ1018CE3规格参数

参数名称属性值
是否Rohs认证符合
厂商名称Microsemi
包装说明SMALL OUTLINE, R-PDSO-C2
Reach Compliance Codeunknown
最大转折电压300 V
配置SINGLE
最大断态直流电压180 V
JESD-30 代码R-PDSO-C2
JESD-609代码e3
通态非重复峰值电流50 A
元件数量1
端子数量2
封装主体材料PLASTIC/EPOXY
封装形状RECTANGULAR
封装形式SMALL OUTLINE
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
表面贴装YES
端子面层MATTE TIN
端子形式C BEND
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
触发设备类型SILICON SURGE PROTECTOR

THSMCJ1018CE3文档预览

8700 E. Thomas Road
Scottsdale, AZ 85252
Tel: (480) 941-6300
Fax: (480) 947-1503
THSMCJ1018C
and
THSMCJ1022C
Bi-Directional
100 AMP
Thyristor Surge
Protective Devices
(TSPD)
MECHANICAL
CHARACTERISTICS
FEATURES
Bidirectional Transient Voltage Protection
Initial Breakdown Voltage of 220 to 275 volts
Positive Resistance Breakover Voltages of 300 to 350 volts maximum
Clamping speeds of nanoseconds
High Off-State Impedance (low leakage) and low on-state voltage (crowbar action)
Encapsulating material meets UL94V-O requirements
MAXIMUM RATINGS
Operating Temperatures: -40
0
C to +150
0
C
0
0
Storage Temperature: -65 C to +150 C
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for V
DRM
Non-Repetitive Peak Impulse Current (I
PP
): 100A @ 10/560µs or 250 A @ 8/20µs (see
Note 1 for derating)
Non-Repetitive Peak On-State Current (I
TSM
): @ 8.3 ms (one-half cycle); 50 Amps (see
Figure 5 and Note 1 for derating)
MECHANICAL
Soldering temperature 260ºC (10 sec maximum)
Weight: .525 grams(approximate)
Marked with logo and marking code
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500 pieces
A
Breakover
Voltage
(see note 1)
V
(BO)
Volts
MAX
300
350
On-State
Voltage
@I
T
= 1A
(pulsed)
V
T
Volts
MAX
3.5
3.5
I
H
mA
MIN
150
150
I
H
mA
MAX
750
750
Co
Co
@ 0v @ 50v
pF
pF
MAX MAX
200
200
100
100
PACKAGING
DIMENSIONS
INCH
MIN
MAX
.238
.243
.238
.322
.207
.056
MM
MIN
4.20
6.08
5.95
7.85
5.12
1.20
MAX
6.05
6.18
6.05
8.18
5.25
1.42
Electrical Characteristics @ 25ºC
Rated Peak
Pulse Current
100Amps @
10/1000 µs
(see note 1)
Product
Marking
Rated
Repetitive
Off-State
Voltage
V
DRM
Volts
MAX
THSMCJ1018C
THSMCJ1022C
TH1018C
TH1022C
180
220
Off-State
Leakage
Current
@V
DRM
I
DRM
µA
MAX
5
5
Breakdown
Voltage
@I
(BR)
= 1mA
(see note 2)
V
(BR)
Volts
MIN
220
275
Holding
Current
Capacitance
(1 MHz)
.165
.239
.234
.309
.202
.047
B
C
D
E
F
G
Part Number
Marking
.010 TYP
.25 TYP
PAD DIMENSIONS
Surge Rating
Ipp
8x20µs
Amps
250
Ipp
10x160µs
Amps
150
Ipp
10x560µs
Amps
100
NOTES:
1.
2.
Above 70ºC, derate linearly to zero @ 150ºC lead temperature.
Breakdown voltage V
(BR)
has a positive temperature coefficient of + 0.1%/ºC.
INCHES
MSC1370.PDF
ISO 9001 CERTIFIED
Page 1 of 3
REV F 12/22/99
THSMCJ1018C and THSMCJ1022C
Figure 1
Pulse Wave Form
(10/1000µs)
t
r
%I
PP
– Peak Pulse Current
100
90
Peak Value I
PP
Half Value I
PP
at
2 t
d
50
10/1000µs Waveform
t
r
= 10µsec
t
d
= 1000µsec
Figure 2
Pulse Wave Form
(8/20µs)
t
r
100
90
Peak Value I
PP
Half Value I
PP
at
2 t
d
50
8/20µs
Waveform
10
0
0
10
20
30
40
50
60
t
r
= 8µsec
t
d
= 20µsec
10
0
0
1
2
3
4
5
6
t = Time in ms
%IPP – Peak Pulse Current
t = Time in µs
Figure 3
Typical normalized dc Holding Current
vs. Case Temperature
2
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40
-20
-0
20
40
60
80
100
120
140
160
Ratio of
I
H(TC = 25ºC)
I
H
Case Temperature (T
C
) in ºC
MSC1370.PDF
ISO 9001 CERTIFIED
Page 2 of 3
REV F 12/22/99
THSMCJ1018C and THSMCJ1022C
Figure 4
Normalized Off-State Current
vs. Junction Temperature
20
0
10
0
Off-State
Current (I
DRM
) Multiplier
80
60
40
30
20
10
8
5
4
3
2
20 30 40 50 60
70 80 90 100
120
140
160
Junction Temperature (T
J
) in ºC
Figure 5
Peak Surge On-State Current vs.
Number of Full Cycles at T
C
= 25ºC
Peak Surge (Non-Repetitive)
On-State Current (I
TSM
) in Amps
100
80
50
40
30
20
10
8
5
4
3
2
1
SUPPLY FREQUENCY: 60 Hz Sinusoidal
LOAD: Resistive
PEAK SURGE ON-STATE CURRENT (ITSM)
Max. Rated Value at Specified Case Temperature
NOTE: Overload may not be repeated until
junction temperature has returned to Steady-State
rated value
100A
1
2
3 4 5
10
20 30 40 50
100
200 300
1000
Number of Surge Cycles – Full Cycles
MSC1370.PDF
ISO 9001 CERTIFIED
Page 3 of 3
REV F 12/22/99

THSMCJ1018CE3相似产品对比

THSMCJ1018CE3 THSMCJ1022CE3
描述 Silicon Surge Protector, 300V V(BO) Max, 50A Silicon Surge Protector, 350V V(BO) Max, 50A
是否Rohs认证 符合 符合
厂商名称 Microsemi Microsemi
包装说明 SMALL OUTLINE, R-PDSO-C2 SMALL OUTLINE, R-PDSO-C2
Reach Compliance Code unknown unknown
最大转折电压 300 V 350 V
配置 SINGLE SINGLE
最大断态直流电压 180 V 220 V
JESD-30 代码 R-PDSO-C2 R-PDSO-C2
JESD-609代码 e3 e3
通态非重复峰值电流 50 A 50 A
元件数量 1 1
端子数量 2 2
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE SMALL OUTLINE
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified
表面贴装 YES YES
端子面层 MATTE TIN MATTE TIN
端子形式 C BEND C BEND
端子位置 DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
触发设备类型 SILICON SURGE PROTECTOR SILICON SURGE PROTECTOR

 
EEWorld订阅号

 
EEWorld服务号

 
汽车开发圈

 
机器人开发圈

About Us 关于我们 客户服务 联系方式 器件索引 网站地图 最新更新 手机版

站点相关: 大学堂 TI培训 Datasheet 电子工程 索引文件: 2748  2120  2413  1410  1260  56  43  49  29  26 

器件索引   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

北京市海淀区中关村大街18号B座15层1530室 电话:(010)82350740 邮编:100190

电子工程世界版权所有 京B2-20211791 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号 Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved