8700 E. Thomas Road
Scottsdale, AZ 85252
Tel: (480) 941-6300
Fax: (480) 947-1503
TSMBJ1005C
thru
TSMBJ1024CB
Bi-directional
100 AMP
Thyristor Surge
Protective Devices
(TSPD)
MECHANICAL
CHARACTERISTICS
CASE STYLE: SMBJ (DO-214AA)
CASE STYLE: SMBG (DO-
215AA)
SMBJ
SMBG
FEATURES
•
•
•
•
•
•
•
•
Bidirectional Transient Voltage Protection
Surge capabilities up to 100 Amps @ 10/1000 µs or 300 Amps @8/20 µs (note 2,5)
Initial Breakdown Voltage from 60 to 300 volts
Positive Resistance Breakover Voltages from 100 to 400 volts
Clamping speeds of Nanoseconds and Oxide-Glass Passivated Junctions
High Off-State Impedance (low leakage) and low on-state voltage (crowbar action)
Encapsulating material meets UL 94VO requirements
UL RECOGNIZED: Qualified to UL 497B File No. E152273
•
•
•
•
•
•
•
Bellcore 1089 compliant add "B" suffix (TSMBJ1005CB - TSMBJ1024CB)
0
0
MAXIMUM RATINGS
Operating Temperatures: -40 C to +150 C
0
0
Storage Temperature: -65 C to +150 C
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for V
DRM
Non-Repetitive Peak Impulse Current (I
PP
): 100 A @ 10/1000 µs or 300 A @ 8/20 µs
Option: Bellcore 1089 compliant (I
PP
= 312.5 A @ 8/20 µs)
Non-Repetitive Peak On-State Current (I
TSM
): @ 8.3 ms (one-half cycle); 60 Amps
MECHANICAL
•
•
•
Lead solder temperature (10 sec duration) 260ºC
Weight: 1.5 grams(approximate)
Marked with logo and marking code
PACKAGING
•
•
Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces
INCHES
MIN/MAX
A
B
C
Breakover
Voltage
On-State
Voltage
@I
T
= 1 A
(pulsed)
V
T
VOLTS
MAX
3.5
3.5
3.5
3.5
3.5
3.5
I
H
mA
MIN
150
150
150
150
150
150
I
H
mA
MAX
750
750
750
750
750
750
Co
@ 0v
pF
MAX
200
200
200
200
200
200
Co
@ 50v
pF
MAX
100
100
100
100
100
100
D
Holding
Current
Capacitance
(1 MHz)
E
F
G
H
.077/.083
.160/.180
.130/1.55
.205/.220
.075/.095
.235/.255
.015/.030
.030/.060
MILLIMETERS
MIN/MAX
1.96/2.10
4.06/4.57
3.30/3.94
5.21/5.59
1.91/2.41
5.97/6.48
0.38/0.76
0.76/1.52
Electrical Characteristics @ 25ºC
Rated Peak
Pulse Current
100 Amps @
10/1000 µs
Part Number
Rated
Repetitive
Product
Off-State
Marking
Voltage
(see note 3)
Marking
V
DRM
VOLTS
MAX
50
60
160
180
220
240
Off-State
Leakage
Current
@ V
DRM
I
DRM
µA
MAX
5
5
5
5
5
5
Breakdown
Voltage
@I
(BR)
=1 mA
(see note 3) (see note 1)
V
(BR)
VOLTS
MIN
60
70
190
220
275
300
V
(BO)
VOLTS
MAX
100
110
265
300
350
400
LEAD FINISH:
Solder Dip or Lead Tin Plate
POLARITY: Bi-directional
TSMBJ1005C
TSMBJ1006C
TSMBJ1016C
TSMBJ1018C
TSMBJ1022C
TSMBJ1024C
T1005C
T1006C
T1016C
T1018C
T1022C
T1024C
NOTES:
1.
2.
3.
4.
For rise times less than 1 kV/ms. For very fast times up to 1 kV/
µ
s, V
(BO)
will be 110% of V
(BO)
Max., The I
(BO)
is 750 mA.
Critical rate of rise of On-State current is 100 A/
µ
s Max.
Maximum rate of rise of Off-State voltage V
DRM
that will not trigger device is 5 kV/
µ
s (T
J
= 70ºC).
Breakdown voltage V
(BR)
has a positive temperature coefficient of + 0.1 %/ºC.
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