SMG2301
-2.6A, -20V,R
DS(ON)
130m
Ω
Elektronische Bauelemente
P-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
A suffix of "-C" specifies halogen & RoHS compliant
A
SC-59
Dim
A
Min
2.70
1.40
1.00
0.35
1.70
0.00
0.10
0.20
0.85
2.40
Max
3.10
1.60
1.30
0.50
2.10
0.10
0.26
0.60
1.15
2.80
Description
The SMG2301 is universally preferred for all commercial
industrial surface mount application and suited for low
S
2
L
3
Top View
B
1
B
C
D
voltage applications such as DC/DC converters.
D
G
G
H
C
J
K
Features
* Super high dense cell design for extremely low R
DS(ON)
* Reliable and rugged
H
Drain
Gate
Source
J
K
L
S
Applications
* Power Management in Notebook Computer
* Protable Equipment
* Battery Powered System
D
All Dimension in mm
G
Marking : 2301
S
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
3
Continuous Drain Current
3
Pulsed Drain Current
Total Power Dissipation
Linear Derating Factor
Operating Junction and Storage Temperature Range
Tj, Tstg
Symbol
V
DS
V
GS
I
D
@T
A
=25
C
I
D
@T
A
=70
o
C
I
DM
P
D
@T
A
=25
o
C
o
Ratings
-20
±12
-2.6
-2.1
-10
1.38
0.01
-55~+150
Unit
V
V
A
A
A
W
W/ C
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
3
Symbol
Rthj-a
Ratings
90
Unit
o
C /W
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SMG2301
Elektronische Bauelemente
-2.6A, -20V,R
DS(ON)
130m
Ω
P-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25
o
C
)
Drain-Source Leakage Current (Tj=70
C
)
Static Drain-Source On-Resistance
2
o
o
Symbol
BV
DSS
BV
DS
/ Tj
V
GS(th)
I
GSS
I
DSS
Min.
-20
_
Typ.
_
Max.
_
_
Unit
V
V/ C
V
nA
uA
uA
o
Test Condition
V
GS
=0V, I
D
=-250uA
Reference to 25 C ,I
D
=-1mA
V
DS
=V
GS,
I
D
=-250uA
V
GS
=
±
12V
V
DS
=-20V,V
GS
=0
V
DS
=-16V,V
GS
=0
V
GS
=-5.0V, I
D
=-2.8A
V
GS
=-2.8V, I
D
=-2A
o
-0.1
_
_
_
_
_
_
-0.5
_
_
_
_
_
±
100
-1
-10
130
190
10
_
_
R
DS(ON)
Qg
Qgs
Qgd
Td
(ON)
Tr
Td
(Off)
Tf
Ciss
Coss
Crss
Gfs
_
_
_
_
_
_
_
_
_
_
_
m
Ω
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Transconductance
2
5.2
1.36
0.6
5.2
9.7
19
29
295
170
65
4.4
nC
I
D
=-2.8A
V
DS
=-6.0V
V
GS
=-5.0V
_
_
_
_
V
DS
=-15V
I
D
=-1A
nS
V
GS
=-10V
R
G
=6
Ω
R
D
=15
Ω
_
_
_
pF
V
GS
=0V
V
DS
=-6V
f=1.0MHz
_
_
S
V
DS
=-5V, I
D
=-2.8A
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
V
SD
Is
I
SM
Min.
_
_
Typ.
_
_
Max.
-1.2
-1
Unit
V
Test Condition
I
S
=-1.6A, V
GS
=0V.
V
D
=V
G
=0V, V
S
=-1.2V
G
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
A
_
_
-10
A
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width
≦
300us, dutycycle
≦
2%.
3.Surface mounted on 1 inch
2
copper pad of FR4 board; 270
°C/W
when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
4
SMG2301
Elektronische Bauelemente
Ω
-2.6A, -20V,R
DS(ON)
130m
P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
3
of
4
SMG2301
Elektronische Bauelemente
-2.6A, -20V,R
DS(ON)
130m
Ω
P-Channel Enhancement Mode Power Mos.FET
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
4
of
4
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