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GS81302T09GE-300IT

产品描述DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
产品类别存储    存储   
文件大小1MB,共35页
制造商GSI Technology
官网地址http://www.gsitechnology.com/
标准
下载文档 详细参数 全文预览

GS81302T09GE-300IT概述

DDR SRAM, 16MX9, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165

GS81302T09GE-300IT规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
厂商名称GSI Technology
零件包装代码BGA
包装说明FPBGA-165
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间0.45 ns
其他特性PIPELINED ARCHITECTURE
JESD-30 代码R-PBGA-B165
JESD-609代码e1
长度17 mm
内存密度150994944 bit
内存集成电路类型DDR SRAM
内存宽度9
湿度敏感等级3
功能数量1
端子数量165
字数16777216 words
字数代码16000000
工作模式SYNCHRONOUS
最高工作温度85 °C
最低工作温度-40 °C
组织16MX9
封装主体材料PLASTIC/EPOXY
封装代码LBGA
封装形状RECTANGULAR
封装形式GRID ARRAY, LOW PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)260
认证状态Not Qualified
座面最大高度1.5 mm
最大供电电压 (Vsup)1.9 V
最小供电电压 (Vsup)1.7 V
标称供电电压 (Vsup)1.8 V
表面贴装YES
技术CMOS
温度等级INDUSTRIAL
端子面层Tin/Silver/Copper (Sn/Ag/Cu)
端子形式BALL
端子节距1 mm
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度15 mm

文档预览

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GS81302T08/09/18/36E-375/350/333/300/250
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• Simultaneous Read and Write SigmaDDR™ Interface
• Common I/O bus
• JEDEC-standard pinout and package
• Double Data Rate interface
• Byte Write (x36 and x18) and Nybble Write (x8) function
• Burst of 2 Read and Write
• 1.8 V +100/–100 mV core power supply
• 1.5 V or 1.8 V HSTL Interface
• Pipelined read operation with self-timed Late Write
• Fully coherent read and write pipelines
• ZQ pin for programmable output drive strength
• IEEE 1149.1 JTAG-compliant Boundary Scan
• Pin-compatible with present 9Mb, 18Mb, 36Mb and 72Mb
devices
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package
• RoHS-compliant 165-bump BGA package available
144Mb SigmaDDR
TM
-II
Burst of 2 SRAM
375 MHz–250 MHz
1.8 V V
DD
1.8 V and 1.5 V I/O
inputs, not differential inputs to a single differential clock input
buffer. The device also allows the user to manipulate the
output register clock inputs quasi independently with the C and
C clock inputs. C and C are also independent single-ended
clock inputs, not differential inputs. If the C clocks are tied
high, the K clocks are routed internally to fire the output
registers instead.
Each internal read and write operation in a SigmaDDR-II B2
RAM is two times wider than the device I/O bus. An input data
bus de-multiplexer is used to accumulate incoming data before
it is simultaneously written to the memory array. An output
data multiplexer is used to capture the data produced from a
single memory array read and then route it to the appropriate
output drivers as needed.
When a new address is loaded into a x18 or x36 version of the
part, A0 is used to initialize the pointers that control the data
multiplexer / de-multiplexer so the RAM can perform "critical
word first" operations. From an external address point of view,
regardless of the starting point, the data transfers always follow
the same sequence {0, 1} or {1, 0} (where the digits shown
represent A0).
Unlike the x18 and x36 versions, the input and output data
multiplexers of the x8 and x9 versions are not preset by
address inputs and therefore do not allow "critical word first"
operations. The address fields of the x8 and x9 SigmaDDR-II
B2 RAMs are one address pin less than the advertised index
depth (e.g., the 16M x 8 has an 8M addressable index, and A0
is not an accessible address pin).
SigmaDDR™ Family Overview
The GS81302T08/09/18/36E are built in compliance with the
SigmaDDR-II SRAM pinout standard for Common I/O
synchronous SRAMs. They are 150,994,944-bit (144Mb)
SRAMs. The GS81302T08/09/18/36E SigmaDDR-II SRAMs
are just one element in a family of low power, low voltage
HSTL I/O SRAMs designed to operate at the speeds needed to
implement economical high performance networking systems.
Clocking and Addressing Schemes
The GS81302T08/09/18/36E SigmaDDR-II SRAMs are
synchronous devices. They employ two input register clock
inputs, K and K. K and K are independent single-ended clock
Parameter Synopsis
-375
tKHKH
tKHQV
2.66 ns
0.45 ns
-350
2.86 ns
0.45 ns
-333
3.0 ns
0.45 ns
-300
3.3 ns
0.45 ns
-250
4.0 ns
0.45 ns
Rev: 1.03b 12/2011
1/35
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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