Datasheet> 器件分类 > 分立半导体> 晶体管> RN1442-B

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RN1442-B: 产品描述TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal; 产品类别分立半导体晶体管; 文件大小702KB，共9页; 制造商Toshiba(东芝); 官网地址http://toshiba-semicon-storage.com/

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RN1442-B概述

TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal

RN1442-B规格参数

参数名称	属性值
厂商名称	Toshiba(东芝)
零件包装代码	SOT-23
包装说明	SMALL OUTLINE, R-PDSO-G3
针数	3
Reach Compliance Code	unknown
ECCN代码	EAR99
最大集电极电流 (IC)	0.3 A
集电极-发射极最大电压	20 V
配置	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	350
JESD-30 代码	R-PDSO-G3
JESD-609代码	e0
元件数量	1
端子数量	3
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.2 W
认证状态	Not Qualified
表面贴装	YES
端子面层	TIN LEAD
端子形式	GULL WING
端子位置	DUAL
晶体管应用	SWITCHING
晶体管元件材料	SILICON
标称过渡频率 (fT)	30 MHz
VCEsat-Max	0.1 V

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RN1441∼RN1444

TOSHIBA Transistor

Silicon NPN Epitaxial Type (PCT Process)

RN1441, RN1442, RN1443, RN1444

Muting and Switching Applications

High emitter-base voltage: V

EBO

= 25V (min)

High reverse h

: reverse h

= 150 (typ.) (V

−2V,

−4mA)

Low on resistance: R

= 1Ω (typ.) (I

= 5mA)

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Unit: mm

Equivalent Circuit

JEDEC

TO-236MOD

JEITA

SC-59

TOSHIBA

2-3F1A

Weight: 0.012g (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Symbol

CBO

CEO

EBO

stg

Rating

300

200

150

−55

to 150

Unit

°C

Type No.

RN1441

RN1442

RN1443

RN1444

Marking

classification

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test

report and estimated failure rate, etc).

Start of commercial production

1987-07

2014-03-01

RN1442-B相似产品对比

	RN1442-B	RN1442ATE85LF	RN1444ATE85LF	RN1441ATE85LF	RN1442-A	RN1443-B	RN1443-A
描述	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	transistor npn S-mini	transistor npn S-mini	transistor npn S-mini	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 300 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, SC-59, TO-236MOD, 3 PIN, BIP General Purpose Small Signal
零件包装代码	SOT-23	-	-	-	SOT-23	SOT-23	SOT-23
包装说明	SMALL OUTLINE, R-PDSO-G3	-	-	-	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
针数	3	-	-	-	3	3	3
Reach Compliance Code	unknown	-	-	-	unknown	unknown	unknown
ECCN代码	EAR99	-	-	-	EAR99	EAR99	EAR99
最大集电极电流 (IC)	0.3 A	-	-	-	0.3 A	0.3 A	0.3 A
集电极-发射极最大电压	20 V	-	-	-	20 V	20 V	20 V
配置	SINGLE WITH BUILT-IN RESISTOR	-	-	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE)	350	-	-	-	200	350	200
JESD-30 代码	R-PDSO-G3	-	-	-	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609代码	e0	-	-	-	e0	e0	e0
元件数量	1	-	-	-	1	1	1
端子数量	3	-	-	-	3	3	3
最高工作温度	150 °C	-	-	-	150 °C	150 °C	150 °C
封装主体材料	PLASTIC/EPOXY	-	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	-	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	-	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
极性/信道类型	NPN	-	-	-	NPN	NPN	NPN
最大功率耗散 (Abs)	0.2 W	-	-	-	0.2 W	0.2 W	0.2 W
认证状态	Not Qualified	-	-	-	Not Qualified	Not Qualified	Not Qualified
表面贴装	YES	-	-	-	YES	YES	YES
端子面层	TIN LEAD	-	-	-	TIN LEAD	TIN LEAD	TIN LEAD
端子形式	GULL WING	-	-	-	GULL WING	GULL WING	GULL WING
端子位置	DUAL	-	-	-	DUAL	DUAL	DUAL
晶体管应用	SWITCHING	-	-	-	SWITCHING	SWITCHING	SWITCHING
晶体管元件材料	SILICON	-	-	-	SILICON	SILICON	SILICON
标称过渡频率 (fT)	30 MHz	-	-	-	30 MHz	30 MHz	30 MHz
VCEsat-Max	0.1 V	-	-	-	0.1 V	0.1 V	0.1 V

RN1442-B

RN1442-B概述

RN1442-B规格参数

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