IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97-1, DIP-8, Programmable ROM
参数名称 | 属性值 |
厂商名称 | NXP(恩智浦) |
零件包装代码 | DIP |
包装说明 | DIP, |
针数 | 8 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
其他特性 | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE |
最大时钟频率 (fCLK) | 0.1 MHz |
数据保留时间-最小值 | 40 |
JESD-30 代码 | R-PDIP-T8 |
长度 | 9.5 mm |
内存密度 | 4096 bit |
内存集成电路类型 | EEPROM |
内存宽度 | 8 |
功能数量 | 1 |
端子数量 | 8 |
字数 | 512 words |
字数代码 | 512 |
工作模式 | SYNCHRONOUS |
最高工作温度 | 70 °C |
最低工作温度 | -25 °C |
组织 | 512X8 |
输出特性 | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY |
封装代码 | DIP |
封装形状 | RECTANGULAR |
封装形式 | IN-LINE |
并行/串行 | SERIAL |
认证状态 | Not Qualified |
座面最大高度 | 4.2 mm |
串行总线类型 | I2C |
最大供电电压 (Vsup) | 6 V |
最小供电电压 (Vsup) | 3 V |
标称供电电压 (Vsup) | 5 V |
表面贴装 | NO |
技术 | CMOS |
温度等级 | OTHER |
端子形式 | THROUGH-HOLE |
端子节距 | 2.54 mm |
端子位置 | DUAL |
宽度 | 7.62 mm |
最长写入周期时间 (tWC) | 10 ms |
PCD8594D-2P | PCA8594F-2T | PCF8594E-2P | PCF8594E-2T | PCA8594F-2P | |
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描述 | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97-1, DIP-8, Programmable ROM | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, SOT-96-1, SOP-8, Programmable ROM | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97-1, DIP-8, Programmable ROM | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8, 3.90 MM, PLASTIC, SOT-96-1, SOP-8, Programmable ROM | IC 512 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8, 0.300 INCH, PLASTIC, SOT-97-1, DIP-8, Programmable ROM |
零件包装代码 | DIP | SOIC | DIP | SOIC | DIP |
包装说明 | DIP, | SOP, | DIP, | SOP, | DIP, |
针数 | 8 | 8 | 8 | 8 | 8 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
其他特性 | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE | DATA RETENTION = 40 YEARS; WIRE I2C INTERFACE |
最大时钟频率 (fCLK) | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz | 0.1 MHz |
数据保留时间-最小值 | 40 | 40 | 40 | 40 | 40 |
JESD-30 代码 | R-PDIP-T8 | R-PDSO-G8 | R-PDIP-T8 | R-PDSO-G8 | R-PDIP-T8 |
长度 | 9.5 mm | 4.9 mm | 9.5 mm | 4.9 mm | 9.5 mm |
内存密度 | 4096 bit | 4096 bit | 4096 bit | 4096 bit | 4096 bit |
内存集成电路类型 | EEPROM | EEPROM | EEPROM | EEPROM | EEPROM |
内存宽度 | 8 | 8 | 8 | 8 | 8 |
功能数量 | 1 | 1 | 1 | 1 | 1 |
端子数量 | 8 | 8 | 8 | 8 | 8 |
字数 | 512 words | 512 words | 512 words | 512 words | 512 words |
字数代码 | 512 | 512 | 512 | 512 | 512 |
工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
最高工作温度 | 70 °C | 125 °C | 85 °C | 85 °C | 125 °C |
最低工作温度 | -25 °C | -40 °C | -40 °C | -40 °C | -40 °C |
组织 | 512X8 | 512X8 | 512X8 | 512X8 | 512X8 |
输出特性 | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN | OPEN-DRAIN |
封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装代码 | DIP | SOP | DIP | SOP | DIP |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | IN-LINE | SMALL OUTLINE | IN-LINE | SMALL OUTLINE | IN-LINE |
并行/串行 | SERIAL | SERIAL | SERIAL | SERIAL | SERIAL |
认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
座面最大高度 | 4.2 mm | 1.75 mm | 4.2 mm | 1.75 mm | 4.2 mm |
串行总线类型 | I2C | I2C | I2C | I2C | I2C |
最大供电电压 (Vsup) | 6 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
最小供电电压 (Vsup) | 3 V | 4.5 V | 4.5 V | 4.5 V | 4.5 V |
标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V |
表面贴装 | NO | YES | NO | YES | NO |
技术 | CMOS | CMOS | CMOS | CMOS | CMOS |
温度等级 | OTHER | AUTOMOTIVE | INDUSTRIAL | INDUSTRIAL | AUTOMOTIVE |
端子形式 | THROUGH-HOLE | GULL WING | THROUGH-HOLE | GULL WING | THROUGH-HOLE |
端子节距 | 2.54 mm | 1.27 mm | 2.54 mm | 1.27 mm | 2.54 mm |
端子位置 | DUAL | DUAL | DUAL | DUAL | DUAL |
宽度 | 7.62 mm | 3.9 mm | 7.62 mm | 3.9 mm | 7.62 mm |
最长写入周期时间 (tWC) | 10 ms | 10 ms | 10 ms | 10 ms | 10 ms |
Base Number Matches | - | 1 | 1 | 1 | - |
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