SKiiP 202 GD 061 - 357 CTV
Absolute Maximum Ratings
Symbol
V
isol 4)
T
op
,T
stg
Conditions
AC, 1min
Operating / stor. temperature
1)
Values
2500
-25...+85
600
400
200
-40...+150
200
400
2000
20
18
30
20
75
Units
V
°C
V
V
A
°C
A
A
A
kAs
2
V
V
kHz
kV/µs
IGBT and Inverse Diode
V
CES
V
CC 5)
Operating DC link voltage
I
C
IGBT
3)
T
j
IGBT + Diode
I
F
Diode
I
FM
Diode, t
p
< 1 ms
I
FSM
Diode, T
j
= 150 °C, 10ms; sin
2
I t (Diode) Diode, T
j
= 150 °C, 10ms
Driver
V
S1
Stabilized Power Supply
V
S2
Non-stabilized Power Supply
f
smax
Switching frequency
dV/dt
Primary to secondary side
SKiiPPACK
®
SK integrated intelligent
Power PACK
3-phase bridge
SKiiP
7,9)
202 GD 061 - 357 CTV
Preliminary Data
Case S3
Characteristics
Symbol
IGBT
11)
V
(BR)CES
I
CES
V
TO
r
T
V
Cesat
V
Cesat
E
on
+ E
off
C
CHC
L
CE
Conditions
1)
min.
≥V
CES
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
typ.
−
−
3
−
−
−
−
−
0,8
15
−
−
−
−
−
−
−
−
max.
−
0,4
−
0,94
9,6
2,9
2,65
18/25
−
−
1,72
1,75
6
0,78
5,0
0,225
0,375
36
Units
V
mA
mA
V
mΩ
V
V
mJ
nF
nH
V
V
mJ
V
mΩ
K/W
K/W
K/KW
mA
mA
µs
A
A
°C
V
Driver without supply
V
GE
= 0,
T
j
= 25 °C
V
CE
= V
CES
T
j
= 125 °C
T
j
= 125 °C
T
j
= 125 °C
I
C
= 200A,
T
j
= 125 °C
I
C
= 200A,
T
j
= 25 °C
V
CC
=300/400V,I
C
=200A
T
j
= 125 °C
per Phase, AC side
Top, Bottom
T
j
= 125 °C
T
j
= 25 °C
T
j
= 125 °C
Inverse Diode
2)
V
F
= V
EC
I
F
= 200A;
V
F
= V
EC
I
F
= 200A
E
on
+ E
off
I
F
= 200A;
V
TO
T
j
= 125 °C
r
T
T
j
= 125 °C
Features
•
Short circuit protection, due to
evaluation of current sensor
signals
•
Isolated power supply
•
Low thermal impedance
•
Optimal thermal management
with integrated heatsink
•
Pressure contact technology
with increased power cycling
capability, compact design
•
Low stray inductance
•
High power, small losses
•
Over-temperature protection
1)
2)
3)
4)
Thermal Characteristics
R
thjs10)
per IGBT
10)
R
thjs
per Diode
6,10)
R
thsa
P16 heatsink; see case S3
Driver
I
S1
Supply current 15V-supply
I
S2
Supply current 24V-supply
t
interlock-driver
Interlock-time
SKiiPPACK protection
I
TRIPSC
Short circuit protection
I
TRIPLG
Ground fault protection
T
TRIP
Over-temp. protection
9)
U
DCTRIP
U
DC
-protection
Mechanical Data
M1
DC terminals, SI Units
M2
AC terminals, SI Units
B 7
−
14
5)
6)
7)
340+240*f
s
/f
smax
+3,5*I
AC
/A
250+170*f
s
/f
smax
+2,6*I
AC
/A
2,3
250
58
115
410
4
8
−
−
0898
6
10
9)
10)
11)
T
heatsink
= 25 °C, unless
otherwise specified
CAL = Controlled Axial Lifetime
Technology (soft and fast)
without driver
Driver input to DC link /
AC output to DC link / AC
output to heatsink
with Semikron-DC link (low
inductance)
other heatsinks on request
C - Integrated current sensors
T - Temperature protection
V - 15 V or 24 V power supply
options available for driver:
U - DC link voltage sense
F – Fiber optic connector
“
s
” referenced to temperature
sensor
NPT-technology with homo-
genous current-distribution
Nm
Nm
©by
SEMIKRON
PIN-array - 3-phase bridge driver SKiiPPACK type „GD and GDL”
X1:
Pin
1
2
3
signal
shield
BOT HB 1
IN
4)
1)
remark
connected to GND, when shielded cable is used
positive 15V CMOS logic; 10 kΩ impedance
short circuit monitoring HB1
LOW = NO ERROR; open collector output;
max. 30 V / 15 mA
propagation delay 1
µs,
min. pulsewidth error-memory-reset 8
µs
positive 15V CMOS logic; 10 kΩ impedance
positive 15V CMOS logic; 10 kΩ impedance
1)
X10: halfbridge 1 (HB1) OUT
Pin Signal
1
2
8
11
12
13
16
17
Collector 1=TOP (HB1)
Gate 1=TOP (HB1)
Emitter 1=TOP (HB1)
Collector 2=BOT (HB1)
Gate 2=BOT (HB1)
Emitter 2=BOT (HB1)
ERROR HB 1 OUT
4
5
6
TOP HB 1
IN
4)
4)
BOT HB 2 IN
ERROR HB 2 OUT
short circuit monitoring HB2
LOW = NO ERROR; open collector output;
max. 30 V / 15 mA
propagation delay 1
µs,
min. pulsewidth error-memory-reset 8
µs
positive 15V CMOS logic; 10 kΩ impedance
positive 15V CMOS logic; 10 kΩ impedance
7
8
9
TOP HB 2 IN
4)
BOT HB 3 IN
4)
X11: halfbridge 2 (HB2) OUT
Pin Signal
1
2
8
11
12
13
16
Temp.-Sensor (HB2)1
Temp.-Sensor (HB2)2
Collector 1=TOP (HB2)
Gate 1=TOP (HB2)
Emitter 1=TOP (HB2)
Collector 2=BOT (HB2)
Gate 2=BOT (HB2)
Emitter 2=BOT (HB2)
ERROR HB 3 OUT
1)
short circuit monitoring HB 3
LOW = NO ERROR; open collector output;
max. 30 V / 15 mA
propagation delay 1
µs,
min. pulsewidth error-memory-reset 8
µs
TOP HB 3
4)
Overtemp. OUT
1)
positive 15V CMOS logic; 10 kΩ impedance
LOW = NO ERROR =
ϑ
DCB
< 115 + 5°C
open collector Output; max. 30 V / 15 mA
„low“ output voltage < 0,6 V
„high“ output voltage max. 30 V
U
DC
when using
option „U”
actual DC-link voltage, 9,0 V refer to U
DCmax
max. output current 5 mA
24 V
DC
(20 - 30 V)
don´t supply with 24 V, when using + 15 V
DC
supply voltage monitoring threshold 15,6 V
15 V
DC
+ 4 % power supply
don´t supply with 15 V, when using + 24 V
DCIN
supply voltage monitoring threshold 13 V
GND for power supply and
GND for digital signals
10
11
12
13
reserved
U
DC
analog OUT
17
14
15
16
17
18
19
20
21
22
+ 24 V
DC
IN
+ 24 V
DC
IN
+ 15 V
DC
IN
+ 15 V
DC
IN
GND
GND
Temp. analog OUT
GND aux
2)
I analog OUT HB 1
X12: halfbridge 3 (HB3) OUT
Pin Signal
1
2
8
11
12
13
Collector 1=TOP (HB3)
Gate 1=TOP (HB3)
Emitter 1=TOP (HB3)
Collector 2=BOT (HB3)
Gate 2=BOT (HB3)
Emitter 2=BOT (HB3)
current actual value, 8,0 V refer to 100 % I
C
overcurrent trip level 10 V
⇔
125 %; I
C
@ 25 °C
current value > 0
⇔
SKiiP is source
current value < 0
⇔
SKiiP is sink
current actual value, 8,0 V refer to 100 % I
C
overcurrent trip level 10 V
⇔
125 %; I
C
@ 25 °C
current value > 0
⇔
SKiiP is source
current value < 0
⇔
SKiiP is sink
current actual value, 8,0 V refer to 100 % I
C
overcurrent trip level 10 V
⇔
125 %; I
C
@ 25 °C
current value > 0
⇔
SKiiP is source
current value < 0
⇔
SKiiP is sink
16
17
23
24
GND aux
2)
I analog OUT HB 2
1)
25
26
GND aux
2)
I analog OUT HB 3
Open collector output, external pull
up resistor necessary
2)
GND aux = reference for analog
output signals
4)
„high“ (min) 11,2 V
„low“ (max) 5,4 V
B7–8
0898
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