BLP15M7160P
Power LDMOS transistor
Rev. 3 — 9 February 2015
Product data sheet
1. Product profile
1.1 General description
A 160W LDMOS RF power transistor for broadcast transmitter and industrial
applications. The transistor is suitable for the frequency range HF to 1500 MHz. The
excellent ruggedness and broadband performance of this device makes it ideal for digital
applications.
Table 1.
Typical performance
RF performance at T
h
= 25
C in a common source test circuit.
Test signal
pulsed, class-B
f
(MHz)
860
V
DS
(V)
28
I
Dq
(mA)
100
P
L(AV)
(W)
-
P
L(M)
(W)
160
G
p
(dB)
20
D
(%)
62
1.2 Features and benefits
Integrated ESD protection
Excellent ruggedness
High power gain
High efficiency
Excellent reliability
Easy power control
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
Communication transmitter applications in the HF to 1500 MHz frequency range
Industrial applications in the HF to 1500 MHz frequency range
Single product Doherty applications
NXP Semiconductors
BLP15M7160P
Power LDMOS transistor
2. Pinning information
Table 2.
Pinning
All pins must be connected for correct operation and to prevent damage to the device.
Pin
1
2
3
4
5
Description
gate 1
gate 2
drain 2
drain 1
source
[1]
Simplified outline
Graphic symbol
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLP15M7160P
Description
Version
SOT1223-1
HSOP4F plastic, heatsink small outline package; 4 leads (flat)
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
[1]
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
6
65
[1]
Max
65
+11
+150
225
Unit
V
V
C
C
-
Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF
calculator.
5. Thermal characteristics
Table 5.
Symbol
Thermal characteristics
Parameter
Conditions
T
case
= 80
C;
P
L
= 160 W
[1]
Typ
0.5
Unit
K/W
R
th(j-case)
thermal resistance from junction to case
[1]
R
th(j-case)
is measured under RF conditions.
BLP15M7160P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 9 February 2015
2 of 11
NXP Semiconductors
BLP15M7160P
Power LDMOS transistor
6. Characteristics
Table 6.
DC characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 90 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 3.15 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 3.15 A
Min
65
1.5
1.4
15
-
-
-
Typ
-
1.86
-
16
-
6
0.2
Max
-
2.3
+1.4
-
140
-
-
Unit
V
V
A
A
nA
S
Table 7.
AC characteristics
T
j
= 25
C per section; unless otherwise specified.
Symbol
C
iss
C
oss
C
rs
Parameter
input capacitance
output capacitance
feedback capacitance
Conditions
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz
Min Typ Max Unit
-
-
-
79
32
1.5
-
-
-
pF
pF
pF
Table 8.
RF characteristics
Test signal: pulsed CW; f = 860 MHz; RF performance measured at V
DS
= 28 V; I
Dq
= 100 mA;
T
case
= 25
C; unless otherwise specified; in a class-B production test circuit.
Symbol
G
p
D
Parameter
power gain
drain efficiency
Conditions
P
L(M)
= 160 W
P
L(M)
= 160 W
Min
16.5
57.5
Typ
19.4
59.7
Max
-
-
Unit
dB
%
7. Test information
7.1 Ruggedness in class-AB operation
The BLP15M7160P is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
f = 860 MHz at rated load power.
BLP15M7160P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 9 February 2015
3 of 11
NXP Semiconductors
BLP15M7160P
Power LDMOS transistor
7.2 Demo circuit information
Printed-Circuit Board (PCB): Taconic RF35;
r
= 3.5; thickness = 0.76 mm;
thickness copper plating = 35
m.
See
Table 9
for a list of components.
Fig 1.
Component layout for class-AB production test circuit
Table 9.
List of components
For test circuit see
Figure 1.
Component
C1, C2
C4, C5
C9
C10, C11
C12, C13
C14, C15
C16, C17
C18, C19
C20, C21
C22, C23
C30
C31
C32
C36, C37
T1
T2
R1, R2
R3, R4
R5, R6
R7, R8
BLP15M7160P
Description
Value
Remarks
ATC800B
ATC800B
ATC180R
ATC800B
ATC180R
TDK
ATC800B
TDK
ATC800B
ATC800A
ATC800A
ATC800A
ATC800A
Micro-Coax UT-090C-25
Micro-Coax UT-090C-25
Vishay MRS25
SMD 1206
Vishay MRS25
Bourns
© NXP Semiconductors N.V. 2015. All rights reserved.
multilayer ceramic chip capacitor 5.6 pF
multilayer ceramic chip capacitor 4.7 pF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 4.7
F,
50 V
multilayer ceramic chip capacitor 100 pF
multilayer ceramic chip capacitor 10
F
electrolytic capacitor
470
F,
63 V
multilayer ceramic chip capacitor 1 nF
multilayer ceramic chip capacitor 33 pF
multilayer ceramic chip capacitor 10 pF
multilayer ceramic chip capacitor 11 pF
electrolytic capacitor
semi rigid coax
semi rigid coax
resistor
resistor
resistor
potentiometer
Rev. 3 — 9 February 2015
C33, C34, C35 multilayer ceramic chip capacitor 91 pF
4.7
F,
50 V
25
25
10
5.6
100
10 k
All information provided in this document is subject to legal disclaimers.
Product data sheet
4 of 11
NXP Semiconductors
BLP15M7160P
Power LDMOS transistor
7.3 Graphical data
7.3.1 1-Tone pulsed
V
DS
= 28 V; I
Dq
= 200 mA; f = 860 MHz.
Fig 2.
Power gain and drain efficiency as function of output power; typical values
V
DS
= 28 V; f = 860 MHz.
(1) I
Dq
= 50 mA
(2) I
Dq
= 100 mA
(3) I
Dq
= 200 mA
(4) I
Dq
= 400 mA
(5) I
Dq
= 600 mA
(6) I
Dq
= 800 mA
V
DS
= 28 V; f = 860 MHz.
(1) I
Dq
= 50 mA
(2) I
Dq
= 100 mA
(3) I
Dq
= 200 mA
(4) I
Dq
= 400 mA
(5) I
Dq
= 600 mA
(6) I
Dq
= 800 mA
Fig 3.
Power gain as a function of output power;
typical values
Fig 4.
Drain efficiency as a function of output power;
typical values
BLP15M7160P
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 3 — 9 February 2015
5 of 11
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